SMP11-E3/84A [VISHAY]
Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional,;型号: | SMP11-E3/84A |
厂家: | VISHAY |
描述: | Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional, 二极管 |
文件: | 总5页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMP3V3 thru SMP36A
Vishay General Semiconductor
www.vishay.com
®
Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
eSMP® Series
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Available in uni-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
DO-220AA (SMP)
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRIMARY CHARACTERISTICS
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VBR uni-directional
4.10 V to 44.2 V
VWM
3.3 V to 36 V
400 W
PPPM
MECHANICAL DATA
IFSM
40 A
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
Polarity
Package
150 °C
Uni-directional
DO-220AA (SMP)
Base P/N-M3
-
halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
TYPICAL APPLICATIONS
M3 suffix meets JESD 201 class 2 whisker test
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak pulse current with a 10/1000 μs waveform (1)
Peak forward surge current 10 ms single half sine-wave (2)
Maximum instantaneous forward voltage at 25 A (3)
PPPM
IPPM
IFSM
VF
400
W
A
A
V
See table next page
40
2.5
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
(3)
Revision: 10-Dec-13
Document Number: 88481
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMP3V3 thru SMP36A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM
PEAK PULSE
SURGE
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
TEST
CURRENT
IT
VOLTAGE
DEVICE
MARKING
CODE
STAND-OFF
VOLTAGE VWM
(V)
(1)
V
BR AT IT
(V)
DEVICE TYPE
CURRENT
(mA)
ID (μA) (3)
I
PPM (A) (2)
VC (V)
MIN.
4.10
6.40
6.67
7.22
7.78
8.33
8.89
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
MAX.
5.10
7.07
7.37
7.98
8.60
9.21
9.83
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
SMP3V3
SMP5.0A
SMP6.0A
SMP6.5A
SMP7.0A
SMP7.5A
SMP8.0A
SMP11A
SMP12A
SMP13A
SMP14A
SMP15A
SMP16A
SMP17A
SMP18A
SMP20A
SMP22A
SMP24A
SMP26A
SMP28A
SMP30A
SMP33A
SMP36A
AC
AE
AG
AK
AM
AN
AR
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
1.0
10
3.3
5.0
6.0
6.5
7.0
7.5
8.0
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
200
150
600
100
50
54.8
43.5
38.8
35.7
33.3
31.0
29.4
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
7.3
9.2
10
10.3
11.2
12.0
12.9
13.6
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
20
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
8.8
8.3
7.5
6.9
Notes
(1)
(2)
(3)
VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
Surge current waveform per fig. 3 and derate per fig. 2
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
50
UNIT
°C/W
°C/W
Typical thermal resistance, junction to lead (1)
Typical thermal resistance, junction to ambient (2)
RJL
RJA
250
Notes
(1)
Mounted on PCB with 5.0 mm x 5.0 mm copper pad areas attached to each terminal
Mounted on minimum recommended pad layout
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
SMP3V3-M3/84A
SMP3V3-M3/85A
SMP11A-M3/84A
SMP11A-M3/85A
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
0.024
84A
85A
84A
85A
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.024
10 000
0.024
3000
0.024
10 000
Revision: 10-Dec-13
Document Number: 88481
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMP3V3 thru SMP36A
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
10 000
1000
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
Measured at
Zero Bias
Measured at
Stand-Off
Voltage, VWM
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.1
0.1
10
1
10
100
1000
10 000
1
10
100
td - Pulse Width (µs)
VWM - Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
1000
100
10
100
75
50
25
0
1
0.1
0.001
0.01
0.1
1
10
100
1000
0
25
50
75 100 125 150 175 200
t - Pulse Duration (s)
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Derating Curve
Fig. 5 - Typical Transient Thermal Impedance
150
100
50
TJ = 25 °C
Pulse Width (td)
tr = 10 µs
is defined as the Point
Peak Value
where the Peak Current
IPPM
decays to 50 % of IPPM
IPP
2
Half Value -
IPPM
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 10-Dec-13
Document Number: 88481
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMP3V3 thru SMP36A
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
(2.54)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Revision: 10-Dec-13
Document Number: 88481
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
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