SQM120N04-1m7 [VISHAY]

Automotive N-Channel 80 V (D-S) 175 °C MOSFET;
SQM120N04-1m7
型号: SQM120N04-1m7
厂家: VISHAY    VISHAY
描述:

Automotive N-Channel 80 V (D-S) 175 °C MOSFET

文件: 总9页 (文件大小:215K)
中文:  中文翻译
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SQM60030E  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 80 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
• TrenchFET® power MOSFET  
• Package with low thermal resistance  
• AEC-Q101 qualified d  
VDS (V)  
DS(on) () at VGS = 10 V  
D (A)  
Configuration  
80  
R
0.0032  
120  
I
• 100 % Rg and UIS tested  
Single  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
D
TO-263  
G
S
S
D
G
Top View  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-263  
Lead (Pb)-free and Halogen-free  
SQM60030-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
80  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
120  
Continuous Drain Current a  
ID  
T
C = 125 °C  
120  
Continuous Source Current (Diode Conduction) a  
Pulsed Drain Current b  
IS  
120  
A
IDM  
IAS  
250  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
70  
L = 0.1 mH  
EAS  
245  
mJ  
W
TC = 25 °C  
375  
Maximum Power Dissipation b  
PD  
TC = 125 °C  
125  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
40  
UNIT  
Junction-to-Ambient  
PCB Mount c  
°C/W  
Junction-to-Case (Drain)  
RthJC  
0.4  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR4 material).  
d. Parametric verification ongoing.  
S15-2916-Rev. A, 14-Dec-15  
Document Number: 67284  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SQM60030E  
Vishay Siliconix  
www.vishay.com  
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
Static  
Drain-Source Breakdown Voltage  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS  
VGS(th)  
IGSS  
VGS = 0, ID = 250 μA  
80  
-
3
-
-
-
-
-
-
V
VDS = VGS, ID = 250 μA  
2.5  
3.5  
VDS = 0 V, VGS  
=
20 V  
-
100  
1
nA  
μA  
A
VGS = 0 V  
VDS = 80 V  
VDS = 80 V, TJ = 125 °C  
VDS = 80 V, TJ = 175 °C  
VDS 5 V  
-
Zero Gate Voltage Drain Current  
On-State Drain Current a  
IDSS  
ID(on)  
RDS(on)  
gfs  
VGS = 0 V  
VGS = 0 V  
VGS = 10 V  
-
50  
800  
-
-
120  
V
GS = 10 V  
ID = 30 A  
-
-
-
-
0.0026 0.0032  
Drain-Source On-State Resistance a  
VGS = 10 V  
VGS = 10 V  
ID = 30 A, TJ = 125 °C  
ID = 30 A, TJ = 175 °C  
-
-
0.0051  
0.0062  
-
Forward Transconductance b  
Dynamic b  
VDS = 15 V, ID = 30 A  
105  
S
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge c  
Gate-Source Charge c  
Gate-Drain Charge c  
Gate Resistance  
Turn-On Delay Time c  
Rise Time c  
Turn-Off Delay Time c  
Fall Time c  
Ciss  
Coss  
Crss  
Qg  
-
-
9500 12 000  
VGS = 0 V  
VDS = 25 V, f = 1 MHz  
3300  
310  
110  
35  
4500  
400  
165  
-
pF  
-
-
Qgs  
Qgd  
Rg  
VGS = 10 V  
VDS = 40 V, ID = 80 A  
f = 1 MHz  
-
nC  
-
15  
-
0.7  
-
1.45  
19  
2.2  
30  
20  
60  
15  
td(on)  
tr  
td(off)  
tf  
-
13  
VDD = 40 V, RL = 0.5   
ID 80 A, VGEN = 10 V, Rg = 1   
ns  
-
39  
-
9
