SQ2337ES-T1_GE3 [VISHAY]
Small Signal Field-Effect Transistor, 2.2A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3;
| 型号： | SQ2337ES-T1_GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 2.2A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ2337ES
Vishay Siliconix
www.vishay.com
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
PRODUCT SUMMARY
VDS (V)
- 80
0.290
0.314
- 2.2
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 6 V
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
ID (A)
www.vishay.com/doc?99912
TO-236
(SOT-23)
S
G
S
1
2
G
3
D
Top View
D
SQ2337ES
P-Channel MOSFET
Marking Code: 8Qxxx
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SQ2337ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 80
V
Gate-Source Voltage
VGS
20
TC = 25 °C
- 2.2
Continuous Drain Current
ID
T
C = 125 °C
- 1.3
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
- 3.7
A
IDM
IAS
- 9
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 11
L = 0.1 mH
TC = 25 °C
EAS
6
mJ
W
3
Maximum Power Dissipationa
PD
T
C = 125 °C
1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
166
50
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S13-1184-Rev. B, 20-May-13
Document Number: 66717
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = - 250 μA
- 80
-
-
V
VDS = VGS, ID = - 250 μA
- 1.5
-
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
-
100
- 1
nA
μA
VGS = 0 V
VGS = 0 V
VDS = - 80 V
VDS = - 80 V, TJ = 125 °C
VDS = - 80 V, TJ = 175 °C
VDS5 V
-
Zero Gate Voltage Drain Current
IDSS
-
-
-
- 50
- 150
-
VGS = 0 V
-
On-State Drain Currenta
ID(on)
RDS(on)
gfs
VGS = - 10 V
VGS = - 10 V
- 8
-
-
A
S
ID = - 1.2 A
0.241
0.261
3.5
0.290
0.314
-
Drain-Source On-State Resistancea
V
GS = - 6 V
ID = - 1.1 A
-
Forward Transconductanceb
Dynamicb
VDS = - 15 V, ID = - 1.2 A
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
495
40
620
55
38
18
-
V
GS = 0 V
VDS = - 40 V, f = 1 MHz
pF
-
30
-
11.5
1.9
3.3
4.43
5
Qgs
Qgd
Rg
VGS = - 10 V
VDS = - 40 V, ID = - 1.2 A
f = 1 MHz
-
nC
-
-
2.2
-
7
td(on)
tr
td(off)
tf
8
-
10
15
27
12
VDD = - 40 V, RL = 41.6
ns
ID - 0.96 A, VGEN = - 10 V, Rg = 1
-
18
-
8
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 9
A
V
Forward Voltage
VSD
IF = - 0.8 A, VGS = 0
- 0.8
- 1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1184-Rev. B, 20-May-13
Document Number: 66717
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
7
6
4
3
1
0
7
6
4
3
1
0
VGS = 10 V thru 5V
VGS = 4 V
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0
1
2
3
4
5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
TC = - 55 °C
TC = 25 °C
TC = 125 °C
VGS = 4.5 V
VGS = 10 V
0
1
3
4
6
7
0.0
0.4
0.8
1.2
1.6
2.0
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
800
700
600
500
400
300
200
100
0
I
= 1.2 A
V
D
8
6
4
2
0
= 40 V
C
iss
DS
C
oss
C
rss
0
3
6
9
12
15
0
10
20
30
40
50
60
70
80
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S13-1184-Rev. B, 20-May-13
Document Number: 66717
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
5.0
4.0
3.0
2.0
1.0
0.0
2.5
2.1
1.7
1.3
0.9
0.5
ID = 1.2 A
VGS = 10 V
VGS = 6 V
TJ = 150 °C
TJ = 25 °C
0
2
4
6
8
10
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 85
- 90
10
ID = 1 mA
1
0.1
TJ = 150 °C
- 95
- 100
- 105
- 110
TJ = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs. Junction Temperature
1.0
0.7
I
Limited
DM
10
ID = 250 μA
100 µs
Limited by R
*
DS(on)
0.4
1
0.1
1 ms
ID = 5 mA
10 ms
0.1
100 ms
- 0.2
- 0.5
1 s
10 s, DC
BVDSS Limited
T
= 25 °C
A
Single Pulse
0.01
0.01
0.1
1
10
100
- 50 - 25
0
25
50
75 100 125 150 175
V
DS - Drain-to-Source Voltage (V)
TJ - Temperature (°C)
* VGS > minimum VGS at which RDS(on) is specified
Threshold Voltage
Safe Operating Area
S13-1184-Rev. B, 20-May-13
Document Number: 66717
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ2337ES
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50 °C/W
thJF
(t)
3. T - T = P
JM Tf
Z
DM thFf
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66717.
S13-1184-Rev. B, 20-May-13
Document Number: 66717
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SOT-23
Ordering codes for the SQ rugged series power MOSFETs in the SOT-23 package:
DATASHEET PART NUMBER
SQ2301ES
OLD ORDERING CODE a
SQ2301ES-T1-GE3
SQ2303ES-T1-GE3
SQ2308CES-T1-GE3
SQ2309ES-T1-GE3
SQ2310ES-T1-GE3
SQ2315ES-T1-GE3
SQ2318AES-T1-GE3
-
NEW ORDERING CODE
SQ2301ES-T1_GE3
SQ2303ES-T1_GE3
SQ2308CES-T1_GE3
SQ2309ES-T1_GE3
SQ2310ES-T1_GE3
SQ2315ES-T1_GE3
SQ2318AES-T1_GE3
SQ2319ADS-T1_GE3
SQ2325ES-T1_GE3
SQ2337ES-T1_GE3
SQ2348ES-T1_GE3
SQ2351ES-T1_GE3
SQ2361AEES-T1_GE3
SQ2361ES-T1_GE3
SQ2362ES-T1_GE3
SQ2389ES-T1_GE3
SQ2398ES-T1_GE3
SQ2303ES
SQ2308CES
SQ2309ES
SQ2310ES
SQ2315ES
SQ2318AES
SQ2319ADS
SQ2325ES
SQ2325ES-T1-GE3
SQ2337ES-T1-GE3
SQ2348ES-T1-GE3
SQ2351ES-T1-GE3
SQ2361AEES-T1-GE3
-
SQ2337ES
SQ2348ES
SQ2351ES
SQ2361AEES
SQ2361ES
SQ2362ES
-
SQ2389ES
-
SQ2398ES
-
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 06-Jun-16
Document Number: 65844
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
Document Number: 70739
26-Nov-03
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SQ2361AEES-T1-GE3
Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
VISHAY
SQ2361ES-T1_GE3
Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
VISHAY
©2020 ICPDF网 联系我们和版权申明