ST650C22L0PBF [VISHAY]
Silicon Controlled Rectifier, 1857A I(T)RMS, 790000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, TO-200AC, LEAD FREE, BPUK-2;
| 型号： | ST650C22L0PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 1857A I(T)RMS, 790000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, TO-200AC, LEAD FREE, BPUK-2 栅 栅极 |
| 文件： | 总8页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST650C..L Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 790 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
RoHS
COMPLIANT
• International standard case TO-200AC (B-PUK)
• Lead (Pb)-free
TO-200AC (B-PUK)
TYPICAL APPLICATIONS
• DC motor control
PRODUCT SUMMARY
• Controlled DC power supplies
• AC controllers
IT(AV)
790 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
790
UNITS
A
°C
A
IT(AV)
Ths
55
1557
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
10 100
10 700
510
A
kA2s
475
V
DRM/VRRM
2000 to 2400
200
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM,MAXIMUMREPETITIVE
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
V
mA
20
22
2000
2200
2100
2300
ST650C..L
80
24
2400
2500
Document Number: 93738
Revision: 13-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST650C..L Series
Phase Control Thyristors
(Hockey PUK Version),
790 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
790 (324)
55 (85)
1857
10 100
10 700
8600
UNITS
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
9150
510
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
475
Maximum I2t for fusing
I2t
kA2s
370
100 % VRRM
reapplied
347
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
5100
1.04
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
1.13
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.61
mΩ
High level value of on-state
slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.35
Maximum on-state voltage
Maximum holding current
Typical latching current
VTM
IH
Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse
2.07
600
V
TJ = 25 °C, anode supply 12 V resistive load
mA
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
td
tq
1.0
µs
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs
VR = 50, dV/dt = 20 V/µs, Gate 0 V 100 Ω, tp = 500 µs
Maximum turn-off time
200
BLOCKING
PARAMETER
SYMBOL
dV/dt
IRRM
IDRM
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
TJ = TJ maximum linear to 80 % rated VDRM
500
V/µs
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
80
mA
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93738
Revision: 13-Aug-08
ST650C..L Series
Phase Control Thyristors
(Hockey PUK Version), 790 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.073
UNITS
Maximum operating temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.031
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.006
14 700
(1500)
N
(kg)
Approximate weight
Case style
255
g
See dimensions - link at the end of datasheet TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93738
Revision: 13-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST650C..L Series
Phase Control Thyristors
(Hockey PUK Version),
790 A
Vishay High Power Products
1 30
1 30
S T 650 C ..L S erie s
ST 650C ..L Se rie s
1 20
1 10
1 00
90
(D ou b le S id e C oole d )
(Sin g le Sid e C oo le d )
1 20
R
(D C ) = 0.031 K /W
R
(D C ) = 0 .07 3 K /W
th J-hs
th J-hs
1 10
1 00
90
C onduction An gle
Cond uction Period
80
70
60
30°
80
50
60 °
9 0°
120°
9 0°
40
70
6 0°
120°
D C
30
30°
180 °
180°
60
20
0
5 0
1 00 1 50 20 0 2 5 0 3 0 0 35 0 4 00
0
2 00
4 00
60 0
80 0 10 0 0 1 2 00 1 40 0
Av era g e O n -s ta te C u rren t (A )
