SM5S12HE3_A/I [VISHAY]
Trans Voltage Suppressor Diode, 3600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB,;型号: | SM5S12HE3_A/I |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 3600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, 局域网 光电二极管 |
文件: | 总5页 (文件大小:99K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM5S10 thru SM5S36A
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
10 V to 36 V
11.1 V to 44.2 V
3600 W
VBR
TYPICAL APPLICATIONS
P
PPM (10 x 1000 μs)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
P
PPM (10 x 10 000 μs)
2800 W
PD
5 W
IFSM
500 A
TJ max.
Polarity
Package
175 °C
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with 5 % tolerance)
Uni-directional
DO-218AB
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: heatsink is anode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
3600
UNIT
with 10/1000 μs waveform
Peak pulse power dissipation
W
with 10/10 000 μs waveform
2800
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
PD
5.0
W
A
(1)
IPPM
See next table
500
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
IFSM
A
TJ, TSTG
-55 to +175
°C
Note
(1)
Non-repetitive current pulse at TA = 25 °C
Revision: 22-Jul-16
Document Number: 88382
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10 thru SM5S36A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM REVERSE
LEAKAGE
MAX. PEAK
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
PULSE CURRENT CLAMPING
DEVICE
TYPE
V
BR (V)
AT VWM
AT 10/1000 μs
WAVEFORM
(A)
VOLTAGE
AT IPPM
VC (V)
TJ = 175 °C
I
(mA)
(V)
MIN.
MAX.
ID (μA)
D (μA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
SM5S10
SM5S10A
SM5S11
SM5S11A
SM5S12
SM5S12A
SM5S13
SM5S13A
SM5S14
SM5S14A
SM5S15
SM5S15A
SM5S16
SM5S16A
SM5S17
SM5S17A
SM5S18
SM5S18A
SM5S20
SM5S20A
SM5S22
SM5S22A
SM5S24
SM5S24A
SM5S26
SM5S26A
SM5S28
SM5S28A
SM5S30
SM5S30A
SM5S33
SM5S33A
SM5S36
SM5S36A
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
191
212
179
198
164
181
151
167
140
155
134
148
125
138
118
130
112
123
101
111
91
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
101
84
93
77
86
72
79
67
74
61
68
56
62
Note
•
For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
1.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM5S10AHE3/2D (1)
2.505
2.505
2D
I
750
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM5S10AHE3_A/I (1)
Note
(1)
AEC-Q101 qualified
Revision: 22-Jul-16
Document Number: 88382
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10 thru SM5S36A
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
10 000
4.0
2.0
0
1000
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
50
150
Case Temperature (°C)
200
0
100
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
3000
100
10
2500
2000
1500
1000
RθJA
RθJC
1
0.1
500
0
0.01
50
75
Case Temperature (°C)
150
175
25
100
125
0.01
0.1
1
10
100
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
Fig. 5 - Typical Transient Thermal Impedance
(10 ms Exponential Waveform)
150
100
50
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
Half Value - IPP
IPPM
2
td
0
10
30
40
0
20
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 22-Jul-16
Document Number: 88382
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10 thru SM5S36A
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.366 (9.3)
0.343 (8.7)
0.382 (9.7)
Lead 1
0.606 (15.4)
0.583 (14.8)
0.197 (5.0)
0.185 (4.7)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Revision: 22-Jul-16
Document Number: 88382
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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