SQJ465EP_15 [VISHAY]
Automotive P-Channel 60 V (D-S) 175 °C MOSFET;
| 型号： | SQJ465EP_15 |
| 厂家： | 
VISHAY |
| 描述： | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
| 文件： | 总11页 (文件大小：764K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQJ465EP
Vishay Siliconix
www.vishay.com
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
PRODUCT SUMMARY
VDS (V)
- 60
0.085
0.115
- 8
RDS(on) (Ω) at VGS = - 10 V
R
DS(on) (Ω) at VGS = - 4.5 V
D (A)
Configuration
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
I
Single
PowerPAK® SO-8L Single
S
5.13 mm
G
6.15 mm
D
4
D
G
3
S
P-Channel MOSFET
2
S
1
S
ORDERING INFORMATION
Package
PowerPAK SO-8L
SQJ465EP-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
- 60
V
VGS
20
TC = 25 °C
- 8
Continuous Drain Currenta
ID
T
C = 125 °C
- 8
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
- 8
A
IDM
IAS
EAS
- 25
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 20
L = 0.1 mH
20
mJ
W
TC = 25 °C
45
15
Maximum Power Dissipationb
PD
TC = 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
- 55 to + 175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
70
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
3.3
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-1529-Rev. A, 08-Aug-11
Document Number: 67996
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ465EP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
- 60
-
-
V
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VDS = - 60 V
VDS = - 60 V, TJ = 125 °C
VDS = - 60 V, TJ = 175 °C
VDS ≤ - 5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
V
GS = 0 V
GS = 0 V
-
-
- 50
- 150
-
V
-
-
ID(on)
VGS = - 10 V
VGS = - 10 V
- 12
-
0.070
0.090
-
ID = - 3.5 A
-
-
-
-
-
0.085
0.115
0.143
0.176
-
V
GS = - 4.5 V
ID = - 2.5 A
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 10 V
GS = - 10 V
ID = - 3.5 A, TJ = 125 °C
ID = - 3.5 A, TJ = 175 °C
V
-
Forward Transconductanceb
Dynamicb
gfs
VDS = - 15 V, ID = - 3.5 A
10
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
912
100
60
1140
125
75
40
-
V
GS = 0 V
VDS = - 30 V, f = 1 MHz
pF
-
-
26.5
3.8
5.8
7.18
11
Qgs
Qgd
Rg
V
GS = - 10 V
VDS = - 30 V, ID = - 5 A
f = 1 MHz
-
nC
-
-
3.5
-
10.8
17
20
54
12
Ω
td(on)
tr
td(off)
tf
-
13
V
DD = - 30 V, RL = 6 Ω
ns
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
-
36
-
8
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
- 25
A
V
Forward Voltage
VSD
IF = - 3 A, VGS = 0 V
- 0.84
- 1.2
Notes
g. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
h. Guaranteed by design, not subject to production testing.
i. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1529-Rev. A, 08-Aug-11
Document Number: 67996
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ465EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
25
20
15
10
5
25
20
15
10
5
VGS = 10 V thru 5 V
VGS = 4 V
TC = 25 °C
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
20
16
12
8
TC = 25 °C
TC = - 55 °C
TC = 125 °C
TC = 25 °C
4
TC = 125 °C
TC = - 55 °C
0
0
2
4
6
8
10
0
1
2
3
4
5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.5
0.4
0.3
0.2
0.1
0
1500
1200
900
600
300
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
6
12
18
24
30
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
S11-1529-Rev. A, 08-Aug-11
Document Number: 67996
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ465EP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.1
1.8
1.5
1.2
0.9
0.6
10
8
ID = 3.5 A
ID = 5 A
VGS = 10 V
VDS = 30 V
6
VGS = 4.5 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.5
0.4
0.3
0.2
0.1
0.0
TJ = 150 °C
1
0.1
TJ = 150 °C
TJ = 25 °C
0.01
0.001
TJ = 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
0.7
- 60
- 64
- 68
- 72
- 76
- 80
ID = 1 mA
ID = 250 μA
0.5
0.3
ID = 5 mA
0.1
- 0.1
- 0.3
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-1529-Rev. A, 08-Aug-11
Document Number: 67996
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ465EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
100 μs
1 ms
10
Limited by RDS(on)
*
ID Limited
1
0.1
10 ms
100 ms, 1s, 10s, DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
JM
Z
Single Pulse
A
DM thJA
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-1529-Rev. A, 08-Aug-11
Document Number: 67996
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ465EP
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67996.
