SIR838DP-T1-GE3 [VISHAY]
N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel;
| 型号： | SIR838DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiR838DP
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Material categorization:
PRODUCT SUMMARY
•
•
•
VDS (V)
RDS(on) ()
ID (A)
Qg (Typ.)
0.033 at VGS = 10 V
150
35
33 nC
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® SO-8
APPLICATIONS
D
• Primary Side Switch
S
6.15 mm
5.15 mm
1
S
•
Isolated DC/DC Converters
2
S
3
G
4
D
G
8
D
7
D
6
D
5
S
Bottom View
N-Channel MOSFET
Ordering Information:
SiR838DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
150
20
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
35
28
8.3b, c
6.6b, c
60
60a
4.5b, c
30
ID
Continuous Drain Current (TJ = 150 °C)
A
IDM
IS
Pulsed Drain Current
T
C = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
mJ
W
45
T
T
C = 25 °C
C = 70 °C
96
62
5.4b, c
3.5b, c
PD
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
-55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
RthJA
RthJC
t 10 s
Steady State
18
1
23
°C/W
1.3
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 65650
S13-2092-Rev. B, 30-Sep-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR838DP
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
150
V
V
DS Temperature Coefficient
175
-9
mV/°C
VGS(th) Temperature Coefficient
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
2
4
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 150 V, VGS = 0 V
DS = 150 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
IDSS
Zero Gate Voltage Drain Current
µA
V
10
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
30
A
S
ID(on)
RDS(on)
gfs
VGS 10 V, ID = 8.3 A
0.0275
28
0.0330
VDS = 15 V, ID = 8.3 A
Ciss
Coss
Crss
Qg
Input Capacitance
2075
155
45
V
DS = 75 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
33
50
Qgs
Qgd
Rg
Gate-Source Charge
VDS = 75 V, VGS = 10 V, ID = 8.3 A
f = 1 MHz
14
nC
Gate-Drain Charge
4
Gate Resistance
0.3
1.4
16
2.8
25
17
35
15
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
V
DD = 75 V, RL = 11.5
ns
ID 6.6 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
23
Fall Time
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
60
60
A
IS = 6.6 A, VGS 0 V
0.8
77
1.2
116
390
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
260
60
IF = 6.6 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
17
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 65650
S13-2092-Rev. B, 30-Sep-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR838DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
45
30
15
0
1.5
1.2
0.9
0.6
0.3
0.0
V
GS
= 10 V thru 7 V
V
GS
= 6 V
T
= 25 °C
C
V
GS
= 5 V
T
C
= 125 °C
3.0
T
= - 55 °C
C
0
0
0
1
2
3
4
5
0.0
1.5
4.5
6.0
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
0.040
0.035
0.030
0.025
0.020
2500
2000
1500
1000
500
C
iss
V
GS
= 10 V
C
oss
C
rss
0
15
30
- Drain Current (A)
45
60
0
30
60
90
120
150
I
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
10
8
2.5
2.1
1.7
1.3
0.9
0.5
I
= 8.3 A
I
= 8.3 A
D
D
V
DS
= 75 V
V
GS
= 10 V
V
DS
= 38 V
6
V
DS
= 120 V
4
2
0
7
14
21
28
35
- 50 - 25
0
T
25
50
75
100 125 150
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65650
S13-2092-Rev. B, 30-Sep-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR838DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.10
0.08
0.06
0.04
0.02
0.00
T
J
= 150 °C
T
= 125 °C
= 25 °C
J
T
J
= 25 °C
T
J
0.1
0.0
0.3
0.6
0.9
1.2
4.0
5.5
7.0
8.5
10.0
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
4.0
3.5
3.0
2.5
2.0
1.5
150
120
90
60
30
0
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
100
Limited by R
Single Pulse Power, Junction-to-Ambient
*
DS(on)
100 µs
10
1 ms
10 ms
1
100 ms
0.1
1 s
T
= 25 °C
A
10 s
Single Pulse
BVDSS Limited
DC
0.01
0.1
1
10
1000
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 65650
S13-2092-Rev. B, 30-Sep-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR838DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
120
90
60
30
0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65650
S13-2092-Rev. B, 30-Sep-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
5
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiR838DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65650.
www.vishay.com
6
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 65650
S13-2092-Rev. B, 30-Sep-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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