SUD50N03-12P_06 [VISHAY]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | SUD50N03-12P_06 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE Device Model SUD50N03-12P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
www.vishay.com
Document Number: 72495
S-60677Rev. B, 01-May-06
1
SPICE Device Model SUD50N03-12P
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Simulated
Data
Measured
Data
Parameter
Symbol
Test Condition
Unit
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
1.9
464
V
A
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
0.010
0.0134
0.0149
34
0.010
0.0138
1.2
Drain-Source On-State Resistancea
rDS(on)
Ω
VGS = 10 V, ID = 20 A, TJ = 125°C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Forward Transconductancea
Forward Voltagea
gfs
S
V
VSD
IS = 40 A, VGS = 0 V
0.90
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Ciss
Coss
Crss
Qg
1680
291
91
27
6
1600
285
140
28
6
V
GS = 0 V, VDS = 25 V, f = 1 MHz
pF
nC
VDS = 15 V, VGS = 10 V, ID = 50 A
Qgs
Qgd
td(on)
tr
5
5
17
13
11
13
9
15
20
12
VDD = 15 V, RL = 0.30 Ω
ns
Turn-Off Delay Timec
Fall Timec
td(off)
tf
I
D ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
Document Number: 72495
S-60677Rev. B, 01-May-06
2
SPICE Device Model SUD50N03-12P
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
www.vishay.com
Document Number: 72495
S-60677Rev. B, 01-May-06
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SUD50N04-06H-E3
TRANSISTOR 50 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
VISHAY
SUD50N04-07L-E3
TRANSISTOR 65 A, 40 V, 0.0074 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power
VISHAY
SUD50N04-08P-E3
Power Field-Effect Transistor, 14.1A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
VISHAY
SUD50N04-09-E3
TRANSISTOR 50 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power
VISHAY
©2020 ICPDF网 联系我们和版权申明