SS8PH9HM3/87A [VISHAY]
DIODE 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode;
| 型号： | SS8PH9HM3/87A |
| 厂家： | 
VISHAY |
| 描述： | DIODE 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN, Rectifier Diode PC 功效 光电二极管 |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8PH9, SS8PH10
Vishay General Semiconductor
www.vishay.com
High Current Density Surface Mount
High Voltage Schottky Rectifier
FEATURES
eSMP® Series
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High barrier technology, TJ = 175 °C maximum
• Low leakage current
K
1
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
TO-277A (SMPC)
Anode 1
Anode 2
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
IF(AV)
8.0 A
VRRM
90 V, 100 V
150 A
IFSM
EAS
20 mJ
MECHANICAL DATA
VF at IF = 8.0 A
IR
0.720 V
0.18 μA
175 °C
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
TJ max.
Base P/N-M3
commercial grade
Base P/NHM3
AEC-Q101 qualified
-
halogen-free, RoHS-compliant, and
Package
TO-277A (SMPC)
Single
-
halogen-free, RoHS-compliant, and
Diode variations
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS8PH9
8H9
SS8PH10
8H10
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
90
100
V
A
8.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
EAS
20
mJ
°C
at IAS = 2.0 A, TJ = 25 °C
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
Revision: 23-Dec-14
Document Number: 88989
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS8PH9, SS8PH10
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.769
0.850
0.634
0.720
0.18
MAX.
-
UNIT
IF = 4.0 A
TA = 25 °C
IF = 8.0 A
IF = 4.0 A
IF = 8.0 A
0.90
-
(1)
Instantaneous forward voltage
VF
V
TA = 125 °C
0.76
2.0
300
-
TA = 25 °C
(2)
Reverse current
Rated VR
IR
μA
pF
TA = 125 °C
110
Typical junction capacitance
4.0 V, 1 MHz
CJ
140
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS8PH9
SS8PH10
UNIT
°C/W
(1)
RJA
65
3
Typical thermal resistance
RJL
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS8PH10-M3/86A
SS8PH10-M3/87A
SS8PH10HM3/86A (1)
SS8PH10HM3/87A (1)
SS8PH10HM3_A/H (1)
SS8PH10HM3_A/I (1)
0.10
0.10
0.10
0.10
0.10
0.10
86A
87A
86A
87A
H
1500
6500
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
I
Note
(1)
AEC-Q101 qualified
Revision: 23-Dec-14
Document Number: 88989
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS8PH9, SS8PH10
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
10
9
10 000
1000
100
10
Resistive or Inductive Load
TA = 175 °C
TA = 150 °C
8
7
T
A = 125 °C
6
5
4
3
1
0.1
TL measured
at the Cathode Band Terminal
TA = 25 °C
2
1
0
0.01
0.001
100 110
120 130 140
150
160
170 180
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
8.0
1000
100
10
D = 0.5
D = 0.8
D = 0.3
7.0
6.0
5.0
D = 0.2
D = 0.1
4.0
3.0
D = 1.0
T
2.0
1.0
0
D = tp/T
tp
0
1.0 2.0 3.0 4.0
5.0 6.0 7.0 8.0
9.0
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
100
Junction to Ambient
TA = 175 °C
TA = 150 °C
TA = 125 °C
10
1
TA = 25 °C
0.1
0.01
1
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
0.1
1
10
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 23-Dec-14
Document Number: 88989
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS8PH9, SS8PH10
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 23-Dec-14
Document Number: 88989
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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