SIS439DNT [VISHAY]
P-Channel 30 V (D-S) MOSFET;
| 型号： | SIS439DNT |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30 V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiS439DNT
Vishay Siliconix
www.vishay.com
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package
with Small Size and Low 0.75 mm Profile
• 100 % Rg and UIS Tested
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)f
- 50e
Qg (Typ.)
0.0110 at VGS = - 10 V
0.0195 at VGS= - 4.5 V
- 30
23 nC
- 43.5
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Thin PowerPAK 1212-8
S
3.30 mm
3.30 mm
APPLICATIONS
1
S
S
2
S
• Load Switch
• Adaptor Switch
3
G
4
D
• Notebook PC
G
8
D
7
0.75 mm
D
6
D
5
Bottom View
Ordering Information:
SiS439DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
- 30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
T
C = 25 °C
- 50e
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 43.5
- 14.7a, b
- 11.7a, b
- 90
Continuous Drain Current (TJ = 150 °C)
ID
A
Pulsed Drain Current (t = 100 μs)
IDM
IS
TC = 25 °C
TA = 25 °C
- 43.4
- 3.2a, b
- 25
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IAS
L = 0.1 mH
EAS
31.25
52.1
mJ
W
T
T
C = 25 °C
C = 70 °C
3.3
Maximum Power Dissipation
PD
TA = 25 °C
TA = 70 °C
3.8a, b
2.4a, b
- 50 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
°C
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on TC = 25 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t 10 s
RthJA
26
33
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.9
2.4
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
S13-1667-Rev. A, 29-Jul-13
Document Number: 62869
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS439DNT
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS= 0 V, ID = - 250 μA
ID = - 250 μA
- 30
V
VDS Temperature Coefficient
VDS/TJ
VGS(th)/TJ
- 22
5
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th
IGSS
)
VDS = VGS, ID = - 250 μA
- 1.2
- 20
- 2.8
100
- 1
V
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 5 V,VGS = - 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
μA
A
- 10
ID(on)
VGS = - 10 V, ID = - 14 A
0.0091
0.0156
37
0.0110
0.0195
Drain-Source On-State Resistancea
RDS(on)
gfs
S
VGS = - 4.5 V, ID = - 11 A
VDS = - 15 V, ID = - 14 A
Forward Transconductancea
Dynamic
Input Capacitance
Ciss
Coss
Crss
2135
395
335
45
Output Capacitance
Reverse Transfer Capacitance
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = - 15 V, VGS = - 10 V, ID = - 14.4 A
68
35
Total Gate Charge
Qg
23
nC
Gate-Source Charge
Qgs
Qgd
Rg
VDS = - 15 V, VGS = - 4.5 V, ID = - 14.4 A
f = 1 MHz
7.2
10.4
1.8
38
Gate-Drain Charge
Gate Resistance
0.4
3.6
60
50
41
20
21
10
54
12
Turn-On Delay Time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Rise Time
33
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 4.5 V, Rg = 1
Turn-Off DelayTime
27
Fall Time
12
ns
Turn-On Delay Time
14
Rise Time
5
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 10 V, Rg = 1
Turn-Off DelayTime
36
Fall Time
6
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IF = - 10 A
- 50
- 90
- 1.2
35
A
- 0.8
22
15
13
9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
25
IF = - 10 A, dI/dt = 100 A/μs, TJ = 25 °C
ns
tb
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1667-Rev. A, 29-Jul-13
Document Number: 62869
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS439DNT
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
2
1.5
1
VGS
10 V thru 5 V
=
VGS = 4.5 V
VGS = 4 V
45
30
15
0
TC = 25 °C
0.5
0
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0.7
1.4
2.1
2.8
3.5
0
0.5
1
1.5
2
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3300
2640
1980
1320
660
0.025
0.02
0.015
0.01
0.005
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
0
15
30
45
60
0
6
12
18
24
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
VDS = 8 V
ID = 14.7 A
ID = 14 A
VGS = 10 V
8
6
4
2
0
1.4
1.2
1
VDS = 15 V
VGS = 4.5 V
VDS = 24 V
0.8
0.6
- 50 - 25
0
25
50
75
100 125 150
TJ - Junction Temperature (°C)
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62869
S13-1667-Rev. A, 29-Jul-13
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS439DNT
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.040
0.030
0.020
0.010
0.000
100
ID = 14 A
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
1
0.1
0.0
0.3
0.6
0.9
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
2.2
ID = 250 μA
1.98
1.76
1.54
1.32
1.1
40
30
20
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1.0
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
10
Limited by RDS(on)
*
100 μs
1 ms
10 ms
1
100 ms
10 s, 1 s
DC
0.1
0.01
0.001
TA = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe OperArea, Junction-to-Ambient
S13-1667-Rev. A, 29-Jul-13
Document Number: 62869
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS439DNT
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
45
Package Limited
30
15
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
2.0
64
48
32
16
0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
S13-1667-Rev. A, 29-Jul-13
Document Number: 62869
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS439DNT
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 50 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62869.
S13-1667-Rev. A, 29-Jul-13
Document Number: 62869
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8T
MILLIMETERS
NOM.
INCHES
DIM.
A
MIN.
0.70
0.00
0.23
0.23
3.20
2.95
1.98
0.48
MAX.
0.80
0.05
0.41
0.33
3.40
3.15
2.24
0.89
MIN.
0.028
0.000
0.009
0.009
0.126
0.116
0.078
0.019
NOM.
0.030
MAX.
0.031
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.75
-
A1
b
-
0.30
0.012
c
0.28
0.011
D
3.30
0.130
D1
D2
D3
D4
D5
E
3.05
0.120
2.11
0.083
-
-
0.47 TYP.
2.3 TYP.
3.30
0.0185 TYP.
0.090 TYP.
0.130
3.20
2.95
1.47
1.75
3.40
3.15
1.73
1.98
0.126
0.116
0.058
0.069
0.134
0.124
0.068
0.078
E1
E2
E3
E4
e
3.05
0.120
1.60
0.063
1.85
0.073
0.34 TYP.
0.65 BSC
0.86 TYP.
-
0.013 TYP.
0.026 BSC
0.034 TYP.
-
K
K1
H
0.35
0.30
0.30
0.06
0°
-
0.014
0.012
0.012
0.002
0°
-
0.41
0.51
0.56
0.20
12°
0.016
0.020
0.022
0.008
12°
L
0.43
0.017
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 TYP.
0.005 TYP.
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
Revison: 18-Feb-13
Document Number: 62836
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 13-Jun-16
Document Number: 91000
1
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