TCET1202 [VISHAY]
Optocoupler, Phototransistor Output (Single, Dual Channel); 光电耦合器，光电晶体管输出（单，双通道）
| 型号： | TCET1202 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output (Single, Dual Channel) |
| 文件： | 总10页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Optocoupler, Phototransistor Output (Single, Dual Channel)
Features
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• CTR offered in 5 groups
• Low temperature coefficient of CTR
• Available in single or dual channel
• Lead-free component
E
4
C
3
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
2
A
C
Agency Approvals
4 PIN
• UL1577, File No. E76222 System Code U, Double
Protection
• CSA 22.2 bulletin 5A, Double Protection
• BSI IEC60950 IEC60065
8 PIN
V
Pb
D
E
e3
C
Pb-free
15123
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• FIMKO
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
Applications
Switch-mode power supplies
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Line receiver
Computer peripheral interface
Microprocessor system interface
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Reinforced Isolation provides circuit protection
against electrical shock (Safety Class II)
Office machines (applied for reinforced isolation for mains voltage
≤
400 VRMS)
VDE 0804
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced iso-
lation):
Telecommunication apparatus and data processing
IEC 60065
• For appl. class I - IV at mains voltage ≤ 300 V
Safety for mains-operated electronic and related household appa-
ratus
• For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2, suitable for:
Description
The TCET1200/ TCET2200 consists of a phototrans-
istor optically coupled to a gallium arsenide infrared-
emitting diode in a 4-pin (single channel) or 8-pin
plastic dual inline package.
Document Number 83501
Rev. 1.5, 26-Oct-04
www.vishay.com
1
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Order Information
Part
Remarks
TCET1200
TCET1201
TCET2200
TCET1202
TCET1203
TCET1204
TCET1200G
TCET1201G
TCET1202G
TCET1203G
TCET1204G
CTR 50 - 600 %, DIP-4
CTR 40 - 80 %, DIP-4
CTR 50 - 600 %, DIP-8
CTR 63 - 125 %, DIP-4
CTR 100 - 200 %, DIP-4
CTR 160 - 320 %, DIP-4
CTR 50 - 600 %, DIP-4
CTR 40 - 80 %, DIP-4
CTR 63 - 125 %, DIP-4
CTR 100 - 200 %, DIP-4
CTR 160 - 320 %, DIP-4
G = Leadform 10.16 mm; G is not marked on the body
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6
Unit
V
Reverse voltage
Forward current
IF
IFSM
Pdiss
Tj
60
mA
A
Forward surge current
Power dissipation
Junction temperature
tp ≤ 10 µs
1.5
100
125
mW
°C
Output
Parameter
Test condition
Symbol
VCEO
Value
70
Unit
V
Collector emitter voltage
Emitter collector voltage
Collector current
VECO
IC
7
V
50
mA
mA
mW
°C
Collector peak current
Power dissipation
tp/T = 0.5, tp ≤ 10 ms
ICM
Pdiss
Tj
100
150
125
Junction temperature
Coupler
Parameter
Test condition
Symbol
VISO
Value
5000
Unit
Isolation test voltage (RMS)
VRMS
Total power dissipation
Ptot
250
mW
°C
Operating ambient temperature
range
Tamb
- 40 to + 100
Storage temperature range
Soldering temperature
Tstg
Tsld
- 55 to + 125
260
°C
°C
2 mm from case t ≤ 10 s
www.vishay.com
2
Document Number 83501
Rev. 1.5, 26-Oct-04
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 50 mA
R = 0 V, f = 1 MHz
Symbol
VF
Min
Typ.
1.25
Max
1.6
Unit
V
Forward voltage
Junction capacitance
V
Cj
50
pF
Output
Parameter
Test condition
IC = 1 mA
E = 100 µA
Symbol
VCEO
Min
70
Typ.
10
Max
100
Unit
V
Collector emitter voltage
Emitter collector voltage
I
VECO
ICEO
7
V
Collector-emitter cut-off current VCE = 20 V, If = 0, E = 0
nA
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
Max
0.3
Unit
V
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
Cut-off frequency
VCE = 5 V, IF = 10 mA,
fc
110
0.3
kHz
pF
RL = 100 Ω
Coupling capacitance
f = 1 MHz
Ck
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
50
Typ.
Max
600
Unit
IC/IF
VCE = 5 V, IF = 5 mA
TCET1200
TCET1200G
CTR
CTR
CTR
CTR
CTR
CTR
%
%
%
%
%
%
VCE = 5 V, IF = 10 mA
TCET1201
TCET1201G
40
63
80
TCET1202
TCET1202G
125
200
320
600
TCET1203
TCET1203G
100
160
50
TCET1204
TCET1204G
VCE = 5 V, IF = 5 mA
TCET2200
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter
Test condition
Symbol
IF
Min
Typ.
Max
130
Unit
mA
Forward current
Document Number 83501
Rev. 1.5, 26-Oct-04
www.vishay.com
3
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Pdiss
Min
Typ.
Typ.
Max
265
Unit
mW
Power dissipation
Coupler
Parameter
Test condition
Symbol
VIOTM
Min
Max
8
Unit
kV
Rated impulse voltage
Safety temperature
Tsi
150
°C
Insulation Rated Parameters
Parameter
Test condition
Symbol
Vpd
Min
1.6
Typ.
