SS10P4C-E3/87A [VISHAY]
High Current Density Surface Mount Schottky Barrier Rectifiers; 高电流密度表面贴装肖特基整流器
| 型号： | SS10P4C-E3/87A |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SS10P3C & SS10P4C
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
eSMPTM Series
• Ideal for automated placement
• Low forward voltage drop, low power
losses
K
• High efficiency
1
• Low thermal resistance
• Meets MSL level 1, per J-STD-020
• Solder dip 260 °C, 40 s
2
TO-277A (SMPC)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Anode 1
K
Cathode
Anode 2
• Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
30 V, 40 V
200 A
IFSM
EAS
20 mJ
V
F at IF = 5 A
TJ max.
0.37 V
150 °C
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS10P3C
S103C
30
SS10P4C
S104C
40
UNIT
Device marking code
VRRM
IF(AV)
Maximum repetitive peak reverse voltage
V
A
total device
per diode
10
5.0
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load per diode
IFSM
200
20
A
EAS
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode
Operating junction and storage temperature range
mJ
°C
TJ, TSTG
- 55 to + 150
Document Number: 89035
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
SS10P3C & SS10P4C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
IF = 2.5 A
SYMBOL
TYP.
MAX.
UNIT
0.40
0.45
-
TA = 25 °C
IF = 5.0 A
0.53
Instantaneous forward voltage per diode (1)
VF
V
IF = 2.5 A
IF = 5.0 A
0.29
0.37
-
TA = 125 °C
0.44
TA = 25 °C
56
28
550
45
µA
mA
Reverse current per diode (2)
rated VR
IR
TA = 125 °C
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
430
-
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
SS10P3C
SS10P4C
UNIT
(1)
RθJA
RθJL
60
3
°C/W
Typical thermal resistance per diode
Note:
(1) Units mounted on recommended P.C.B. 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SS10P4C-E3/86A
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
86A
87A
86A
87A
1500
6500
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS10P4C-E3/87A
SS10P4CHE3/86A (1)
SS10P4CHE3/87A (1)
SS10P4C-M3/86A
SS10P4C-M3/87A
SS10P4CHM3/86A (1)
SS10P4CHM3/87A (1)
Note:
(1) High reliability/automotive grade (AEC-Q101 qualified)
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89035
Revision: 30-Jul-08
New Product
SS10P3C & SS10P4C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
12
1000
100
Resistive or Inductive Load
10
TA = 150 °C
10
1
8
TA = 125 °C
6
0.1
0.01
4
TA = 25 °C
TL measured
at the Cathode Band Terminal
2
0
0.001
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics Per Diode
2.5
10 000
D = 0.3
D = 0.8
D = 0.5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.2
D = 0.1
2.0
1.5
1.0
0.5
0
D = 1.0
1000
T
D = tp/T
tp
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
TA = 150 °C
10
TA = 125 °C
1
10
TA = 25 °C
0.1
Junction to Ambient
0.01
1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 89035
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
New Product
SS10P3C & SS10P4C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
0.026 (0.65) NOM.
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.189
MIN.
0.087 (2.20)
0.075 (1.90)
(4.80)
0.189 (4.80)
0.173 (4.40)
0.186
(4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050
(1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055
(1.40)
MIN.
Conform to JEDEC TO-277A
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89035
Revision: 30-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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