SUD50N03-09P-T1-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | SUD50N03-09P-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总5页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-09P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
VDS (V)
rDS(on) (W)
ID (A)b
D 100% Rg Tested
APPLICATIONS
b
0.0095 @ V = 10 V
63
GS
30
b
0.014 @ V = 4.5 V
GS
52
D DC/DC Converters
D Synchronous Rectifiers
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD50N03-09P
SUD50N03-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
b
T
= 25_C
= 100_C
63
C
a
Continuous Drain Current
I
D
b
T
44.5
C
Pulsed Drain Current
I
50
10
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
S
I
35
AS
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
61
mJ
T
= 25_C
= 25_C
65.2
C
Maximum Power Dissipation
P
D
W
a
T
7.5
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
16
40
20
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.8
2.3
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
1
SUD50N03-09P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
20
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0076
0.0115
0.0095
0.015
0.014
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
2200
410
180
11
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
16
g
c
Gate-Source Charge
Q
Q
7.5
5.0
1.5
9
V
DS
= 15 V, V = 4.5 V, I = 50 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
Gate Resistance
R
0.5
2.1
15
W
g
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
80
120
35
r
V
= 15 V, R = 0.3 W
L
= 10 V, R = 2.5 W
GEN g
DD
ns
c
I
D
^ 50 A, V
Turn-Off Delay Time
t
22
d(off)
c
Fall Time
t
f
8
12
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
120
120
90
60
30
0
V
GS
= 10 thru 6 V
5 V
90
60
30
0
4 V
T
= 125_C
C
3 V
2 V
25_C
−55_C
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
2
SUD50N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
100
0.05
0.04
0.03
0.02
0.01
0.00
80
T
= −55_C
C
25_C
60
40
20
0
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
10
8
C
iss
V
D
= 15 V
DS
I
= 30 A
6
4
C
oss
2
C
rss
0
0
0
5
10
15
20
25
30
0
6
12
Q − Total Gate Charge (nC)
g
18
24
30
V
DS
− Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0.0
100
10
1
V
GS
= 10 V
I
D
= 30 A
T = 150_C
T = 25_C
J
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
3
SUD50N03-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
25
20
15
10
5
Limited
by r
DS(on)
10, 100 ms
100
10
1 ms
10 ms
100 ms
1
1 s
10 s
T
= 25_C
100 s
dc
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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