SMB10J9.0AHM3_A/I [VISHAY]
Trans Voltage Suppressor Diode,;型号: | SMB10J9.0AHM3_A/I |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 二极管 |
文件: | 总6页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
®
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
Available
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
SMB (DO-214AA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
VBR (uni-directional)
6.4 V to 49.1 V
V
BR (bi-directional)
VWM
6.4 V to 49.1 V
5.0 V to 40 V
1000 W
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
PPPM (uni-directional)
PPM (bi-directional)
P
800 W
IFSM (uni-directional only)
TJ max.
100 A
150 °C
Polarity
Uni-directional, bi-directional
SMB (DO-214AA)
Package
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
1000
UNIT
uni-directional
Peak pulse power dissipation with a 10/1000 μs waveform
(fig. 1)
(1)(2)
PPPM
W
bi-directional
800
(1)
Peak pulse current with a 10/1000 μs waveform
IPPM
See next table
100
A
A
(2)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
IFSM
TJ, TSTG
-55 to +150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 24-Jan-2019
Document Number: 88422
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
UNI-DIRECTIONAL
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
PEAK
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VOLTAGE
BR AT IT
(V)
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
DEVICE
MARKING
CODE
(1)
DEVICE
TYPE
V
PULSE SURGE
CURRENT
(2)
(mA)
(V)
IPPM
(A)
MIN.
MAX.
ID (μA)
VC (V)
SMB10J5.0A
SMB10J6.0A
SMB10J6.5A
SMB10J7.0A
SMB10J7.5A
SMB10J8.0A
SMB10J8.5A
SMB10J9.0A
SMB10J10A
SMB10J11A
SMB10J12A
SMB10J13A
SMB10J14A
SMB10J15A
SMB10J16A
SMB10J17A
SMB10J18A
SMB10J20A
SMB10J22A
SMB10J24A
SMB10J26A
SMB10J28A
SMB10J30A
SMB10J33A
SMB10J36A
SMB10J40A
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
1000
1000
500
200
100
50
108.7
9.2
97.1
89.3
83.3
77.5
73.5
69.4
64.9
58.8
54.9
50.3
46.5
43.1
41.0
38.5
36.2
34.2
30.9
28.2
25.7
23.8
22.0
20.7
18.8
17.2
15.5
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Notes
(1)
(2)
(3)
(4)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
VF = 3.5 V at IF = 50 A (uni-directional only)
Revision: 24-Jan-2019
Document Number: 88422
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
BI-DIRECTIONAL
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK PULSE
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
VOLTAGE
DEVICE
MARKING
CODE
DEVICE
TYPE
(1)
V
BR AT IT
(V)
SURGE CURRENT
(2)
IPPM
(A)
(mA)
(V)
I
D (μA)
2000
2000
1000
400
200
100
40
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
VC (V)
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
MAX.
7.25
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
SMB8J5.0CA
SMB8J6.0CA
SMB8J6.5CA
SMB8J7.0CA
SMB8J7.5CA
SMB8J8.0CA
SMB8J8.5CA
SMB8J9.0CA
SMB8J10CA
SMB8J11CA
SMB8J12CA
SMB8J13CA
SMB8J14CA
SMB8J15CA
SMB8J16CA
SMB8J17CA
SMB8J18CA
SMB8J20CA
SMB8J22CA
SMB8J24CA
SMB8J26CA
SMB8J28CA
SMB8J30CA
SMB8J33CA
SMB8J36CA
SMB8J40CA
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Notes
(1)
(2)
(3)
Pulse test: tp 50 ms
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1)
Typical thermal resistance, junction to lead
SYMBOL
RJA
RJL
VALUE
72
20
UNIT
°C/ W
Note
(1)
Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SMB10J5.0A-E3/52
0.106
0.106
0.106
0.106
52
5B
H
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SMB10J5.0A-M3/52
SMB10J5.0A-E3/5B
SMB10J5.0A-M3/5B
SMB10J5.0AHE3_A/H (1)
SMB10J5.0AHM3_A/H (1)
SMB10J5.0AHE3_A/I (1)
SMB10J5.0AHM3_A/I (1)
I
3200
Note
(1)
AEC-Q101 qualified
Revision: 24-Jan-2019
Document Number: 88422
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10 000
1000
100
Measured at
Zero Bias
10
SMB10J5.0 -
SMB10J40A
VR, Measured at
Stand-Off
Voltage VWM
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SMB8J5.0C -
SMB8J40CA
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Bi-Directional
0.1
0.1 µs
10
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
1
10
100 200
td - Pulse Width (s)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
100
75
100
50
10
25
1.0
0
0.01
0.1
1
10
100
1000
0
25
50
75
100 125
150 175
200
TJ - Initial Temperature (°C)
tp - Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
150
200
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
8.3 ms Single Half Sine-Wave
Uni-Directional Only
tr = 10 µs
Peak Value
IPPM
100
50
0
Half Value - IPP
IPPM
2
10/1000 µs Waveform
as defined by R.E.A.
td
10
1.0
3.0
4.0
1
0
2.0
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 24-Jan-2019
Document Number: 88422
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.060 (1.52)
0.030 (0.76)
0.008
(0.203)
Max.
0.220 REF.
0.220 (5.59)
0.205 (5.21)
Revision: 24-Jan-2019
Document Number: 88422
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号:
SMB10J9.0HE3/52
Trans Voltage Suppressor Diode, 1000W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
VISHAY
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