Source-Drain Diode Ratings and Characteristics b  
Pulsed Current a  
ISM  
-
-
-
250  
1.5  
A
V
Forward Voltage  
VSD  
IF = 80 A, VGS = 0 V  
0.9  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
S15-2916-Rev. A, 14-Dec-15  
Document Number: 67284  
2
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SQM60030E  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)  
120  
96  
72  
48  
24  
0
160  
128  
96  
64  
32  
0
VGS = 10 V thru 6 V  
VGS = 5 V  
TC = 25°C  
TC = 125°C  
VGS = 4 V  
TC = - 55°C  
0
2
4
6
8
10  
0
2
4
6
8
10  
VDS - Drain-to-Source Voltage (V)  
VGS - Gate-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
200  
160  
120  
80  
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
TC = - 55 °C  
TC = 25 °C  
TC = 125 °C  
VGS = 10 V  
40  
0
0
8
16  
24  
32  
40  
0
20  
40  
60  
80  
100  
120  
ID - Drain Current (A)  
ID - Drain Current (A)  
Transconductance  
On-Resistance vs. Drain Current  
12000  
9600  
7200  
4800  
2400  
0
10  
8
ID = 80 A  
VDS = 40 V  
Ciss  
6
4
Coss  
2
Crss  
16  
0
0
25  
50  
75  
100  
125  
0
32  
48  
64  
80  
Qg - Total Gate Charge (nC)  
VDS - Drain-to-Source Voltage (V)  
Capacitance  
Gate Charge  
S15-2916-Rev. A, 14-Dec-15  
Document Number: 67284  
3
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SQM60030E  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
100  
ID = 20 A  
VGS = 10 V  
10  
TJ = 150 °C  
1
0.1  
TJ = 25 °C  
0.01  
0.001  
- 50 - 25  
0
25  
50  
75 100 125 150 175  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VSD - Source-to-Drain Voltage (V)  
TJ - Junction Temperature (°C)  
On-Resistance vs. Junction Temperature  
Source Drain Diode Forward Voltage  
0.015  
0.012  
0.009  
0.006  
0.003  
0.000  
0.6  
0.1  
- 0.4  
- 0.9  
- 1.4  
- 1.9  
ID = 5 mA  
TJ = 150 °C  
ID = 250 μA  
TJ = 25 °C  
0
2
4
6
8
10  
- 50 - 25  
0
25  
50  
75 100 125 150 175  
VGS - Gate-to-Source Voltage (V)  
TJ - Temperature (°C)  
On-Resistance vs. Gate-to-Source Voltage  
Threshold Voltage  
100  
97  
94  
91  
88  
85  
1000  
100  
10  
ID = 10 mA  
100 μs  
IDM Limited  
1 ms  
ID Limited  
10 ms  
100 ms, 1  
10 s, DC  
Limited by RDS(on)  
*
1
BVDSS Limited  
TC = 25 °C  
Single Pulse  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
- 50 - 25  
0
25  
50  
75 100 125 150 175  
VDS - Drain-to-Source Voltage (V)  
TJ - Junction Temperature (°C)  
* VGS > minimum VGS at which RDS(on) is specified  
Drain Source Breakdown vs. Junction Temperature  
Safe Operating Area  
S15-2916-Rev. A, 14-Dec-15  
Document Number: 67284  
4
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
SQM60030E  
Vishay Siliconix  
www.vishay.com  
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)  
1
0.1  
0.01  
0.001  
0.0001  
10-4  
10-3  
10-2  
10-1  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
10  
100  
1000  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
1
10  
Normalized Thermal Transient Impedance, Junction-to-Case  
Note  
