SS3H10-M3/57T [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN;
| 型号： | SS3H10-M3/57T |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS3H9-M3, SS3H10-M3
Vishay General Semiconductor
www.vishay.com
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AB (SMC)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
3.0 A
90 V, 100 V
100 A
MECHANICAL DATA
0.65 V
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
IR
20 μA
TJ max.
175 °C
Base P/N-M3
- halogen-free, RoHS-compliant, and
Package
DO-214AB (SMC)
Single die
commercial grade
Diode variation
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3H9
MS9
90
SS3H10
MS10
100
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: TL = 115 °C
VRRM
VRWM
VDC
V
V
V
A
90
100
90
100
IF(AV)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Critical rate of rise of reverse voltage
IRRM
dV/dt
1.0
A
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
Revision: 09-Dec-13
Document Number: 89497
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3H9-M3, SS3H10-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS3H9
SS3H10
UNIT
TJ = 25 °C
0.8
0.65
20
Maximum instantaneous forward voltage (1) IF = 3.0 A
VF
V
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
μA
(2)
Maximum reverse current at rated VR
IR
4
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3H9
SS3H10
UNIT
Typical thermal resistance, junction to lead at TL = 25 °C
Typical thermal resistance, junction to ambient (1)
RJL
20
50
°C/W
RJA
Note
(1)
Units mounted on P.C.B. with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
SS3H9-M3/57T
SS3H9-M3/9AT
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.235
57T
9AT
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.235
3500
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
125
100
75
50
25
0
1
10
100
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 09-Dec-13
Document Number: 89497
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3H9-M3, SS3H10-M3
Vishay General Semiconductor
www.vishay.com
100
10
1000
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
100
TJ = 175 °C
TJ = 150 °C
1000
100
10
T
J = 125 °C
10
1
TJ = 25 °C
0.1
1
0.01
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 09-Dec-13
Document Number: 89497
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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