SS1H10-M3/61T [VISHAY]
DIODE SCHOTTKY 1A 100V DO-214AC;
| 型号： | SS1H10-M3/61T |
| 厂家： | 
VISHAY |
| 描述： | DIODE SCHOTTKY 1A 100V DO-214AC |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS1H9, SS1H10
Vishay General Semiconductor
www.vishay.com
High-Voltage Surface-Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
Available
SMA (DO-214AC)
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Cathode
Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
1.0 A
90 V, 100 V
50 A
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
0.62 V
IR
1.0 μA
TJ max.
175 °C
Package
SMA (DO-214AC)
Single
Circuit configuration
(“_X” denotes revision code e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1H9
S9
SS1H10
S10
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
VRRM
VRWM
VDC
90
100
V
V
V
A
90
100
90
100
IF(AV)
1.0
50
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Storage temperature range
IRRM
TSTG
TJ
1.0
A
-65 to +175
175
°C
°C
Maximum operating temperature
Revision: 13-May-2020
Document Number: 88747
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS1H9, SS1H10
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS1H9
SS1H10
UNIT
TJ = 25 °C
0.77
0.62
0.86
0.70
1.0
IF = 1.0 A
IF = 2.0 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Maximum instantaneous forward voltage (1)
VF
V
μA
(2)
Maximum reverse current at rated VR
IR
0.5
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1H9
SS1H10
UNIT
RθJA
88
30
Maximum thermal resistance (1)
°C/W
RθJL
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
1800
DELIVERY MODE
SS1H10-E3/61T
0.064
61T
5AT
H
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS1H10-E3/5AT
0.064
7500
SS1H10HE3_B/H (1)
SS1H10HE3_B/I (1)
SS1H10-M3/61T
SS1H10-M3/5AT
SS1H10HM3_B/H (1)
SS1H10HM3_B/I (1)
0.064
1800
0.064
I
7500
0.064
61T
5AT
H
1800
0.064
7500
0.064
1800
0.064
I
7500
Note
(1)
AEC-Q101 qualified
Revision: 13-May-2020
Document Number: 88747
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS1H9, SS1H10
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
10000
1000
100
1.2
TJ = 175 °C
1000
1.0
TJ = 150 °C
100
10
TJ = 125 °C
0.8
0.6
0.4
0.2
0
1
TJ = 25 °C
TJ = -40 °C
0.1
0.01
0.001
10
25
50
75
100
125
150
175
20
30
40
50
60
70
80
90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
60
50
40
30
20
10
0
1000
100
10
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
10
10000
1000
100
100
TJ = 175 °C
TJ = 150 °C
1
10
TJ = 125 °C
TJ = 25 °C
0.1
0.01
TJ = -40 °C
10
1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 13-May-2020
Document Number: 88747
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS1H9, SS1H10
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 13-May-2020
Document Number: 88747
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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