SUD50N03-10P [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | SUD50N03-10P |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-10P
Siliconix
N-Ch 30-V (D-S), 175_C, MOSFET PWM Optimized
New Product
PRODUCT SUMMARY
V
(V)
R
W()
I
D
(A)
(BR)DSS
DS(ON)
A
0.010 @ V = 10 V
"50
GS
30
0.015 @ V = 4.5 V
GS
"45
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N03-10P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
"30
"20
DS
V
V
GS
A
T
= 25_C
"50
C
Continuous Drain Current (T = 175_C)
I
J
D
T
C
= 100_C
"40
"180
"50
A
Pulsed Drain Current
I
DM
A
Continuous Source Current (Diode Conduction)
I
S
C
T
= 25_C
= 25_C
65
C
Maximum Power Dissipation
P
D
W
B
5
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
B
Maximum Junction-to-Ambient
R
R
30
thJA
_C/W
Maximum Junction-to-Case
2.3
thJC
Notes:
A. Package limited.
B. Surface mounted on FR4 Board, t v 10 sec.
C. See SOA curve for voltage derating.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70822.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors
1
SUD50N03-10P
Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
30
1
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
V
2
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
nA
GS
GSS
V
DS
= 24 V, V = 0 V
1
GS
Zero Gate Voltage Drain Current
I
V
V
= 24 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 24 V, V = 0 V, T = 175_C
150
DS
GS
J
B
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
50
A
D(on)
V
= 10 V, I = 25 A
D
0.0075
0.010
0.016
0.019
0.015
GS
V
V
= 10 V, I = 15 A, T = 125_C
D J
GS
B
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 15 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 15 A
0.011
40
D
B
Forward Transconductance
g
fs
V
= 15 V, I = 15 A
20
S
DS
D
A
DYNAMIC
Input Capacitance
C
2700
680
360
45
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
C
Total Gate Charge
Q
70
g
C
Gate-Source Charge
Q
Q
V
= 15 V, V = 10 V, I = 50 A
8.5
9.5
12
gs
gd
DS
GS
D
C
Gate-Drain Charge
C
Turn-On Delay Time
t
20
15
60
20
d(on)
C
Rise Time
t
7
r
V
DD
= 15 V, R = 0.3 W
L
ns
C
I
] 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
35
D
GEN
G
d(off)
C
Fall Time
t
12
f
A
SOURCEĆDRAIN DIODE RATINGS AND CHARACTERISTICS= (T_2C5)
C
Continuous Current
Pulsed Current
I
50
180
1.5
80
S
A
I
SM
B
Forward Voltage
V
SD
I
= 50 A, V = 0 V
1.2
40
V
F
GS
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes:
A. Guaranteed by design, not subject to production testing.
B. Pulse test; pulse width v 300 ms, duty cycle v 2%.
C. Independent of operating temperature.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-59916—Rev. A , 28-Sep-98
Siliconix was formerly a division of TEMIC Semiconductors
2
SUD50N03-10P
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
180
100
80
60
40
20
0
V
GS
= 10 thru 7 V
150
6 V
120
90
5 V
T
C
= 125_C
60
4 V
30
25_C
3 V
–55_C
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
OnĆResistance vs. Drain Current
80
60
40
20
0.030
0.025
0.020
0.015
0.010
0.005
0
T
= –55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
0
10
20
30
40
50
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
4000
3000
2000
1000
10
8
V
= 15 V
= 50 A
DS
C
iss
I
D
6
4
C
oss
2
C
rss
0
0
0
6
12
18
24
30
0
10
20
Q – Total Gate Charge (nC)
g
30
40
50
V
– Drain-to-Source Voltage (V)
DS
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors
3
SUD50N03-10P
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
OnĆResistance vs. Junction Temperature
SourceĆDrain Diode Forward Voltage
2.4
100
V
= 10 V
= 50 A
GS
I
D
2.0
1.6
1.2
0.8
0.4
0
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Thermal Ratings
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
60
50
40
30
20
10
0
10 ms
Limited
100 ms
100
10
by r
DS(on)
1 ms
T
= 25_C
C
10 ms
Single Pulse
100 ms
dc
1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, JunctionĆtoĆCase
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 30_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-59916—Rev. A , 28-Sep-98 Siliconix was formerly a division of TEMIC Semiconductors
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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