首页 |元器件品牌

SUR50N025-05P-T4-E3 [VISHAY]

N-Channel 25-V (D-S) MOSFET; N通道25 -V （D -S ）的MOSFET
SUR50N025-05P-T4-E3
型号： SUR50N025-05P-T4-E3
厂家： VISHAY    VISHAY
描述：

N-Channel 25-V (D-S) MOSFET
N通道25 -V （D -S ）的MOSFET

晶体 晶体管 开关 脉冲
文件： 总6页 (文件大小：97K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SUR50N025-05P  
New Product  
Vishay Siliconix  
N-Channel 25-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)a, e  
Qg (Typ)  
D 100% Rg Tested  
D RoHS Compliant  
APPLICATIONS  
0.0052 @ V = 10 V  
89  
80  
GS  
25  
30 nC  
0.0076 @ V = 4.5 V  
GS  
D DC/DC Conversion, Low-Side  
− Desktop PC  
− Notebook PC  
TO-252  
Reverse Lead DPAK  
D
G
Drain Connected to Tab  
G
D
S
Top View  
S
Ordering Information:  
N-Channel MOSFET  
SUR50N025-05P—E3 (Lead (Pb)-Free)  
SUR50N025-05P-T4—E3 (Lead (Pb)-Free, alternate tape orientation)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
25  
DS  
V
"20  
GS  
a, e  
T
T
= 25_C  
= 70_C  
= 25_C  
= 70_C  
89  
C
a, e  
75  
C
Continuous Drain Current (T = 175__C)  
I
J
D
b, c  
T
A
36  
b, c  
30  
T
A
A
Pulsed Drain Current  
I
100  
55  
DM  
T
C
= 25_C  
= 25_C  
Continuous Source-Drain Diode Current  
I
S
b, c  
T
A
7.7  
Avalanche Current Pulse  
I
AS  
45  
L = 0.1 mH  
Single Pulse Avalanche Energy  
E
101  
mJ  
AS  
a
T
T
= 25_C  
= 70_C  
= 25_C  
= 70_C  
83  
C
a
58  
C
Maximum Power Dissipation  
P
W
D
b, c  
T
A
11.5  
b, c  
T
A
8.0  
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
b, d  
Maximum Junction-to-Ambient  
t p 10 sec  
R
10  
13  
thJA  
thJC  
_
C/W  
Maximum Junction-to-Case  
Steady State  
R
1.5  
1.8  
Notes:  
a. Based on T = 25_C.  
C
b. Surface mounted on 1” x 1” FR4 board.  
c. t = 10 sec  
d. Maximum under steady state conditions is 90 _C/W.  
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.  
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
1
SUR50N025-05P  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
V
V
= 0 V, I = 250 mA  
25  
V
DS  
GS  
D
V
V
Temperature Coefficient  
DV /T  
J
20  
DS  
DS  
mV/_C  
I
D
= 250 mA  
Temperature Coefficient  
DV  
/T  
J
−6.0  
GS(th)  
GS(th)  
V
= V , I = 250 mA  
GS D  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
V
1.4  
50  
2.4  
"100  
1
V
DS  
GS(th)  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 25 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 25 V, V = 0 V, T = 55_C  
10  
DS  
GS  
J
a
On-State Drain Current  
I
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0042  
0.0052  
0.0076  
V
= 10 V, I = 20 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 15 A  
0.0062  
65  
GS  
DS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 15 A  
S
D
Dynamicb  
Input Capacitance  
C
C
3600  
790  
430  
63  
iss  
Output Capacitance  
V
= 12 V, V = 0 V, f = 1 MHz  
DS GS  
pF  
oss  
Reverse Transfer Capacitance  
C
rss  
V
= 12 V, V = 10 V, I = 50 A  
95  
45  
DS  
DS  
GS  
D
Total Gate Charge  
Q
g
30  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
Q
V
= 12 V, V = 4.5 V, I = 50 A  
10.5  
10.5  
1.0  
24  
gs  
GS  
D
gd  
R
f = 1 MHz  
0.5  
1.5  
36  
20  
36  
12  
17  
17  
44  
12  
W
g
t
d(on)  
t
13  
r
V
= 12 V, R = 0.24 W  
L
GEN g  
DD  
^ 50 A, V  
I
= 4.5 V, R = 1 W  
D
Turn-Off Delay Time  
Fall Time  
t
24  
d(off)  
t
7.5  
11  
f
ns  
Turn-On Delay Time  
Rise Time  
t
t
d(on)  
t
11  
r
V
= 12 V, R = 0.24 W  
L
DD  
^ 50 A, V  
I
D
= 10 V, R = 1 W  
GEN g  
Turn-Off Delay Time  
Fall Time  
29  
d(off)  
t
8
f
Drain-Source Body Diode Characteristics  
T
= 25_C  
Continuous Source-Drain Diode Current  
I
55  
100  
1.5  
51  
C
S
A
a
Pulse Diode Forward Current  
I
SM  
I
= 30 A  
Body Diode Voltage  
V
0.9  
34  
25  
17  
17  
V
S
SD  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
t
rr  
ns  
nC  
Q
38  
rr  
I
F
= 20 A, di/dt = 100 A/ms, T = 25_C  
J
t
t
a
ns  
b
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
