SUD50N03-10-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUD50N03-10-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-10
Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
Product Summary
VDS (V)
rDS(on) (W)
ID (A)
0.010 @ V = 10 V
"15
"12
GS
30
0.019 @ V = 4.5 V
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N03-10
S
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
30
"20
"15
"10
"100
15
DS
GS
V
T
= 25_C
A
a
Continuous Drain Current
Pulsed Drain Current
I
D
T
A
= 100_C
A
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 25_C
83
C
Maximum Power Dissipation
P
D
W
a
T
A
4
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum
Unit
a
Maximum Junction-to-Ambient
R
R
30
thJA
_C/W
Maximum Junction-to-Case
1.8
thJC
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70265.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1
SUD50N03-10
Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
D
(BR)DSS
V
V
V
= V , I = 250 mA
1.0
2.0
GS(th)
DS
GS
D
V
= 0 V, V = "20 V
GS
I
"100
1
nA
DS
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
20
A
D(on)
DS
GS
V
= 10 V, I =15 A
0.010
0.018
0.019
GS
D
b
Drain-Source On-State Resistance
r
V
= 10 V, I =15 A, T = 125_C
W
DS(on)
GS
D
J
V
= 4.5 V, I = 15 A
D
GS
b
Forward Transconductance
g
V
= 15 V, I = 15 A
S
fs
DS
D
Dynamica
Input Capacitance
C
3200
800
150
55
10
9
6000
100
iss
V
= 0 V, V = 25 V, F = 1 MHz
DS
GS
Output Capacitance
C
oss
pF
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
g
c
Gate-Source Charge
Q
V
= 15 V, V = 10 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
Q
c
Turn-On Delay Time
t
16
8
30
20
60
40
d(on)
c
Rise Time
t
r
V
= 15 V, R = 0.3 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
I
D
^ 50 A, V
c
Turn-Off Delay Time
t
33
20
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
A
V
SM
b
Diode Forward Voltage
V
t
I
= 100 A, V = 0 V
1.2
55
SD
F
GS
Source-Drain Reverse Recovery Time
I
F
= 50 A, di/dt = 100 A/ms
100
ns
rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. E, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
2
SUD50N03-10
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
200
160
120
80
100
80
60
40
20
0
V
= 10, 9, 8, 7 V
T
C
= –55_C
GS
25_C
125_C
6 V
5 V
40
4 V
2, 3 V
0
0
2
4
6
8
10
0
2
4
6
8
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Transconductance
On-Resistance vs. Drain Current
80
60
40
20
0
0.030
0.025
0.020
0.015
0.010
0.005
0
T
= –55_C
25_C
C
V
= 4.5 V
GS
125_C
V
= 10 V
GS
0
10
20
30
40
50
0
20
40
60
80
100
I
– Drain Current (A)
I
– Drain Current (A)
D
D
Capacitance
Gate Charge
5000
4000
3000
2000
1000
0
10
8
V
= 15 V
= 50 A
DS
I
D
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
10
20
– Total Gate Charge (nC)
g
30
40
50
V
– Drain-to-Source Voltage (V)
Q
DS
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S-57253—Rev. E, 24-Feb-98
S
Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
Siliconix was formerly a division of TEMIC Semiconductors
3
SUD50N03-10
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
2.0
1.6
1.2
0.8
0.4
0
100
10
1
V
= 10 V
= 50 A
GS
I
D
T = 175_C
J
T = 25_C
J
-50 -25
0
25 50 75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
– Source-to-Drain Voltage (V)
SD
Thermal Ratings
Maximum Drain Current vs.
Ambient Temperature
Safe Operating Area
500
100
20
16
12
8
Limited
by r
DS(on)
10, 100 ms
1 ms
10
1
10 ms
100 ms
T
= 25_C
4
A
Single Pulse
1 s
dc
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (_C)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SUD50N03-10BP-T4-E3
Power Field-Effect Transistor, 20A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
VISHAY
SUD50N03-10CP-E3
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
VISHAY
SUD50N03-10CP-T4
Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
VISHAY
SUD50N03-10CP-T4-E3
Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
VISHAY
©2020 ICPDF网 联系我们和版权申明