ST303C04CCK0P [VISHAY]
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3;
| 型号： | ST303C04CCK0P |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3 |
| 文件： | 总10页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST303CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(PUK Version), 620 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
RoHS
COMPLIANT
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
TO-200AB (E-PUK)
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Inverters
PRODUCT SUMMARY
IT(AV)
620 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
620
UNITS
A
°C
A
IT(AV)
Ths
55
1180
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
7950
A
8320
316
kA2s
289
V
DRM/VRRM
400 to 1200
10 to 30
- 40 to 125
V
tq
Range
µs
°C
TJ
Note
• tq = 10 to 20 µs for 400 to 800 V devices
tq = 15 to 30 µs for 1000 to 1200 V devices
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE
V
DRM/VRRM, MAXIMUM
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
TYPE NUMBER
REPETITIVE PEAK VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
CODE
V
mA
04
08
10
12
400
800
500
900
ST303C..C
50
1000
1200
1100
1300
Document Number: 94373
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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1
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
6930
180° el
180° el
2070
50 Hz
1314
1260
900
1130
1040
700
1940
1880
1590
710
6270
2960
1540
560
400 Hz
2190
1900
910
3440
1850
740
A
V
1000 Hz
2500 Hz
340
230
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/µs
°C
40
55
40
55
40
55
10/0.47
10/0.47
10/0.47
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
VALUES
UNITS
620 (230)
55 (85)
1180
7950
8320
6690
7000
316
A
Maximum average on-state current
at heatsink temperature
°C
Maximum RMS on-state current
IT(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
289
Maximum I2t for fusing
I2t
kA2s
224
100 % VRRM
reapplied
204
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
3160
klA2√s
ITM = 1255 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
2.16
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.44
1.48
0.57
0.56
600
VT(TO)2
rt1
rt2
IH
IL
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
TJ = 25 °C, IT > 30 A
mA
Typical latching current
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
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Document Number: 94373
Revision: 25-Jul-08
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned on current
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
dI/dt
td
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
0.83
µs
TJ = TJ maximum,
minimum
maximum
10
30
Maximum turn-off time (1)
Note
tq
I
TM = 550 A, commutating dI/dt = 40 A/µs
R = 50 V, tp = 500 µs, dV/dt: See table in device code
V
(1)
tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.09
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.04
K/W
0.020
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.010
9800
(1000)
N
(kg)
Approximate weight
Case style
83
g
See dimensions - link at the end of datasheet
TO-200AB (E-PUK)
Document Number: 94373
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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3
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.010
0.012
0.015
0.022
0.036
0.010
0.012
0.015
0.022
0.036
0.007
0.012
0.016
0.023
0.036
0.007
0.013
0.017
0.023
0.037
TJ = TJ max.
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
ST303C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.09 K/W
ST303C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.04 K/W
Ø
Ø
Conduction angle
80
Conduction angle
70
80
60
70
50
180°
180°
60
40
30°
60°
90°
50
60°
30
30°
90°
120°
120°
20
40
0
50 100 150 200 250 300 350 400
0
100 200 300 400 500 600 700 800
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
ST303C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.09 K/W
ST303C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.04 K/W
Ø
Ø
80
80
Conduction period
Conduction period
70
70
60
60
50
50
DC
60°
DC
90°
40
40
180°
30°
180°
30
30
90°
60°
30°
200
120°
120°
20
20
1000
0
100
200
300
400
500
600
700
0
400
600
800
1200
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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Document Number: 94373
Revision: 25-Jul-08
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
2000
1800
1600
1400
1200
1000
800
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial TJ = 125 °C
180°
120°
90°
60°
30°
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
600
Conduction angle
400
ST303C..C Series
TJ = 125 °C
200
ST303C..C Series
0
0
100 200 300 400 500 600 700 800
0.01
0.1
1
Average On-State Current (A)
Pulse Train Duration (s)
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
1000
100
2800
2400
2000
1600