The characteristics shown in the two graphs  
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)  
- Normalized Transient Thermal Impedance Junction to Case (25 °C)  
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single  
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part  
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities  
can widely vary depending on actual application parameters and operating conditions.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?67284.  
S15-2916-Rev. A, 14-Dec-15  
Document Number: 67284  
5
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Ordering Information  
www.vishay.com  
Vishay Siliconix  
D2PAK / TO-263 and TO-262  
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:  
DATASHEET PART NUMBER  
SQM100N04-2m7  
SQM100N10-10  
SQM110N05-06L  
SQM110P06-8m9L  
SQM120N02-1m3L  
SQM120N03-1m5L  
SQM120N04-1m7  
SQM120N04-1m7L  
SQM120N04-1m9  
SQM120N06-06  
SQM120N06-3m5L  
SQM120N10-09  
SQM120N10-3m8  
SQM120P04-04L  
SQM120P06-07L  
SQM120P10-10m1L  
SQM200N04-1m1L  
SQM200N04-1m7L  
SQM200N04-1m8  
SQM25N15-52  
OLD ORDERING CODE a  
SQM100N04-2M7-GE3  
SQM100N10-10-GE3  
SQM110N05-06L-GE3  
SQM110P06-8M9L-GE3  
SQM120N02-1M3L-GE3  
SQM120N03-1M5L-GE3  
SQM120N04-1M7-GE3  
SQM120N04-1M7L-GE3  
SQM120N04-1M9-GE3  
SQM120N06-06-GE3  
SQM120N06-3M5L-GE3  
SQM120N10-09-GE3  
SQM120N10-3M8-GE3  
SQM120P04-04L-GE3  
SQM120P06-07L-GE3  
-
NEW ORDERING CODE  
SQM100N04-2M7_GE3  
SQM100N10-10_GE3  
SQM110N05-06L_GE3  
SQM110P06-8M9L_GE3  
SQM120N02-1M3L_GE3  
SQM120N03-1M5L_GE3  
SQM120N04-1M7_GE3  
SQM120N04-1M7L_GE3  
SQM120N04-1M9_GE3  
SQM120N06-06_GE3  
SQM120N06-3M5L_GE3  
SQM120N10-09_GE3  
SQM120N10-3M8_GE3  
SQM120P04-04L_GE3  
SQM120P06-07L_GE3  
SQM120P10_10m1LGE3  
SQM200N04-1M1L_GE3  
SQM200N04-1M7L_GE3  
SQM200N04-1M8_GE3  
SQM25N15-52_GE3  
SQM35N30-97_GE3  
SQM40010EL_GE3  
SQM200N04-1M1L-GE3  
SQM200N04-1M7L-GE3  
SQM200N04-1M8-GE3  
SQM25N15-52-GE3  
SQM35N30-97-GE3  
-
SQM35N30-97  
SQM40010EL  
SQM40N10-30_GE3  
SQM40N15-38_GE3  
SQM40P10-40L_GE3  
SQM47N10-24L_GE3  
SQM50020EL_GE3  
SQM40N10-30  
SQM40N10-30-GE3  
SQM40N15-38-GE3  
SQM40P10-40L-GE3  
SQM47N10-24L-GE3  
-
SQM40N15-38  
SQM40P10-40L  
SQM47N10-24L  
SQM50020EL  
SQM50N04-4M0L_GE3  
SQM50N04-4M1_GE3  
SQM50P03-07_GE3  
SQM50N04-4m0L  
SQM50N04-4m1  
SQM50P03-07  
SQM50N04-4M0L-GE3  
SQM50N04-4M1-GE3  
SQM50P03-07-GE3  
SQM50P04-09L-GE3  
SQM50P06-15L-GE3  
SQM50P08-25L-GE3  
-
SQM50P04-09L_GE3  
SQM50P06-15L_GE3  
SQM50P08-25L_GE3  
SQM60030E_GE3  
SQM50P04-09L  
SQM50P06-15L  
SQM50P08-25L  
SQM60030E  
SQM60N06-15_GE3  
SQM60N20-35_GE3  
SQM70060EL_GE3  
SQM60N06-15  
SQM60N06-15-GE3  
SQM60N20-35-GE3  
-
SQM60N20-35  
SQM70060EL  
SQM85N15-19_GE3  
SQV120N10-3m8_GE3  
SQV120N06-4m7L_GE3  
SQM85N15-19  
SQM85N15-19-GE3  
SQV120N10-3m8-GE3  
-
SQV120N10-3m8  
SQV120N06-4m7L  
Note  
a. Old ordering code is obsolete and no longer valid for new orders  
Revision: 06-Jul-16  
