ST300C08C2 [VISHAY]

Silicon Controlled Rectifier, 650000mA I(T), 800V V(DRM);
ST300C08C2
型号: ST300C08C2
厂家: VISHAY    VISHAY
描述:

Silicon Controlled Rectifier, 650000mA I(T), 800V V(DRM)

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Bulletin I25157 rev. C 04/00  
ST300C..C SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
650A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AB (E-PUK)  
TypicalApplications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AB (E-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST300C..C  
Units  
650  
55  
A
°C  
@ T  
hs  
IT(RMS)  
1290  
25  
A
@ T  
°C  
hs  
ITSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
8000  
8380  
320  
292  
A
A
I2t  
KA2s  
KA2s  
VDRM/VRRM  
400 to 2000  
100  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
Document Number: 93729  
www.vishay.com  
1
ST300C..C Series  
Bulletin I25157 rev. C 04/00  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = TJ max  
mA  
Type number  
peak and off-state voltage  
repetitive peak voltage  
V
V
04  
08  
12  
16  
18  
20  
400  
500  
800  
900  
1200  
1600  
1800  
2000  
1300  
1700  
1900  
2100  
ST300C..C  
50  
On-state Conduction  
Parameter  
ST300C..C  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
650 (320)  
55 (75)  
1290  
A
180° conduction, half sine wave  
°C  
double side (single side) cooled  
IT(RMS) Max. RMS on-state current  
DC @ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
ITSM  
Max. peak, one-cycle  
8000  
8380  
6730  
7040  
320  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
292  
KA2s  
226  
207  
I2t  
Maximum I2t for fusing  
3200  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
0.97  
0.98  
0.74  
0.73  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
slope resistance  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
VTM  
IH  
Max. on-state voltage  
2.18  
600  
V
I = 1635A, TJ = TJ max, t = 10ms sine pulse  
pk p  
Maximum holding current  
Typical latching current  
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
1000  
Document Number: 93729  
www.vishay.com  
2
ST300C..C Series  
Bulletin I25157 rev. C 04/00  
Switching  
Parameter  
ST300C..C  
1000  
Units Conditions  
A/µs  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
T
J = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.0  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 300A, TJ = TJ max, di/dt = 40A/µs, VR = 50V  
t
Typical turn-off time  
100  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
Blocking  
Parameter  
ST300C..C  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max, linear to 80% rated VDRM  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
50  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST300C..C  
Units Conditions  
PGM  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
200  
MAX.  
-
TJ = - 40°C  
IGT  
DC gate current required  
to trigger  
100  
50  
200  
mA TJ = 25°C  
TJ = 125°C  
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
-
-
2.5  
1.8  
1.1  
TJ = - 40°C  
VGT  
DC gate voltage required  
to trigger  
3.0  
-
V
TJ = 25°C  
TJ = 125°C  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10.0  
0.25  
mA  
V
TJ = TJ max  
VGD  
Document Number: 93729  
www.vishay.com  
3
ST300C..C Series  
Bulletin I25157 rev. C 04/00  
Thermal and Mechanical Specification  
Parameter  
ST300C..C  
Units Conditions  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 125  
-40 to 150  
°C  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.09  
0.04  
DC operation single side cooled  
K/W  
K/W  
DC operation double side cooled  
RthC-hs Max. thermal resistance,  
case to heatsink  
0.02  
0.01  
9800  
(1000)  
83  
DC operation single side cooled  
DC operation double side cooled  
F
Mounting force, 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AB (E-PUK)  
See Outline Table  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
K/W  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.010  
0.012  
0.015  
0.022  
0.036  
0.011  
0.012  
0.015  
0.022  
0.036  
0.007  
0.012  
0.016  
0.023  
0.036  
0.007  
0.013  
0.017  
0.023  
0.037  
60°  
30°  
Ordering Information Table  
Device Code  
ST 30  
0
C
20  
C
1
1
2
5
6
7
8
3
4
3210-C==TVECChsoesylntreraavinsgemteroiitacerclroPpgduarekrat:dnCeuomdebexr100 = V  
45  
RRM768-(Se0Cer=V=itioEcPlaytualekgdleeCvt/aRdtesta:remtiNnTingoOanT-le2sa0b=(0GleA5a)0Bte0(VEa/n-µPdsUeAcKu)(xSiltianrydaCradthvoadlueeU) nsoldered Leads)  
