ST1200C12K1 [VISHAY]
Phase Control Thyristors;
| 型号： | ST1200C12K1 |
| 厂家： | 
VISHAY |
| 描述： | Phase Control Thyristors 栅 栅极 |
| 文件： | 总9页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
A-24 (K-PUK)
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
A-24 (K-PUK)
Single SCR
1650 A
VDRM/VRRM
1200 V, 1400 V, 1600 V, 1800 V, 2000 V
VTM
1.73 V
100 mA
IGT
TJ
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
1650
55
A
°C
A
IT(AV)
Ths
3080
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
30 500
32 000
4651
A
kA2s
4250
VDRM/VRRM
1200 to 2000
200
V
tq
Typical
μs
°C
TJ
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
12
14
16
18
20
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
VS-ST1200C..K
100
Revision: 09-Jan-15
Document Number: 94394
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
1650 (700)
55 (85)
3080
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
30 500
32 000
25 700
26 900
4651
No voltage
reapplied
t = 8.3 ms
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
No voltage
reapplied
t = 8.3 ms
4250
Maximum I2t for fusing
I2t
kA2s
t = 10 ms
3300
100 % VRRM
reapplied
t = 8.3 ms
3000
Maximum I2t for fusing
I2t
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
46 510
0.91
kA2s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
V
1.01
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
0.21
m
V
rt2
0.19
VTM
IH
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.73
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
dI/dt
1000
A/μs
Gate current 1 A, dIg/dt = 1 A/μs
Typical delay time
td
tq
1.9
Vd = 0.67 % VDRM, TJ = 25 °C
μs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
Typical turn-off time
200
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
V/μs
off-state voltage
Maximum peak reverse and
off-state leakage current
IRRM
,
100
mA
IDRM
Revision: 09-Jan-15
Document Number: 94394
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
VALUES
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = TJ maximum, tp 5 ms
TYP.
MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
16
3
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
3.0
20
5.0
+ VGM
- VGM
TJ = TJ maximum, tp 5 ms
V
TJ = -40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
1.4
1.1
0.9
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
-40 to 125
°C
Maximum storage temperature range
TStg
-40 to 150
0.0.42
0.021
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.006
Maximum thermal resistance,
case to heatsink
RthC-hs
0.003
24 500
(2500)
N
(kg)
Mounting force, 10 %
Approximate weight
Case style
425
g
See dimensions - link at the end of datasheet
A-24 (K-PUK)
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.003
DOUBLE SIDE
0.003
SINGLE SIDE
0.002
DOUBLE SIDE
0.002
180°
120°
90°
0.004
0.004
0.004
0.004
0.005
0.005
0.005
0.005
TJ = TJ maximum
K/W
60°
0.007
0.007
0.007
0.007
30°
0.012
0.012
0.012
0.012
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 09-Jan-15
Document Number: 94394
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
130
120
110
100
90
80
70
60
50
130
120
110
100
90
ST1200C..K Series
ST1200C..K Series
(Single Side Cooled)
thJ-hs
(Double Side Cooled)
R
(DC) = 0.021 K/W
R
(DC) = 0.042 K/W
thJ-hs
Conduction Period
Conduction Angle
90°
80
30°
60°
70
30°
60
120°
180°
60°
40
30
20
90°
120°
50
180°
DC
40
0
600 1200 1800 2400 3000 3600
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
4000
3500
3000
2500
2000
1500
1000
500
130
180°
120°
ST1200C..K Series
(Single Side Cooled)
thJ-hs
120
110
100
90
80
70
60
50
40
30
90°
R
(DC) = 0.042 K/W
60°
30°
RMS Limit
Conduction Period
30°
Conduction Angle
ST1200C..K Series
60°
90°
120°
180°
T
= 125°C
J
DC
800 1200 1600 2000
0
20
0
400
800 1200 1600 2000
0
400
AverageOn-stateCurrent(A)
Fig. 5 - On-State Power Loss Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
130
5000
ST1200C..K Series
DC
180°
120
110
100
90
(Double Side Cooled)
R
(DC) = 0.021 K/W
thJ-hs
4000 120°
90°
60°
30°
3000
2000
1000
0
Conduction Angle
80
RMS Limit
70
Conduction Period
ST1200C..K Series
30°
60
60°
90°
50
120°
180°
T
= 125°C
40
J
30
0
400
AverageOn-stateCurrent(A)
Fig. 3 - Current Ratings Characteristics
800 1200 1600 2000
0
600 1200 1800 2400 3000 3600
AverageOn-stateCurrent(A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 09-Jan-15
Document Number: 94394
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
32000
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
28000
26000
24000
22000
20000
18000
16000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
14000 ST1200C..K Series
12000
ST1200C..K Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1000
T = 25°C
J
T = 125°C
J
ST1200C..K Series
100
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
2
2.5
3
0.1
Steady State Value
= 0.042 K/W
R
thJ-hs
(Single Side Cooled)
R
= 0.021 K/W
thJ-hs
(Double Side Cooled)
0.01 (DC Operation)
ST1200C..K Series
1
0.001
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Revision: 09-Jan-15
Document Number: 94394
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(1)
(3)
(2)
VGD
IGD
Device: ST1200C..K Series Frequency Limited by PG(AV)
0.1 1 10 100
0.1
0.001
0.01
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- ST 120
0
C
20
K
1
-
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
-
-
-
-
Vishay Semiconductors product
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
K = PUK case A-24 (K-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
9
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95081
Revision: 09-Jan-15
Document Number: 94394
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
A-24 (K-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
1 (0.04) MIN.
2 places
47.5 (1.87) DIA. MAX.
2 places
Pin receptable
AMP. 60598-1
27.5 (1.08) MAX.
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95081
Revision: 02-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
Document Number: 91000
1
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Vishay:
ST1200C12K0P ST1200C12K1 ST1200C14K0P ST1200C16K0P ST1200C16K1 ST1200C16K1L ST1200C18K0L
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