SS3P3-HE3/84A [VISHAY]
3A, 30V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN;
| 型号： | SS3P3-HE3/84A |
| 厂家： | 
VISHAY |
| 描述： | 3A, 30V, SILICON, RECTIFIER DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS3P3
Vishay General Semiconductor
New Product
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-220AA (SMP)
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
3 A
30 V
MECHANICAL DATA
50 A
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
EAS
11.25 mJ
0.43 V
150 °C
VF
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
Tj max.
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise specified)
A
PARAMETER
SYMBOL
SS3P3
33
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
VRRM
IF(AV)
30
V
A
3.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
Non-repetitive avalanche energy at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
EAS
11.25
10000
mJ
V/µs
°C
dv/dt
Operating junction and storage temperature range
T
J, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
at IF = 3 A,
at IF = 3 A,
TJ = 25 °C
TJ = 125 °C
0.52
0.43
0.58
0.48
VF
V
Maximum reverse current at
rated VR
TJ = 25 °C
TJ = 125 °C
-
200
20
µA
mA
IR
(1)
9.0
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
130
pF
Document Number 88944
07-Feb-06
www.vishay.com
1
SS3P3
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise specified)
A
PARAMETER
SYMBOL
SS3P3
UNIT
RθJA
RθJL
ReJC
95
15
20
Typical thermal resistance (2)
°C/W
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 15 x 15 mm copper pad areas.
RθJL is measured at the terminal of cathode band. RθJC is measured at the top centre of the body
ORDERING INFORMATION
PREFERRED P/N
SS3P3-E3/84A
SS3P3-E3/85A
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
0.024
84A
85A
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
0.024
10000
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise specified)
A
100
10
3.0
2.5
2.0
TJ = 150 °C
1.5
1.0
TJ = 25 °C
1
T
J
measured
0.5
0
at the cathode band terminal
TJ = 125 °C
0.1
0.1
80
90
100
110
120
130
140
150
0.3
0.5
0.7
0.9
1.1
1.3
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Figure 1. Forward Current Derating Curve
Figure 3. Typical Instantaneous Forward Characteristics
50
100000
10000
1000
TJ = 150 °C
40
30
20
TJ = 125 °C
100
10
TJ = 25 °C
10
0
1
0.1
1
10
100
10
20
30
40
50
60
70
80
90
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Leakage Characteristics
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Document Number 88944
07-Feb-06
SS3P3
Vishay General Semiconductor
1000
1000
100
10
100
1
0.1
1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (s)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
PACKAGE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF
Cathode band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
(2.54)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Document Number 88944
07-Feb-06
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3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
VISHAY
SS3P3HM3/85A
DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
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