SST5460T [VISHAY]
暂无描述;
| 型号： | SST5460T |
| 厂家： | 
VISHAY |
| 描述： | 暂无描述 晶体 小信号场效应晶体管 |
| 文件： | 总5页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460
2N5461
2N5462
SST5460
SST5461
SST5462
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS) IDSS Min (mA)
2N/SST5460
2N/SST5461
2N/SST5462
0.75 to 6
1 to 7.5
1.8 to 9
40
40
40
1
1.5
2
–1
–2
–4
FEATURES
BENEFITS
APPLICATIONS
D High Input Impedance
D Low Signal Loss/System Error
D Low-Current, Low-Voltage Amplifiers
D Very Low Noise
D High System Sensitivity
D High-Side Switching
D High Gain: AV = 80 @ 20 mA
D Low Capacitance: 1.2 pF Typical
D High-Quality Low-Level Signal
D Ultrahigh Input Impedance
Amplification
Pre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
2
S
D
G
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
D
S
1
2
2N5460
2N5461
2N5462
3
G
*Marking Code for TO-236
3
Top View
Top View
ABSOLUTE MAXIMUM RATINGS
1
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-1
2N/SST5460 Series
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N/SST5460
2N/SST5461
2N/SST5462
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= 10 mA , V = 0 V
55
40
40
40
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
V
= –15 V, I = –1 mA
0.75
6
7.5
1.8
9
1
GS(off)
DS
D
b
Saturation Drain Current
I
= –15 V, V = 0 V
–1
–5
5
–2
–9
5
–4
–16
5
mA
nA
mA
DSS
DS
GS
V
= 20 V, V = 0 V
0.003
0.0003
3
GS
DS
Gate Reverse Current
I
GSS
T
A
= 100_C
1
1
1
Gate Operating Current
Drain Cutoff Current
I
G
V
= –20 V, I = –0.1 mA
DG D
pA
I
V
= –15 V, V = 10 V
–5
D(off)
DS
GS
I
I
I
= –0.1 mA
= –0.2 mA
= –0.4 mA
1.3
0.5
4
D
D
D
2.3
0.8
4.5
Gate-Source Voltage
V
V
= –15 V
DS
GS
V
3.8
1.5
6
6
Gate-Source
Forward Voltage
V
I
G
= –1 mA , V = 0 V
–0.7
GS(F)
DS
Dynamic
Common-Source
Forward Transconductance
g
1
4
1.5
5
2
mS
fs
V
= –15 V, V = 0 V
DS
GS
f = 1 kHz
Common-Source
Output Conductance
g
75
7
75
7
75
7
mS
os
2N
4.5
4.5
Common-Source
Reverse Transfer
Capacitance
C
iss
SST
Common-Source
Reverse Transfer
Capacitance
V
= –15 V, V = 0 V
f = 1 MHz
DS
GS
C
rss
1.2
pF
2N
SST
2N
1.5
1.5
15
2
2
2
Common-Source
Output Capacitance
C
oss
115
2.5
115
2.5
115
2.5
Equivalent Input
Noise Voltage
V
V
= –15 V, V = 0 V
f = 100 Hz
nV⁄
√Hz
DS
DS
GS
e
n
SST
2N
15
= –15 V, V = 0 V
0.2
0.2
GS
Noise Figure
Notes
NF
dB
f = 100 Hz, R = 1 MW
G
SST
BW = 1 Hz
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIB
b. Pulse test: PW v300 ms duty cycle v2%.