2
SUR50N025-05P  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
100  
20  
16  
12  
8
4 V  
V
= 10 thru 5 V  
GS  
80  
60  
40  
20  
0
T
C
= 125_C  
4
25_C  
2 V  
1.2  
3 V  
−55_C  
0
1.0  
0.0  
0.4  
0.8  
1.6  
2.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
DS  
On-Resistance vs. Drain Current and Gate Voltage  
Capacitance  
0.012  
4800  
4000  
3200  
2400  
1600  
800  
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
C
iss  
V
= 4.5 V  
GS  
V
= 10 V  
GS  
C
oss  
C
rss  
0
0
20  
40  
60  
80  
100  
0
5
10  
15  
20  
25  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I
D
= 20 A  
V
= 10 V  
GS  
V
= 4.5 V  
V
= 12 V  
GS  
DS  
6
V
= 18 V  
DS  
4
2
0
0
8
16  
Q
24  
32  
40  
48  
56  
64  
−50 −25  
0
T
25  
50  
75 100 125 150 175  
− Total Gate Charge (nC)  
− Junction Temperature (_C)  
g
J
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
3
SUR50N025-05P  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
100  
I
= 20 A  
D
T = 150_C  
J
10  
1
0.1  
T = 125_C  
J
T = 25_C  
J
0.01  
T = 25_C  
J
0.001  
2
3
4
5
6
7
8
9
10  
0.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
− Source-to-Drain Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
SD  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.6  
720  
600  
0.3  
0.0  
I
D
= 250 mA  
480  
360  
240  
120  
T
A
= 25_C  
−0.3  
−0.6  
−0.9  
−1.2  
0
−50 −25  
0
25  
50  
75 100 125 150 175  
0.001  
0.01  
0.1  
1
10  
100  
1000  
T
J
− Temperature (_C)  
Time (sec)  
Safe Operating Area, Junction-to-Case  
1000  
*Limited by r  
100  
DS(on)  
10 ms  
100 ms  
10  
1
1 ms  
10 ms  
100 ms, dc  
T
= 25_C  
C
Single Pulse  
0.1  
0.1  
1
10  
100  
V
− Drain-to-Source Voltage (V)  
DS  
*V u minimum V at which r is specified  
GS  
GS  
DS(on)  
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
4
SUR50N025-05P  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Current De-Rating*  
Power De-Rating  
100  
90  
75  
60  
45  
30  
15  
0
80  
60  
40  
Package Limited  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
T
C
− Case Temperature (_C)  
T
C
− Case Temperature (_C)  
Single Pulse Avalanche Capability  
1000  
100  
10  
1
L @ I  
D
T
+
A
BV * V  
DD  
0.1  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
T
A
− Time In Avalanche (sec)  
*The power dissipation P is based on T  
= 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for  
D
J(max)  
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.  
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
5
SUR50N025-05P  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 70_C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−1  
−2  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and  
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see  
http://www.vishay.com/ppg?73379.  
Document Number: 73379  
s-50933—Rev. A, 09-May-05  
www.vishay.com  
6

相关型号：

SUR50N025-06P-T4-E3

 TRANSISTOR 32 A, 25 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TO-252, DPAK-3, FET General Purpose Power
VISHAY

SUR50N025-09BP-E3

 Power Field-Effect Transistor, 50A I(D), 25V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
VISHAY

SUR50N03-06AP-E3

 Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
VISHAY

SUR50N03-06P

 N-Channel 30-V (D-S) 175C MOSFET
VISHAY

SUR50N03-06P-T4-E3

 TRANSISTOR 27 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3, FET General Purpose Power
VISHAY

SUR50N03-09P

 N-Channel 30-V (D-S) MOSFET
VISHAY

SUR50N03-12P

 N-Channel 30-V (D-S) MOSFET
VISHAY

SUR50N03-12P-E3

 N-Channel 30-V (D-S) MOSFET
VISHAY

SUR50N03-12P-T4-E3

 N-Channel 30-V (D-S) MOSFET
VISHAY

SUR50N03-16P

 N-Channel 30-V (D-S) MOSFET
VISHAY

SUR50N03-16P-E3

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

SUR50N06-07L-E3

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY
©2020 ICPDF网 联系我们和版权申明