Document Number: 67164  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Package Information  
www.vishay.com  
Vishay Siliconix  
TO-263 (D2PAK): 3-LEAD  
-B-  
A
E
c2  
6
E1  
K
-A-  
E3  
A
e
A
b2  
b
c
Detail “A”  
E2  
M
M
A
0.010  
PL  
2
INCHES  
MIN.  
MILLIMETERS  
MIN.  
DIM.  
A
MAX.  
0.190  
0.039  
0.035  
0.055  
0.018  
0.028  
0.017  
0.027  
0.055  
0.380  
0.240  
0.042  
0.055  
0.052  
0.410  
-
MAX.  
4.826  
0.990  
0.889  
1.397  
0.457  
0.711  
0.431  
0.685  
1.397  
9.652  
6.096  
1.067  
1.397  
1.321  
10.414  
-
0° - 5°  
0.160  
0.020  
0.020  
0.045  
0.013  
0.023  
0.013  
0.023  
0.045  
0.340  
0.220  
0.038  
0.045  
0.044  
0.380  
0.245  
0.355  
0.072  
4.064  
0.508  
0.508  
1.143  
0.330  
0.584  
0.330  
0.584  
1.143  
8.636  
5.588  
0.965  
1.143  
1.118  
9.652  
6.223  
9.017  
1.829  
b
L1  
b1  
b2  
DETAIL A (ROTATED 90°)  
Thin lead  
c*  
Thick lead  
Thin lead  
b
c1  
Thick lead  
b1  
c2  
D
D1  
D2  
D3  
D4  
E
SECTION A-A  
E1  
E2  
E3  
e
0.375  
0.078  
9.525  
1.981  
0.100 BSC  
2.54 BSC  
K
0.045  
0.575  
0.090  
0.040  
0.050  
0.055  
0.625  
0.110  
0.055  
0.070  
1.143  
14.605  
2.286  
1.016  
1.270  
1.397  
15.875  
2.794  
1.397  
1.778  
L
Notes  
1. Plane B includes maximum features of heat sink tab and plastic.  
2. No more than 25 % of L1 can fall above seating plane by  
max. 8 mils.  
3. Pin-to-pin coplanarity max. 4 mils.  
4. *: Thin lead is for SUB, SYB.  
L1  
L2  
L3  
L4  
M
0.010 BSC  
0.254 BSC  
-
0.002  
-
0.050  
Thick lead is for SUM, SYM, SQM.  
5. Use inches as the primary measurement.  
6. This feature is for thick lead.  
ECN: T13-0707-Rev. K, 30-Sep-13  
DWG: 5843  
Revison: 30-Sep-13  
Document Number: 71198  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
AN826  
Vishay Siliconix  
2
RECOMMENDED MINIMUM PADS FOR D PAK: 3-Lead  
0.420  
(10.668)  
0.145  
(3.683)  
0.135  
(3.429)  
0.200  
0.050  
(5.080)  
(1.257)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
Document Number: 73397  
11-Apr-05  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Revision: 13-Jun-16  
Document Number: 91000  
1

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VISHAY

SQM120N04-1M7L-GE3

TRANSISTOR 120 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
VISHAY

SQM120N04-1M7L_17

Automotive N-Channel 40 V (D-S) 175 MOSFET
VISHAY

SQM120N04-1M7L_GE3

Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
VISHAY

SQM120N04-1M7_GE3

Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2
VISHAY

SQM120N04-1m9

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
VISHAY

SQM120N04-1M9-GE3

Automotive P-Channel 60 V (D-S) 175 MOSFET
VISHAY

SQM120N06-06

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
VISHAY

SQM120N06-06-GE3

TRANSISTOR 120 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
VISHAY

SQM120N06-06_GE3

Power Field-Effect Transistor, 120A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
VISHAY

SQM120N06-3m5L

Automotive N-Channel 80 V (D-S) 175 °C MOSFET
VISHAY