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-2
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
–20
–16
–12
–8
5
1000
800
600
400
200
0
100
80
60
40
20
0
g
fs
IDSS
rDS
g
os
2.5
g
@ VDS = –15 V, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
–4
fs
rDS @ ID = –100 mA, VGS = 0 V
@ VDS = –15 V, VGS = 0 V
g
os
f = 1 kHz
f = 1 kHz
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS(off) – Gate-Source Cutoff Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
Output Characteristics
–2
–1.6
–1.2
–0.8
–0.4
0
–10
–8
–6
–4
–2
0
VGS(off) = 1.5 V
VGS = 0 V
0.2 V
VGS(off) = 3 V
0.4 V
0.6 V
V
= 0 V
GS
0.5 V
1.0 V
0.8 V
1.0 V
1.5 V
2.0 V
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
–2
–1.6
–1.2
–0.8
–0.4
0
–0.5
–0.4
–0.3
–0.2
–0.1
0
V
= 0 V
GS
VGS(off) = 1.5 V
VGS = 0 V
VGS(off) = 3 V
0.4 V
0.5 V
0.6 V
0.8 V
1.0 V
0.2 V
1.5 V
2.0 V
1.0 V
1.2 V
2.5 V
0
–0.2
–0.4
–0.6
–0.8
–1
0
–0.2
–0.4
–0.6
–0.8
–1
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-3
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transfer Characteristics
–5
–4
–3
–2
–1
0
–10
–8
–6
–4
–2
0
VGS(off) = 1.5 V
VDS = –15 V
VGS(off) = 3 V
VDS = –15 V
T
A
= –55_C
T
A
= –55_C
25_C
25_C
125_C
125_C
0
0.4
0.8
1.2
1.6
2
0
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Gate Leakage Current
10 nA
1 nA
1000
800
600
400
T
A
= 25_C
–5 mA
T
A
= 125_C
VGS(off) = 1.5 V
100 pA
–1 mA
IGSS @ 125_C
3 V
–0.1 mA
10 p A
1 pA
–5 mA
T
A
= 25_C
4 V
IGSS @ 25_C
200
0
0.1 pA
–0.1
–1
–10
–10
–20
–30
–40
–50
VDG – Drain-Gate Voltage (V)
ID – Drain Current (mA)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
5
4
3
2
1
0
5
4
3
2
1
0
VGS(off) = 1.5 V
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
VDS = –15 V
f = 1 kHz
T
A
= –55_C
T
A
= –55_C
25_C
25_C
125_C
125_C
0
0.4
0.8
1.2
1.6
2
1
2
3
4
5
V
GS – Gate-Source Voltage (V)
V
GS – Gate-Source Voltage (V)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-4
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Forward Transconductance
vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
80
10
VGS(off) = 3 V
VGS(off) = 1.5 V
T
A
= –55_C
60
VGS(off) = 3 V
1
25_C
40
125_C
VDS = –15 V
f = 1 kHz
20
0
Assume V = –15 V, V = –5 V
DD
DS
g
R
fs
L
10 V
+
A
+
R
V
L
1 ) R g
I
os
L
D
0.1
–0.01
–0.1
–1
–0.1
–1
ID – Drain Current (mA)
–10
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
8
5
f = 1 MHz
f = 1 MHz
6
2.5
4
–5 V
–5 V
2
–15 V
–15 V
0
0
0
4
8
12
16
20
0
4
8
12
16
20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
100
20
16
12
8
VDS = –15 V
VGS(off) = 3 V
T
A
= –55_C
ID = –0.1 mA
ID = –1 mA
25_C
10
125_C
–1
4
0
VDS = –15 V
f = 1 kHz
1
–0.1
–10
10
100
1 k
10 k
100 k
f – Frequency (Hz)
ID – Drain Current (mA)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-5
相关型号：
SST5460T1
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
CALOGIC
SST5460T2
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
CALOGIC
SST5460TT1
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
TEMIC
SST5460TT1
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB, TO-236, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SST5460TT2
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
TEMIC
SST5460TT2-E3
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB, LEAD FREE, TO-236, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SST5461
P-Channel JFETsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SST5461-E3
Small Signal Field-Effect Transistor, P-Channel, Junction FETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SST5461T
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
TEMIC
SST5461T2
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
CALOGIC
SST5461TT1
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236,Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
TEMIC
SST5461TT1
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB, TO-236, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明