ST300S04M1PBF [VISHAY]
Silicon Controlled Rectifier, 470A I(T)RMS, 300000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN;
| 型号： | ST300S04M1PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 470A I(T)RMS, 300000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN 栅 栅极 |
| 文件： | 总8页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
RoHS
COMPLIANT
• Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
• Designed and qualified for industrial level
TO-209AE (TO-118)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
• Controlled DC power supplies
• AC controllers
IT(AV)
300 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
300
UNITS
A
IT(AV)
TC
75
°C
IT(RMS)
470
50 Hz
60 Hz
50 Hz
60 Hz
8000
A
ITSM
8380
320
I2t
kA2s
292
V
DRM/VRRM
400 to 2000
100
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM
I
DRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
12
16
18
20
400
800
500
900
1200
1600
1800
2000
1300
1700
1900
2100
ST300S
50
Document Number: 94406
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine wave
300
75
A
Maximum average on-state current
at case temperature
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 64 °C case temperature
470
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
8000
8380
6730
7040
320
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
292
Maximum I2t for fusing
I2t
kA2s
226
100 % VRRM
reapplied
207
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
3200
0.97
0.98
0.74
0.73
1.66
600
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
V
rt2
VTM
IH
Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse
Maximum holding current
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dIdt
1000
1.0
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
Typical turn-off time
td
tq
µs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
100
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
30
V/µs
mA
Maximum peak reverse and
off-state leakage current
IRRM
,
IDRM
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
Revision: 11-Aug-08
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
200
100
50
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
200
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
-
-
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
VGT
3
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.10
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
°C
TStg
RthJC
RthCS
DC operation
K/W
Mounting surface, smooth, flat and greased
0.03
48.5
(425)
N · m
(lbf · in)
Mounting torque, 10 %
Non-lubricated threads
Approximate weight
Case style
535
g
See dimensions - link at the end of datasheet
TO-209AE (TO-118)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94406
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
Vishay High Power Products
130
130
ST300S Se r ie s
ST300S Se rie s
R
(DC) = 0.10 K/W
R
(DC) = 0.10 K/W
thJC
thJC
120
110
100
90
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
90°
80
120°
30°
60°
180°
80
90°
120°
70
180°
300
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
DC
70
60
0
50 100 150 200 250 300 350
Average On-state Current (A)
0
100
200
400
500
Fig. 1 - Current Ratings Characteristics
480
440
180°
120°
400
360
320
280
240
200
160
120
80
90°
60°
30°
0
.
2
K
RM S Lim it
/
W
0
.
3
K
/
W
0
.
4
K
/
W
Conduction Angle
ST300SSeries
T = 125°C
40
J
0
0
40 80 120 160 200 240 280 3
2
2
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
650
600
550
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
th
S
A
0
.
0
8
60°
K
/
W
0
30°
.
1
2
K
/
W
0
.
2
RM S Lim it
K
/
W
Conduction Period
ST300SSeries
T = 125°C
J
0
0
100
200
300
400
5
0
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
Revision: 11-Aug-08
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
Vishay High Power Products
8500
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST300S Se r ie s
ST300SSeries
0.01
0.1
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
1000
T = 25°C
J
T = 125° C
J
ST3 00S Se r ie s
100
0
1
2
3
4
5
6
7
8
9
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
0.1
Steady State Value
= 0. 10 K/ W
R
thJC
(DC Operation)
0.01
0.001
ST3 00S Se r ie s
0.001
0.01
0.1
Sq u a re Wa v e Pu lse D u r a t io n ( s)
1
10
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94406
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
Vishay High Power Products
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Fre q ue nc y Lim it e d b y PG ( AV)
Device: ST300SSeries
0.1
0.1
0.001
0.01
1
10
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
30
0
S
20
P
0
-
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
S = Compression bonding stud
Voltage code x 100 = VRRM (see Voltage Ratings table)
P = Stud base 3/4" 16UNF-2A threads
M = Stud base metric threads (M24 x 1.5)
7
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 = Threaded top terminal 3/8" 24UNF-2A
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
8
9
-
-
Critical dV/dt:
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95084
Dimensions
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-209AE (TO-118)
DIMENSIONS - TO-209AE (TO-118) in millimeters (inches)
Ceramic housing
22 (0.87) MAX.
4.5 (0.18) MAX.
4.ꢀ (0.17) DIA.
White gate
Flexible leads
10.5 (0.41)
NOM.
Red silicon rubber
C.S. 50 mm2
Red cathode
(0.078 s.i.)
ꢀ8 (1.50)
MAX. DIA.
White shrink
Red shrink
Fast-on terminals
AMP. 280000-1
REF-250
SW 45
ꢀ/4"16 UNF-2A (1)
49 (1.92) MAX.
Note
(1)
For metric device: M24 x 1.5 - length screw 21 (0.83) maximum
DIMENSIONS - TO-209AE (TO-118) WITH TOP THREAD TERMINAL 3/8" in millimeters (inches)
Ceramic housing
17 (0.67) DIA.
ꢀ/8"-24UNF-2A
ꢀ8 (1.5) DIA. MAX.
SW 45
ꢀ/4"-16UNF-2A (1)
Note
(1)
For metric device: M24 x 1.5 - length screw 21 (0.83) maximum
Document Number: 95084
Revision: 02-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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