SMAJ550-E3/51 [VISHAY]

Trans Voltage Suppressor Diode, 300W, 495V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, SMA, 2 PIN;
SMAJ550-E3/51
型号: SMAJ550-E3/51
厂家: VISHAY    VISHAY
描述:

Trans Voltage Suppressor Diode, 300W, 495V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, SMA, 2 PIN

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中文:  中文翻译
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SMAJ530 and SMAJ550  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
Steady State Power 1W  
Peak Pulse Power 300W  
Reverse Voltage 530,550V  
DO-214AC  
(SMA)  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
Mounting Pad Layout  
0.060 MIN  
(1.52 MIN)  
0.094 MAX  
(2.38 MAX)  
0.177 (4.50)  
0.157 (3.99)  
Dimensions in inches  
and (millimeters)  
0.012 (0.305)  
0.006 (0.152)  
0.050 MIN  
(1.27 MIN)  
0.090 (2.29)  
0.078 (1.98)  
0.220 REF  
(5.58)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
MAX.  
Mechanical Data  
Case: JEDEC DO-214AC molded plastic body over  
passivated chip  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: The band denotes the cathode, which is positive with  
respect to the anode under normal TVS operation  
0.208 (5.28)  
0.194 (4.93)  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Protects power IC controllers such as TOPSwitch®  
Glass passivated junction  
Mounting Position: Any Weight: 0.002 oz., 0.064 g  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Excellent clamping capability  
Available in unidirectional only  
Packaging Codes – Options (Antistatic):  
51 1K per Bulk box, 20K/carton  
61 1.8K per 7" plastic Reel (12mm tape), 36K/carton  
5A 7.5K per 13" plastic Reel (12mm tape), 75K/carton  
Maximum Ratings and Thermal Characteristics TA = 25OC unless otherwise noted.  
Parameter  
Symbol  
SMAJ530  
SMAJ550  
Unit  
Device marking code  
HD  
SB  
Steady state power dissipation(3)  
Peak pulse power dissipation(1)(2)(5) (Fig. 1)  
Stand-off voltage  
PM(AV)  
PPPM  
VWM  
1.0  
W
W
Minimum 300  
477  
495  
V
Typical thermal resistance junction-to-lead  
Typical thermal resistance junction-to-ambient  
Operating junction and storage temperature range  
RθJL  
27  
75  
°C/W  
°C/W  
°C  
RθJA  
TJ, TSTG  
55 to +150  
Electrical Characteristics TA = 25OC unless otherwise noted.  
Minimum breakdown voltage at 100µA  
V(BR)  
530  
550  
V
V
Max. clamping voltage at 400mA, 10/1000µs-waveform  
Maximum DC reverse leakage current at VWM  
Typical temperature coefficient of V(BR)  
Vc  
760  
1.0  
ID  
µA  
650  
mV°C  
Typical capacitance(4)  
at 0V  
at 200V  
90  
7.5  
CJ  
pF  
Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC per Fig. 2  
(2) Mounted on 5.0mm2 copper pads to each terminal  
(3) Lead temperature at 75OC = TL  
(4) Measured at 1MHZ  
(5) Peak pulse power waveform is 10/1000µs.  
Document Number 88391  
03-Mar-03  
www.vishay.com  
1
SMAJ530 and SMAJ550  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves(TA = 25°C unless otherwise noted)  
Fig. 2 Pulse Derating Curve  
Fig. 1 Peak Pulse Power Rating Curve  
100  
100  
Non-repetitive Pulse  
Waveform shown in Fig. 3  
TA = 25°C  
75  
50  
10  
1
25  
0
0.1  
25  
50  
75  
125  
150  
175  
0
100  
0.1µs  
1.0µs  
10µs  
100µs  
1.0ms  
10ms  
td Pulse Width (sec.)  
TA Ambient Temperature (°C)  
Fig. 3 Pulse Waveform  
150  
100  
50  
TJ = 25°C  
Pulse Width (td)  
tr = 10µsec.  
is defined as the point  
Peak Value  
IPPM  
where the peak current  
decays to 50% of IPPM  
Half Value IPP  
IPPM  
2
10/1000µsec. Waveform  
as defined by R.E.A.  
td  
0
1.0  
3.0  
4.0  
0
2.0  
t Time (ms)  
Application Notes  
Respect Thermal Resistance (PCB Layout) as the temperature coefficient also contributes to the clamping voltage.  
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature.  
Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.  
Clamping voltage is influenced by internal resistance design approximation is 7V per 100mA slope.  
Keep temperature of TVS lower than TOPSwitch as a recommendation.  
Maximum current is determined by the maximum TJ and can be higher than 300mA.  
Contact supplier for different clamping voltage / current arrangements.  
Minimum breakdown voltage can be customized for other applications. Contact supplier.  
TOPSwitch is a registered trademark of Power Integrations, Inc.  
www.vishay.com  
2
Document Number 88391  
03-Mar-03  

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