S11-1529-Rev. A, 08-Aug-11
Document Number: 67996
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
SQJ200EP
SQJ401EP
SQJ402EP
SQJ403EEP
SQJ403EP
SQJ410EP
SQJ412EP
SQJ422EP
SQJ431EP
SQJ443EP
SQJ456EP
SQJ460AEP
SQJ461EP
SQJ463EP
SQJ465EP
SQJ469EP
SQJ486EP
SQJ488EP
SQJ500AEP
SQJ840EP
SQJ844AEP
SQJ850EP
SQJ858AEP
SQJ886EP
SQJ910AEP
SQJ912AEP
SQJ940EP
SQJ942EP
SQJ951EP
SQJ952EP
SQJ960EP
SQJ963EP
SQJ968EP
SQJ980AEP
SQJ992EP
OLD ORDERING CODE a
-
NEW ORDERING CODE
SQJ200EP-T1_GE3
SQJ401EP-T1_GE3
SQJ402EP-T1_GE3
SQJ403EEP-T1_GE3
SQJ403EP-T1_GE3
SQJ410EP-T1_GE3
SQJ412EP-T1_GE3
SQJ422EP-T1_GE3
SQJ431EP-T1_GE3
SQJ443EP-T1_GE3
SQJ456EP-T1_GE3
SQJ460AEP-T1_GE3
SQJ461EP-T1_GE3
SQJ463EP-T1_GE3
SQJ465EP-T1_GE3
SQJ469EP-T1_GE3
SQJ486EP-T1_GE3
SQJ488EP-T1_GE3
SQJ500AEP-T1_GE3
SQJ840EP-T1_GE3
SQJ844AEP-T1_GE3
SQJ850EP-T1_GE3
SQJ858AEP-T1_GE3
SQJ886EP-T1_GE3
SQJ910AEP-T1_GE3
SQJ912AEP-T1_GE3
SQJ940EP-T1_GE3
SQJ942EP-T1_GE3
SQJ951EP-T1_GE3
SQJ952EP-T1_GE3
SQJ960EP-T1_GE3
SQJ963EP-T1_GE3
SQJ968EP-T1_GE3
SQJ980AEP-T1_GE3
SQJ992EP-T1_GE3
SQJ401EP-T1-GE3
SQJ402EP-T1-GE3
SQJ403EEP-T1-GE3
-
SQJ410EP-T1-GE3
SQJ412EP-T1-GE3
SQJ422EP-T1-GE3
SQJ431EP-T1-GE3
SQJ443EP-T1-GE3
SQJ456EP-T1-GE3
-
SQJ461EP-T1-GE3
SQJ463EP-T1-GE3
SQJ465EP-T1-GE3
SQJ469EP-T1-GE3
SQJ486EP-T1-GE3
SQJ488EP-T1-GE3
SQJ500AEP-T1-GE3
SQJ840EP-T1-GE3
SQJ844AEP-T1-GE3
SQJ850EP-T1-GE3
SQJ858AEP-T1-GE3
SQJ886EP-T1-GE3
SQJ910AEP-T1-GE3
SQJ912AEP-T1-GE3
SQJ940EP-T1-GE3
SQJ942EP-T1-GE3
SQJ951EP-T1-GE3
-
SQJ960EP-T1-GE3
SQJ963EP-T1-GE3
SQJ968EP-T1-GE3
SQJ980AEP-T1-GE3
SQJ992EP-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 07-Oct-15
Document Number: 65804
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
Revision: 07-Sep-15
Document Number: 69003
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MILLIMETERS
NOM.
1.07
-
INCHES
DIM.
MIN.
1.00
0.00
0.33
0.44
4.80
MAX.
1.14
0.127
0.48
0.58
5.00
MIN.
0.039
0.00
NOM.
0.042
-
MAX.
0.045
0.005
0.019
0.023
0.197
A
A1
b
0.41
0.51
4.90
0.094
0.47
0.25
5.13
4.90
3.96
1.73
1.27 BSC
6.15
4.37
3.28
-
0.013
0.017
0.189
0.016
0.020
0.193
0.004
0.019
0.010
0.202
0.193
0.156
0.068
0.050 BSC
0.242
0.172
0.129
-
b1
b2
b3
b4
c
0.20
5.00
4.80
3.86
1.63
0.30
5.25
5.00
4.06
1.83
0.008
0.197
0.189
0.152
0.064
0.012
0.207
0.197
0.160
0.072
D
D1
D2
D3
e
E
6.05
4.27
3.18
-
6.25
4.47
3.38
0.15
0.82
1.22
0.238
0.168
0.125
-
0.246
0.176
0.133
0.006
0.032
0.048
E1
E2
F
L
0.62
0.92
0.72
1.07
0.51
0.23
0.41
2.82
2.96
-
0.024
0.036
0.028
0.042
0.020
0.009
0.016
0.111
0.117
-
L1
K
W
W1
W2
W3
q
0°
10°
0°
10°
ECN: C15-1122-Rev. C, 07-Sep-15
DWG: 5976
Note
•
Millimeters will gover
Revision: 07-Sep-15
Document Number: 69003
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
www.vishay.com
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
4.061
(0.160)
3.630
(0.143)
0.595
(0.023)
0.610
(0.024)
0.710
(0.028)
2.715
(0.107)
0.860
(0.034)
0.410
(0.016)
0.820
(0.032)
1.905
1.270
(0.075)
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
Document Number: 63818
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SQJ469EP-T1_GE3
Power Field-Effect Transistor, 32A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
VISHAY
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