A ve ra g e O n -sta te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
13 0
20 0 0
17 5 0
15 0 0
12 5 0
10 0 0
7 5 0
5 0 0
2 5 0
0
ST 650C ..L Se ries
1 80°
1 20°
90°
12 0
11 0
10 0
9 0
(D o u ble S id e C oo led )
R
(D C ) = 0.0 31 K /W
thJ-h s
60°
30°
R M S Lim it
C onduction Angle
1 80°
8 0
7 0
6 0
C ond uction Angle
S T 650 C ..L S erie s
5 0
120°
90°
4 0
60 °
T
= 12 5°C
J
3 0
30°
2 0
0
10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0
Av era g e O n - sta te C u rre n t (A)
0
1 0 0 2 00 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00
Ave ra g e O n -sta te C u rren t (A )
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
13 0
12 0
11 0
10 0
9 0
2 40 0
ST 650C ..L Se ries
D C
2 20 0
(D o u ble S id e C oo led )
1 80°
2 00 0
R
(D C ) = 0.0 31 K /W
1 20°
thJ-h s
90°
60°
30°
1 80 0
1 60 0
1 40 0
1 20 0
1 00 0
8 00
C onduction Angle
1 80°
8 0
R M S Lim it
7 0
6 0
C ondu ction P eriod
S T 650C ..L S eries
5 0
120°
90°
6 00
4 0
4 00
T
= 12 5°C
60 °
J
3 0
30°
2 00
2 0
0
0
20 0
4 00
6 0 0
80 0 10 0 0 1 20 0 1 4 00
0
10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0
Av era g e O n - sta te C u rre n t (A)
A ve ra g e O n -sta te C urre n t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93738
Revision: 13-Aug-08
ST650C..L Series
Phase Control Thyristors
(Hockey PUK Version), 790 A
Vishay High Power Products
1 2 00 0
10 0 00
9 00 0
8 00 0
7 00 0
6 00 0
5 00 0
4 00 0
M a x im u m N o n R e p etitive S u rg e C u rre n t
V e rsu s P u lse T ra in D u ra tion . C o n trol
O f C on d u c tio n M a y N ot B e M a in ta in ed .
A t Any R ated Loa d C ond itio n An d W ith
R ated Ap plied Follow in g Su rge .
V
RR M
1 1 00 0
1 0 00 0
90 0 0
80 0 0
70 0 0
60 0 0
50 0 0
40 0 0
In itia l T
= 12 5°C
J
@
60 H z 0 .00 83
s
s
In itia l
No V olta g e R ea p p lie d
R a te d Re a p p lied
T
= 125 °C
J
@
50 H z 0 .01 00
V
R RM
S T6 50C ..L S eries
ST 650 C ..L S er ie s
1
1 0
10 0
0 .0 1
0. 1
P u lse T ra in D u ra tion (s)
1
Nu mber O f Equ al Amp litud e H alf C ycle C urren t Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T
= 25°C
J
1000
T
= 125°C
J
ST650C..L Series
100
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0. 1
Stea d y Sta te V a lu e
0.073 K/W
(Sin gle Sid e C oo le d)
0.031 K/W
R
=
thJ-hs
R
=
thJ-hs
(Do u ble Sid e C oo led )
(DC O p era tio n )
0 .0 1
ST 650C ..L Se ries
0 .00 1
0 .00 1
0.0 1
0 .1
S q ua re W a ve P u lse Du ra tion (s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 93738
Revision: 13-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST650C..L Series
Phase Control Thyristors
(Hockey PUK Version),
790 A
Vishay High Power Products
1 0 0
Re cta n g u la r g a te p ulse
(1) PG M
(2) PG M
(3) PG M
(4) PG M
=
=
=
=
10W , tp
20W , tp
40W , tp
60W , tp
=
=
=
=
4m s
2m s
1m s
a ) R e com m e n d ed loa d lin e f or
ra ted d i/dt : 20V , 10oh m s; tr<= 1 µ s
b ) Re co m m e n d ed loa d lin e for
< = 30% ra te d d i/d t : 1 0V , 10o h m s
tr< = 1 µ s
0.66m s
1 0
1
(a )
(b )
(1)
(2)
(3) (4)
V G D
IG D
F req u en c y Lim ite d b y P G (AV )
10
ST 6 50C ..L Se rie s
0 .1
0 .1
0 .0 01
0 .01
1
1 00
In sta n tan eo us G a te C u rren t (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
65
0
C
24
L
1
-
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
L = PUK case TO-200AC (B-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8
-
Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95076
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93738
Revision: 13-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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