SUB75N03-07-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;型号: | SUB75N03-07-E3 |
厂家: | VISHAY |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
文件: | 总5页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUP/SUB75N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.007 @ V = 10 V
75
GS
30
0.01 @ V = 4.5 V
GS
70
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
Top View
S
N-Channel MOSFET
SUB75N03-07
SUP75N03-07
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
a
T
C
= 25_C
75
Continuous Drain Current (T = 175_C)
I
D
J
T
C
= 100_C
64
240
75
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
280
mJ
W
AR
c
Power Dissipation
T
C
= 25_C
P
120
D
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
C/W
Free Air (TO-220AB)
62.5
1.25
R
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB75N03-07
Vishay Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
Gate Threshold Voltage
Gate-Body Leakage
V
2
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 30 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
V
V
= 30 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 30 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
120
A
D(on)
V
= 10 V, I = 30 A
D
0.006
0.007
0.011
0.015
0.01
GS
V
V
= 10 V, I = 30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
D
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
20
S
D
Dynamicb
Input Capacitance
C
5600
1100
450
70
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
130
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 15 V, V = 10 V, I = 75 A
18
GS
D
c
Gate-Drain Charge
10
c
Turn-On Delay Time
t
18
30
20
d(on)
c
Rise Time
t
r
12
V
DD
= 15 V, R = 0.2 W
L
ns
c
I
D
] 75 A, V
= 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
60
120
40
d(off)
c
Fall Time
t
f
22
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
75
s
A
Pulsed Current
I
200
1.5
100
SM
a
Forward Voltage
V
I
= 75 A, V = 0 V
1.2
55
V
SD
F
GS
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
100
80
60
40
20
0
V
GS
= 10, 9, 8, 7, 6 V
5 V
4 V
T
= 125_C
C
25_C
3 V
8
–55_C
0
0
2
4
6
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.015
0.012
0.009
0.006
0.003
0
T
C
= –55_C
25_C
V
= 4.5 V
= 10 V
GS
125_C
V
GS
0
10
V
20
30
40
50
0
20
40
60
80
100
– Gate-to-Source Voltage (V)
GS
I
D
– Drain Current (A)
Capacitance
Gate Charge
8000
6000
4000
2000
0
20
16
12
8
V
= 10 V
= 75 A
GS
C
iss
I
D
C
oss
4
C
rss
0
0
6
12
18
24
30
0
20
40
Q – Total Gate Charge (nC)
g
60
80
100
120
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
10
T = 25_C
J
1
0.1
–50 –25
0
25
50
75 100 125 150 175
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
500
80
60
40
20
0
10 ms
Limited
by r
DS(on)
100
100 ms
1 ms
10
10 ms
T
= 25_C
C
100 ms
dc
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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