Max
Unit
kV
Partial discharge test voltage - 100 %, ttest = 1 s
Routine test
Partial discharge test voltage - tTr = 60 s, ttest = 10 s,
VIOTM
8
kV
Lot test (sample test)
(see figure 2)
Vpd
RIO
RIO
RIO
1.3
kV
Ω
1012
1011
109
Insulation resistance
V
V
V
IO = 500 V
IO = 500 V, Tamb = 100 °C
IO = 500 V, Tamb = 150 °C
Ω
Ω
(construction test only)
V
IOTM
300
250
200
t , t = 1 to 10 s
1
2
t , t = 1 s
3
4
Phototransistor
Psi ( mW )
t
= 10 s
= 12 s
test
t
stres
V
Pd
V
V
IOWM
150
100
IORM
IR-Diode
Isi ( mA )
50
0
0
t
3
t
t
test 4
t
1
t
Tr
= 60 s
t
2
t
stres
13930
150
0
25
50
75
100
125
t
T
si
– Safety Temperature ( °C )
94 9182
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
www.vishay.com
4
Document Number 83501
Rev. 1.5, 26-Oct-04
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Switching Characteristics
Parameter
Test condition
Symbol
td
Min
Typ.
3.0
Max
Unit
Delay time
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω
µs
(see figure 3)
V
S = 5 V, IC = 2 mA, RL = 100 Ω
tr
3.0
6.0
0.3
4.7
5.0
9.0
10.0
µs
µs
µs
µs
µs
µs
µs
(see figure 3)
Turn-on time
Storage time
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
ton
ts
V
S = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
S = 5 V, IC = 2 mA, RL = 100 Ω
V
tf
(see figure 3)
Turn-off time
Turn-on time
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 3)
toff
ton
toff
V
S = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 4)
96 11698
I
F
0
+ 5 V
I
F
I
F
t
p
t
0
I
C
adjusted through
input amplitude
I
C
= 2 mA;
100%
90%
R
= 50 W
= 0.01
G
t
p
T
t
= 50 Ps
p
10%
0
Channel I
Channel II
Oscilloscope
t
r
R
C
= 1 MW
= 20 pF
L
L
t
t
t
d
t
t
f
s
t
off
50 W
100 W
on
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
d
r
f
95 10804
(= t + t )
off
s
f
(= t + t )
turn-on time
on
d
r
Figure 3. Test circuit, non-saturated operation
Figure 5. Switching Times
+ 5 V
I
F
I = 10 mA
F
0
I
C
R
= 50
Ω
G
t
p
= 0.01
T
t
µ
s
= 50
p
Channel I
Channel II
Oscilloscope
Ω
1M
R ≥
L
L
C
20 pF
≤
Ω
50
Ω
1 k
95 10843
Figure 4. Test circuit, saturated operation
Document Number 83501
Rev. 1.5, 26-Oct-04
www.vishay.com
5
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
300
V
= 20 V
= 0
CE
Coupled device
I
F
250
200
150
100
50
1000
100
Phototransistor
IR-diode
10
1
0
100
0
25
50
75
0
40
80
120
96 11700
T
amb
– Ambient Temperature(°C )
T
amb
- Ambient Temperature (°C )
95 11026
Figure 6. Total Power Dissipation vs. Ambient Temperature
Figure 9. Collector Dark Current vs. Ambient Temperature
100
1000
100
10
V
=5V
CE
10
1
0.1
1
0.01
0.1
100
0.1
1
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- Forward Voltage ( V )
I
– Forward Current ( mA )
96 11862
V
95 11027
F
F
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Collector Current vs. Forward Current
2.0
100
20mA
V
=5V
CE
I =5mA
F
I =50mA
F
1.5
1.0
10mA
10
5mA
2mA
1mA
1
0.5
0
0.1
100
–25
0
25
50
75
0.1
1
10
T
amb
– Ambient Temperature ( °C )
V
CE
– Collector Emitter Voltage ( V )
95 11025
95 10985
Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
Figure 11. Collector Current vs. Collector Emitter Voltage
www.vishay.com
Document Number 83501
Rev. 1.5, 26-Oct-04
6
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
1.0
0.8
0.6
50
20%
Saturated Operation
V =5V
40
30
S
R =1k Ω
L
CTR=50%
t
t
off
0.4
0.2
0
20
10
0
10%
on
100
20
1
10
– Collector Current ( mA )
0
5
10
15
I
I
– Forward Current ( mA )
95 11028
95 11031
C
F
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
Figure 15. Turn on / off Time vs. Forward Current
1000
V
=5V
CE
100
10
1
100
0.1
1
10
I
– Forward Current ( mA )
95 11029
F
Figure 13. Current Transfer Ratio vs. Forward Current
10
Non Saturated
Operation
V =5V
R =100Ω
L
8
6
S
t
t
on
off
4
2
0
10
0
2
C
4
6
I
– Collector Current ( mA )
95 11030
Figure 14. Turn on / off Time vs. Collector Current
Document Number 83501
Rev. 1.5, 26-Oct-04
www.vishay.com
7
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Package Dimensions in mm
14789
Package Dimensions in mm
14792
www.vishay.com
8
Document Number 83501
Rev. 1.5, 26-Oct-04
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Package Dimensions in mm
14784
Document Number 83501
Rev. 1.5, 26-Oct-04
www.vishay.com
9
TCET1200/ TCET1200G/ TCET2200
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
10
Document Number 83501
Rev. 1.5, 26-Oct-04
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