SS15P3S [VISHAY]
SMD Photovoltaic Solar Cell Protection Schottky Rectifier; SMD光伏太阳能电池保护肖特基整流器
| 型号： | SS15P3S |
| 厂家： | 
VISHAY |
| 描述： | SMD Photovoltaic Solar Cell Protection Schottky Rectifier |
| 文件： | 总5页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SS15P3S
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
FEATURES
eSMP® Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
K
• Low forward voltage drop, low power losses
• High efficiency
1
• Low thermal resistance
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
TO-277A (SMPC)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
K
Anode 1
Anode 2
• Halogen-free according to IEC 61249-2-21 definition
Cathode
MECHANICAL DATA
Case: TO-277A (SMPC)
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
15 A
30 V
Base P/N-M3
- halogen-free, RoHS compliant, and
VRRM
commercial grade
IFSM
280 A
20 mJ
0.42 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
EAS
VF at IF = 15 A
TJ max.
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS15P3S
153S
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF
30
V
A
15 (1)
Maximum DC forward current (fig. 1)
4.5 (2)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
280
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C
Operating junction and storage temperature range
EAS
TOP, TSTG
TJ
20
mJ
°C
°C
- 55 to + 150
200
Junction temperature in DC forward current without reverse bias, t 1 h (3)
Notes
(1)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
Free air, mounted on recommended copper pad area
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
(2)
(3)
Document Number: 89128
Revision: 13-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
19
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS15P3S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.43
0.50
0.32
0.42
150
59
MAX.
-
UNIT
IF = 7.5 A
TA = 25 °C
IF = 15 A
IF = 7.5 A
IF = 15 A
0.57
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.49
1000
120
-
TA = 25 °C
μA
mA
pF
(2)
Reverse current
VR = 30 V
IR
TA = 125 °C
Typical junction capacitance
4.0 V, 1 MHz
CJ
930
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
100
UNIT
(1)
RJA
Typical thermal resistance
°C/W
(2)
RJM
3
Notes
(1) Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient.
(2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance RJM - junction to mount.
ORDERING INFORMATION (Example)
PREFERRED P/N
SS15P3S-M3/86A
SS15P3S-M3/87A
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.10
0.10
86A
87A
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Notes
(1)
18
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x
100 mm fin heat sink, TM measured at the terminal of cathode
band
TM = 100 °C (1)
16
TA = 25 °C (2)
14
(2)
(3)
Mounted on 30 mm x 30 mm Al PCB (RJA = 20 °C/W)
TA = 25 °C (3)
12
Mounted on 30 mm x 30 mm x 2 copper pad areas FR4 PCB
(RJA = 30 °C/W)
10
8
TA = 25 °C (4)
(4)
(5)
Mounted on 25 mm x 25 mm x 2 copper pad areas FR4 PCB
(RJA = 30 °C/W)
6
(5)
4
Free air, mounted on recommended copper pad area
(RJA = 100 °C/W)
2
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Fig. 1 - Maximum Current Derating Curve
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89128
Revision: 13-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS15P3S
Vishay General Semiconductor
9
8
7
6
5
4
3
2
1
0
1000
D = 0.8
TA = 150 °C
TA = 125 °C
D = 0.5
100
10
D = 0.3
D = 0.2
D = 1.0
1
D = 0.1
T
0.1
0.01
T
A = 25 °C
D = tp/T
tp
0.001
0
2
4
6
8
10
12
14
16
18
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
1000
100
100
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
T
A = 125 °C
T
A = 25 °C
1
0.1
0.1
1
10
100
0
0.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
0.2
0.3
0.4
0.5
0.6
0.7
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Document Number: 89128
Revision: 13-May-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
21
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SS15P3S
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC TO-277A
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89128
Revision: 13-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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相关型号：
SS15P3S-M3/87A
DIODE 15 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode
VISHAY
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