1200
800
DC
180°
120°
90°
60°
30°
TJ = 25 °C
RMS limit
TJ = 125 °C
Ø
Conduction period
ST303C..C Series
400
ST303C..C Series
TJ = 125 °C
0
0
200
400
600
800
1000 1200
0
1
2
3
4
5
6
7
8
Average On-State Current (A)
Instantaneous On-State Voltage (V)
Fig. 6 - On-State Power Loss Characteristics
Fig. 9 - On-State Voltage Drop Characteristics
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
At any rated load condition and with
rated VRRM applied following surge
ST303C..C Series
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.1
Steady state value
RthJ-hs = 0.09 K/W
(Single side cooled)
0.01
R
thJ-hs = 0.04 K/W
(Double side cooled)
(DC operation)
ST303C..C Series
0.001
0.001
1
10
100
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94373
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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5
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
180
160
140
120
100
80
320
ITM = 500 A
ITM = 300 A
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
300
I
I
TM = 200 A
TM = 100 A
280
260
240
220
200
180
160
140
120
100
80
ITM = 50 A
ST303C..C Series
TJ = 125 °C
60
ST303C..C Series
TJ = 125 °C
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
10 000
10 000
50 Hz
200
500
50 Hz
100
200
400
100
400
500
1000
1500
2000
2500
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
1000
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
1000
1000
1500
2000
2500
3000
ST303C..C Series
Sinusoidal pulse
TC = 55 °C
ST303C..C Series
Sinusoidal pulse
TC = 40 °C
3000
tp
tp
100
100
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
50 Hz
100
200
200
400
50 Hz
100
500
500
1000
400
1000
1000
1500
1500
2000
2500
3000
2000
2500
ST303C..C Series
Trapezoidal pulse
TC = 55 °C
ST303C..C Series
Trapezoidal pulse
TC = 40 °C
tp
tp
3000
100
dI/dt = 50 A/µs
dI/dt = 50 A/µs
100
10
100
1000
10 000
10
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
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Document Number: 94373
Revision: 25-Jul-08
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
10 000
10 000
1000
100
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
50 Hz
50 Hz
200
500
100
400
100
200
400
500
1000
1000
1000
1500
2000
1500
2000
ST303C..C Series
Trapezoidal pulse
TC = 55 °C
ST303C..C Series
Trapezoidal pulse
TC = 40 °C
2500
2500
3000
tp
tp
dI/dt = 100 A/µs
3000
dI/dt = 100 A/µs
100
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
10 000
1000
100
100 000
ST303C..C Series
Rectangular pulse
dI/dt = 50 A/µs
tp
20 joules per pulse
10 000
1000
100
20 joules per pulse
10
3
1
5
5
2
10
3
2
0.5
1
0.4
0.5
ST303C..C Series
Sinusoidal pulse
0.4
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
10
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST303C..C Series
1
Frequency limited by PG(AV)
10
0.1
0.001
0.01
0.1
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94373
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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7
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST
30
3
C
12
C
H
K
1
-
P
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn-off
C = Ceramic PUK
Voltage code x 100 = VRRM
(see Voltage Ratings table)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
6
7
8
9
-
-
-
-
C = PUK case TO-200AB (E-PUK)
10
12
15
20
CN DN EN FN* HN
CM DM EM FM HM
CL DL EL FL* HL
CK DK EK FK* HK
tq (µs)
Reapplied dV/dt code (for tq test condition)
tq code
up to 800 V
0 = Eyelet terminals
(gate and aux. cathode unsoldered leads)
15
18
20
25
30
CL
-
-
-
-
tq (µs)
CP DP
-
-
-
CK DK EK FK* HK
CJ DJ EJ FJ* HJ
only for
1000/1200 V
1 = Fast-on terminals
-
DH EH FH HH
(gate and aux. cathode unsoldered leads)
* Standard part number.
All other types available only on request.
2 = Eyelet terminals
(gate and aux. cathode soldered leads)
3 = Fast-on terminals
(gate and aux. cathode soldered leads)
-
-
Critical dV/dt:
None = 500 V/µs (standard value)
10
11
L = 1000 V/µs (special selection)
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95075
Dimensions
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94373
Revision: 25-Jul-08
Outline Dimensions
Vishay Semiconductors
TO-200AB (E-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1/15.1
(0.56/0.59)
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
40.5 (1.59) DIA. MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95075
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
ST303C04CCL1LP
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VISHAY
ST303C04CCL3LP
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3
VISHAY
ST303C04CCL3P
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3
VISHAY
ST303C04CCM0P
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3
VISHAY
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