SUB85N03-04P [VISHAY]
N-Channel 30-V (D-S) 175C MOSFET; N通道30 -V （D -S ） 175C MOSFET
| 型号： | SUB85N03-04P |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 文件： | 总5页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB85N03-04P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)a
a
0.0043 @ V = 10 V
85
GS
30
a
0.007 @ V = 4.5 V
GS
85
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB85N03-04P
Top View
SUP85N03-04P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
"20
a
T
= 25_C
= 100_C
85
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
85
C
A
Pulsed Drain Current
Avalanche Current
I
240
75
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
280
mJ
c
T
= 25_C (TO-220AB and TO-263)
166
C
b
Maximum Power Dissipation
P
W
D
d
T
A
= 25_C (TO-263)
3.75
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
62.5
0.9
Junction-to-Ambient
Junction-to-Case
R
thJA
R
thJC
Free Air (TO-220AB)
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71241
S-20120—Rev. B, 12-Mar-02
www.vishay.com
1
SUP/SUB85N03-04P
New Product
Vishay Siliconix
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
2
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
Gate-Body Leakage
I
"100
nA
GSS
V
DS
= 24 V, V = 0 V
1
GS
V
V
= 24 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 24 V, V = 0 V, T = 175_C
250
DS
GS
J
a
On-State Drain Current
I
V
DS
w 5 V, V = 10 V
120
A
D(on)
GS
V
= 10 V, I = 30 A
0.0035
0.0055
0.0043
0.0065
0.008
GS
D
V
V
= 10 V, I = 30 A, T = 125_C
= 10 V, I = 30 A, T = 175_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
GS
D
J
0.007
V
GS
= 4.5 V, I = 20 A
D
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
30
S
D
Dynamicb
Input Capacitance
C
C
4500
1380
615
71
iss
Output Capacitance
pF
nC
V
V
= 0 V, V = 25 V, f = 1 MHz
DS
oss
GS
Reverse Transfer Capacitance
C
rss
b
Total Gate Charge
Q
90
g
b
Gate-Source Charge
Q
Q
15
= 15 V, V = 10 V, I = 85 A
gs
gd
DS
GS
D
b
Gate-Drain Charge
16
b
Turn-On Delay Time
t
15
23
18
75
35
d(on)
b
Rise Time
t
r
12
V
= 15 V, R = 0.18 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
b
I
D
^ 85 A, V
Turn-Off Delay Time
t
50
d(off)
b
Fall Time
t
f
22
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current
I
85
S
A
Pulsed Current
I
240
SM
a
I
= 85 A, V = 0 V
GS
Forward Voltage
V
1.1
42
1.5
70
V
ns
A
F
SD
Reverse Recovery Time
t
rr
Peak Reverse Recovery Current
Reverse Recovery Charge
I
1.4
0.03
2.1
0.06
I
F
= 85 A, di/dt = 100 A/ms
RM
Q
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Document Number: 71241
S-20120—Rev. B, 12-Mar-02
www.vishay.com
2
SUP/SUB85N03-04P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
200
150
100
50
V
GS
= 10 thru 6 V
5 V
200
150
100
50
4 V
T
= 125_C
C
25_C
–55_C
2, 3 V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
180
150
120
90
0.008
0.006
0.004
0.002
0.000
T
= –55_C
C
V
GS
= 4.5 V
25_C
125_C
V
GS
= 10 V
60
30
0
0
20
40
60
80
100
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 15 V
= 85 A
DS
I
D
C
iss
C
oss
4
C
rss
0
0
6
12
18
24
30
0
20
40
Q – Total Gate Charge (nC)
g
60
80
100
120
140
V
– Drain-to-Source Voltage (V)
DS
Document Number: 71241
www.vishay.com
S-20120—Rev. B, 12-Mar-02
3
SUP/SUB85N03-04P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0.0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
10
T = 25_C
J
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V – Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
– Junction Temperature (_C)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
45
40
35
30
25
I
D
= 250 mA
100
I
AV
(A) @ T = 25_C
A
10
1
I
AV
(A) @ T = 150_C
A
0.1
–50 –25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
– Junction Temperature (_C)
J
Document Number: 71241
S-20120—Rev. B, 12-Mar-02
www.vishay.com
4
SUP/SUB85N03-04P
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
100
80
60
40
20
0
10 ms
100
10
100 ms
1 ms
Limited
by r
DS(on)
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
10
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71241
S-20120—Rev. B, 12-Mar-02
www.vishay.com
5
相关型号：
©2020 ICPDF网 联系我们和版权申明