1 = Fast-on terLminals=(1G0a0t0eVa/nµdseAcu(xSilpiaercyiaClastehloedcetioUnn) soldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Document Number: 93729  
www.vishay.com  
4
ST300C..C Series  
Bulletin I25157 rev. C 04/00  
Outline Table  
ANODE TO GATE  
CREEPAGE DISTANCE: 11.18 (0.44) MIN.  
STRIKE DISTANCE: 7.62 (0.30) MIN.  
25.3 (0.99)  
DIA. MAX.  
0.3 (0.01) MIN.  
14.1 / 15.1  
(0.56 / 0.59)  
0.3 (0.01) MIN.  
25.3 (0.99)  
GATE TERM. FOR  
1.47 (0.06) DIA.  
PIN RECEPTACLE  
DIA. MAX.  
40.5 (1.59) DIA. MAX.  
2 HOLES 3.56 (0.14) x  
1.83 (0.07) MIN. DEEP  
6.5 (0.26)  
4.75 (0.19)  
Case Style TO-200AB (E-PUK)  
All dimensions in millimeters (inches)  
Quote between upper and lower  
pole pieces has to be considered  
after application of Mounting Force  
(see Thermal and Mechanical  
Specification)  
25° 5°  
42 (1.65) MAX.  
28 (1.10)  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
ST300C..C Series  
(Single Side Cooled)  
ST300C..C Series  
(Single Side Cooled)  
R
(DC) = 0.09 K/W  
R
(DC) = 0.09 K/W  
thJ-hs  
thJ-hs  
Conduction Angle  
80  
Conduction Period  
80  
70  
70  
60  
30˚  
60  
60˚  
30˚  
50  
90˚  
120˚  
50  
60˚  
40  
90˚  
120˚  
180˚  
40  
30  
180˚  
DC  
30  
20  
0
0
100  
200  
300  
400  
500  
200  
400  
600  
800  
AverageOn-stateCurrent(A)  
AverageOn-stateCurrent(A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
Document Number: 93729  
www.vishay.com  
5
ST300C..C Series  
Bulletin I25157 rev. C 04/00  
130  
130  
120  
110  
100  
90  
ST300C..C Series  
(Double Side Cooled)  
ST300C..C Series  
(Double Side Cooled)  
120  
110  
100  
90  
80  
70  
R
(DC) = 0.04 K/W  
R
(DC) = 0.04 K/W  
thJ-hs  
thJ-hs  
Conduction Period  
80  
Conduction Angle  
30˚  
70  
60  
50  
40  
30  
60˚  
60  
90˚  
30˚  
50  
60˚  
90˚  
120˚  
120˚  
40  
180˚  
30  
20  
10  
180˚  
DC  
20  
0
200  
400  
600  
800 1000  
0
200 400 600 800 1000 1200 1400  
AverageOn-stateCurrent(A)  
AverageOn-stateCurrent(A)  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1800  
1600  
1400  
1200  
1000  
800  
DC  
180˚  
120˚  
90˚  
60˚  
180˚  
120˚  
90˚  
60˚  
30˚  
RMS Limit  
30˚  
RMS Limit  
Conduction Period  
ST300C..C Series  
600  
Conduction Angle  
400  
ST300C..C Series  
200  
T
= 125˚C  
T
= 125˚C  
J
J
0
0
200 400 600 800 1000 1200  
AverageOn-stateCurrent(A)  
0
100 200 300 400 500 600 700  
AverageOn-stateCurrent(A)  
Fig. 5- On-state Power Loss Characteristics  
Fig. 6- On-state Power Loss Characteristics  
7500  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
8000  
7500  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
Maximum Non Repetitive Surge Current  
Versus Pulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
At Any Rated Load Condition And With  
Rated V  
Applied Following Surge.  
RRM  
Initial T = 125˚C  
J
Initial T = 125˚C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
J
No Voltage Reapplied  
Rated V  
Reapplied  
RRM  
ST300C..C Series  
3500 ST300C..C Series  
3000  
0.01  
1
10  
100  
0.1  
PulseTrainDuration(s)  
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Document Number: 93729  
www.vishay.com  
6
ST300C..C Series  
Bulletin I25157 rev. C 04/00  
10000  
1000  
100  
T = 25˚C  
J
T = 125˚C  
J
ST300C..C Series  
0
1
2
3
4
5
6
7
8
9
InstantaneousOn-stateVoltage(V)  
Fig. 9 - On-state Voltage Drop Characteristics  
0.1  
0.01  
Steady State Value  
= 0.09 K/W  
R
thJ-hs  
(Single Side Cooled)  
R
= 0.04 K/W  
thJ-hs  
(Double Side Cooled)  
(DC Operation)  
ST300C..C Series  
0.001  
0.001  
0.01  
0.1  
1
10  
SquareWavePulseDuration(s)  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
100  
10  
1
Rectangular gate pulse  
(1) PGM = 10W, tp = 4ms  
a) Recommended load line for  
rated di/dt : 20V, 10ohms; tr<=1 µs  
b) Recommended load line for  
<=30% rated di/dt : 10V, 10ohms  
tr<=1 µs  
(2) PGM = 20W, tp = 2ms  
(3) PGM = 40W, tp = 1ms  
(4) PGM = 60W, tp = 0.66ms  
(a)  
(b)  
(3)  
(1) (2)  
(4)  
VGD  
IGD  
Device: ST300C..C Series  
Frequency Limited by PG(AV)  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
InstantaneousGateCurrent(A)  
Fig. 11 - Gate Characteristics  
Document Number: 93729  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Notice  
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of  
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the  
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or  
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 99901  
Revision: 08-Mar-07  
www.vishay.com  
1

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