SMA6J8.0A-E3/61 [VISHAY]
TVS DIODE 8V 18.2V DO214AC;
| 型号： | SMA6J8.0A-E3/61 |
| 厂家： | 
VISHAY |
| 描述： | TVS DIODE 8V 18.2V DO214AC 电视 |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
®
Surface-Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Available in uni-directional polarity only
• Excellent clamping capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMA (DO-214AC)
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3
D
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
3D Models
PRIMARY CHARACTERISTICS
VBR
6.4 V to 34.4 V
MECHANICAL DATA
VWM
5.0 V to 28 V
600 W
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
P
PPM (10 x 1000 μs)
PPPM (8 x 20 μs)
PD at TA = 50 °C
IFSM
4000 W
4 W
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
50 A
TJ max.
Polarity
Package
150 °C
Polarity: Color band denotes cathode end
Uni-directional
SMA (DO-214AC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
600
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)
Peak pulse power dissipation with a 8/20 μs waveform
Peak pulse current with a 10/1000 μs waveform (1)(2)
PPPM
W
4000
IPPM
See next table
A
Peak pulse current with a 8/20 μs waveform
Power dissipation on infinite heatsink, TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
PD
IFSM
4.0
50
W
A
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 1 and derated above TA = 25 °C per fig. 2
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 20-Jul-2020
Document Number: 89115
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
I
INDEX OF SYMBOLS
IF
SYMBOL
VWM
VBR
VC
PARAMETER
Stand-off voltage
Breakdown voltage
VWM
VBR
VC
Clamping voltage
ID
Leakage current at VWM
Peak pulse current
VF
V
ID
IT
IPP
αT
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
VF
IPP
RD
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
(2)
(2)
MAXIMUM
REVERSE
LEAKAGE
VC AT IPP
10/1000 μs
MAX.
RD
VC AT IPP
RD
BREAKDOWN
STAND-OFF
VOLTAGE
VWM
VOLTAGE
αT (3)
DEVICE
MARKING
CODE
8/20 μs
(1)
DEVICE
TYPE
V
BR AT IT
ID AT VWM
MIN. MAX.
V
25 °C 85 °C
μA
MAX.
V
MAX.
10-4/°C
5.7
mA
10
10
10
1
V
V
A
Ω
A
Ω
SMA6J5.0A
SMA6J6.0A
SMA6J6.5A
SMA6J7.5A
SMA6J8.0A
SMA6J8.5A
SMA6J10A
SMA6J11A
SMA6J12A
SMA6J13A
SMA6J15A
SMA6J16A
SMA6J17A
SMA6J18A
SMA6J20A
SMA6J22A
SMA6J24A
SMA6J26A
SMA6J28A
6AE
6AG
6AK
6AP
6AR
6AT
6AX
6AZ
6BE
6BG
6BM
6BP
6BR
6BT
6BV
6BX
6BZ
6CE
6CG
6.4
6.7
7.2
7.07
7.41
7.96
150
600
100
50
375
1500
250
125
50
50
5
5.0
6.0
6.5
7.5
8.0
8.5
10
11
12
13
15
16
17
18
20
22
24
26
28
9.1
65.9
63.2
58.8
50.8
48.0
45.1
38.2
34.8
31.9
29.4
25.4
23.8
22.5
21.2
19.1
17.4
15.9
14.7
13.6
0.031 13.4
0.033 13.7
0.038 14.5
0.051 17.0
0.056 18.2
0.064 18.7
0.089 19.6
0.107 21.5
0.128 23.5
0.153 23.9
0.201 27.7
0.229 29.5
0.259 31.4
0.292 33.2
0.361 36.8
0.437 40.4
0.523 44.3
0.614 47.9
0.704 51.6
298 0.021
290 0.022
276 0.024
235 0.033
220 0.038
205 0.040
184 0.040
172 0.047
157 0.056
147 0.054
123 0.075
119 0.083
111 0.094
102 0.109
9.5
5.9
6.1
6.5
7.0
7.3
7.8
8.1
8.3
8.4
8.8
8.8
9.0
9.2
9.4
9.5
9.6
9.7
9.8
10.2
11.8
12.5
13.3
15.7
17.2
18.8
20.4
23.6
25.2
26.7
28.3
31.4
34.5
37.8
40.9
44.0
8.33 9.21
8.89 9.83
1
20
9.4
10.4
1
20
11.1 12.3
12.2 13.5
13.3 14.7
14.4 15.9
16.7 18.5
17.8 19.7
18.9 20.9
20.0 22.1
22.2 24.5
24.4 26.9
26.7 29.5
28.9 31.9
31.1 34.4
1
1
1
1
5
1
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
1
1
1
1
1
1
1
1
1
1
1
1
1
93
89
80
75
68
0.132
0.152
0.185
0.213
0.253
1
1
1
1
1
1
1
1
Notes
(1)
(2)
(3)
(4)
Pulse test: tp ≤ 50 ms
To calculate maximum clamping voltage at other surge currents, use the following formula: VCLmax. = RD x IPP + VBRmax.
To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)
VF = 3.5 V at IF = 25 A, pulse test: 300 µs pulse width
Revision: 20-Jul-2020
Document Number: 89115
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
120
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
°C/ W
Typical thermal resistance, junction to lead
RθJL
25
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMA6J5.0A-E3/61
SMA6J5.0A-E3/5A
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.064
0.064
61
5A
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
150
100
50
tr = 10 µs
tr = 8 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
10
Half Value - IPP
IPPM
2
1
td = 1000 µs
td = 20 µs
td
0.1
0.1
0
1
10
100
1000
10 000
0
1.0
2.0
t - Time (ms)
3.0
4.0
Pulse Width (µs) - ½ IPP Exponential Waveform
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
10 000
1000
100
100
75
50
25
0
Measured at Zero Bias
Measured at Stand-off
Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
10
100
0
25
50
75 100 125 150 175 200
Reverse Voltage (V)
TJ - Initial Temperature
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 20-Jul-2020
Document Number: 89115
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMA6J5.0A thru SMA6J28A
www.vishay.com
Vishay General Semiconductor
100
10
1000
SMA6J5.0A to SMA6J8.0A
TA = 150 °C
100
10
SMA6J8.5A to SMA6J28A
1
TA = 150 °C
0.1
1
SMA6J5.0A to SMA6J28A
TA = 25 °C
0.01
0.1
0.001
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0.01
0.1
1
10
100
1000
Forward Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 20-Jul-2020
Document Number: 89115
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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