SM15T33A/9AT-E3 [VISHAY]
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMC, 2 PIN, Transient Suppressor;
| 型号： | SM15T33A/9AT-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMC, 2 PIN, Transient Suppressor 电视 |
| 文件： | 总3页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
Breakdown Voltage 6.8 to 220V
Peak Pulse Power 1500W
DO-214AB (SMC J-Bend)
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.280 (7.11)
0.260 (6.60)
0.121 MIN.
(3.07 MIN.)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.103 (2.62)
0.079 (2.06)
Dimensions in inches
and (millimeters)
0.320 REF
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.320 (8.13)
0.305 (7.75)
Features
Mechanical Data
• Low profile package with built-in strain relief for
surface mounted applications
Case: JEDEC DO-214AB (SMC) molded plastic over
passivated junction
• Glass passivated junction
• Low inductance
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
• Excellent clamping capability
• 1500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
Standard Packaging: 12mm tape (EIA STD RS-481)
• Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V(BR) for
undirectional and 5ns for bidirectional types
Weight: 0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
• High temperature soldering: 250°C/10 seconds at terminals
57 – 850 per 7" plastic Reel (16mm tape), 8.5K/carton
9A – 3.5K per 13" plastic Reel (16mm tape), 35K/carton
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SM15T10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
PPPM
Minimum 1500
W
a 10/1000µs waveform(1)(2) (Fig. 1)
Peak pulse current with a 10/1000µs waveform(1) (Fig. 3)
IPPM
See Next Table
6.5
A
Power dissipation on infinite heatsink, TA = 50°C
PM(AV)
W
Peak forward surge current 10ms single half sine-wave
IFSM
200
A
uni-directional only(2)
Typical thermal resistance junction to ambient air(3)
Typical thermal resistance junction to leads
RθJA
RθJL
75
15
°C/W
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
–65 to +150
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88380
08-Oct-02
www.vishay.com
1
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TA=25ºC unless otherwise noted)
Standoff Leakage
Test
Clamping Voltage
V @ I
Clamping Voltage
V @ I
Device Marking
Code
Voltage Current(3) Breakdown Voltage Current
αT
Max
C
PP
C
PP
(2)
V
RM
I
RM
@V
µA
V
BR
@ I
(V)
I
T
(mA)
(10/1000µs)
(8/20µs)
RM
T
Type(1)
Uni
Bi
(V)
Min
Max
(V)
(A)
(V)
(A)
10-4/°C
(
)
SM15T6V8A
GDE7
GDE7
5.80
1000
500
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
6.45
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
10
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
143
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
746
5.7
SM15T7V5A
SM15T10A
SM15T12A
SM15T15A
SM15T18A
SM15T22A
SM15T24A
SM15T27A
SM15T30A
SM15T33A
SM15T36A
SM15T39A
SM15T68A
SM15T100A
SM15T150A
SM15T200A
SM15T220A
Notes:
GDK7
GDT7
GDX7
GEG7
GEM7
GET7
GEV7
GEX7
GFE7
GFG7
GFK7
GFM7
GGG7
GGV7
GHK7
GHR7
GHR8
BDK7
BDT7
BDX7
GEG7
BEM7
BET7
GEV7
BEX7
BFE7
GFG7
BFK7
BFM7
GGG7
GGV7
GHK7
GHR7
GHR8
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
10
132
103
690
538
461
368
308
254
234
207
187
169
156
143
83
6.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.3
90.0
71.0
59.5
49.0
45.0
40.0
36.0
33.0
30.0
28.0
16.3
11.0
7.20
5.50
4.60
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
178
56
158
207
265
38
171
190
210
274
353
28
188
209
231
328
388
26
(1) For bi-directional devices add suffix “CA” instead of “A”
(2) VBR measured after IT applied for 300µs square wave pulse
(3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled
Application Notes
A 1500W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also
used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough
to limit the current within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit.
www.vishay.com
2
Document Number 88380
08-Oct-02
SM15T Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Pulse Derating Curve
Fig. 1 – Peak Pulse Power Rating Curve
100
100
75
50
10
1
25
0
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
0.1
25
50
75
150
175
200
0
100
125
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td — Pulse Width (sec.)
TA — Ambient Temperature (°C)
Fig. 4 – Typical Junction Capacitance
Fig. 3 – Pulse Waveform
Uni-Directional
20,000
10,000
150
100
50
Measured at
Zero Bias
TJ = 25°C
Pulse Width (td)
tr = 10µsec.
is defined as the point
Peak Value
IPPM
where the peak current
decays to 50% of IPPM
1,000
100
10
Half Value — IPP
VR, Measured at
Stand-Off
Voltage, VWM
IPPM
2
10/1000µsec. Waveform
as defined by R.E.A.
Uni-Directional
Bi-Directional
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
td
0
1.0
3.0
4.0
0
2.0
1
10
100
400
VWM — Reverse Stand-Off Voltage (V)
t — Time (ms)
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
Fig. 5 – Typical Transient Thermal
Impedance
100
200
100
10
1.0
0.1
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = TJ max.
10
0.001
0.01
0.1
1
10
100
1000
1
10
100
Number of Cycles at 60Hz
tp — Pulse Duration (sec)
Document Number 88380
08-Oct-02
www.vishay.com
3
相关型号：
SM15T33A/9T
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMC, 2 PIN
VISHAY
SM15T33C/9
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMC, 2 PIN
VISHAY
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