SQ1431EH-T1-GE3 [VISHAY]
SMALL SIGNAL, FET;
| 型号： | SQ1431EH-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL, FET |
| 文件： | 总9页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ1431EH
Vishay Siliconix
www.vishay.com
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
PRODUCT SUMMARY
VDS (V)
- 30
0.175
0.300
- 3
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
• 100 % Rg and UIS Tested
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
S
SOT-363
SC-70 (6-LEADS)
D
D
G
1
2
3
6
D
D
S
G
Marking Code
9E XX
5
4
Lot Traceability
and Date Code
Part # Code
D
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
SC-70
SQ1431EH-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
20
TC = 25 °C
- 3
Continuous Drain Current
ID
T
C = 125 °C
- 1.8
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
- 3.7
A
IDM
IAS
EAS
- 12
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 6
L = 0.1 mH
TC = 25 °C
1.8
mJ
W
3
Maximum Power Dissipationa
PD
T
C = 125 °C
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
130
50
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2128 Rev. B, 31-Oct-11
Document Number: 67048
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1431EH
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 30
-
-
V
- 1
-
- 1.5
- 2
VDS = 0 V, VGS
=
20 V
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 30 V
VDS = - 30 V, TJ = 125 °C
VDS = - 30 V, TJ = 175 °C
VDS- 5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 5
-
-
V
GS = - 10 V
GS = - 10 V
ID = - 2 A
0.125
0.175
0.252
0.294
0.300
-
V
ID = - 2 A, TJ = 125 °C
ID = - 2 A, TJ = 175 °C
ID = - 1.6 A
-
-
RDS(on)
Drain-Source On-State Resistancea
VGS = - 10 V
VGS = - 4.5 V
-
-
0.230
3
-
Forward Transconductanceb
Dynamicb
gfs
VDS = - 10 V, ID = - 2 A
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
164
44
28
4.2
0.7
1
205
55
35
6.5
-
VGS = 0 V
VDS = - 25 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
V
GS = - 4.5 V VDS = - 15 V, ID = - 2.2 A
-
nC
-
-
f = 1 MHz
6.5
-
12.5
5
18.5
8
td(on)
tr
td(off)
tf
-
8
12
17
12
VDD = - 15 V, RL = 15
ID - 1 A, VGEN = - 10 V, Rg = 1
ns
-
11
8
-
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 12
A
V
Forward Voltage
VSD
IF = - 1.2 A, VGS = 0 V
- 0.85
- 1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2128 Rev. B, 31-Oct-11
Document Number: 67048
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1431EH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
6
4
2
0
10
VGS = 10 V thru 6 V
8
VGS = 5 V
6
TC = 25 °C
4
VGS = 4 V
2
TC = 125 °C
TC = - 55 °C
VGS = 3 V
0
0
2
4
6
8
10
0
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
5
4
3
2
1
0
TC = - 55 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
1.0
0.8
0.6
0.4
0.2
0
300
250
200
150
100
50
Ciss
VGS = 4.5 V
Coss
VGS = 10 V
Crss
0
2
4
6
8
10
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
S11-2128 Rev. B, 31-Oct-11
Document Number: 67048
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1431EH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.5
10
ID = 2 A
ID = 2.2 A
VDS = 15 V
8
VGS = 10 V
6
VGS = 4.5 V
4
2
0
0
1
2
3
4
5
- 50 - 25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
1.0
0.8
0.6
0.4
0.2
0.0
TJ = 150 °C
1
0.1
TJ = 25 °C
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
- 29
- 30
- 31
- 32
- 33
- 34
- 35
- 36
ID = 1 mA
0.5
0.3
ID = 250 μA
ID = 5 mA
0.1
- 0.1
- 0.3
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-2128 Rev. B, 31-Oct-11
Document Number: 67048
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1431EH
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
1
100 μs
1 ms
10 ms
100 ms
1 s, 10 s
DC
Limited by RDS(on)
*
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 130°C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2128 Rev. B, 31-Oct-11
Document Number: 67048
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1431EH
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
The characteristics shown in the two graphs
•
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67048.
S11-2128 Rev. B, 31-Oct-11
Document Number: 67048
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7_Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7_Nom
D
e
1
1.80
E
-A-
D
1.15
E1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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