TCMT4100 [VISHAY]
Optocoupler with Phototransistor Output; 光电耦合器与光电晶体管输出
| 型号： | TCMT4100 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Phototransistor Output |
| 文件： | 总12页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCMT11.. Series
Vishay Semiconductors
Optocoupler with Phototransistor Output
Description
The TCMT11.. Series consist of a phototransistor
optically coupled to a gallium arsenide infrared-
emitting diode in an 4- lead up to 16- lead plastic
Miniflat package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
16467
Applications
Programmable logic controllers, modems, answering
machines, general applications
Coll. Emitter
9
8
Features
Low profile package (half pitch)
AC Isolation test voltage V = 3.75 kV
io
RMS
Low coupling capacitance of typical 0.3 pF
Current Transfer Ratio (CTR) selected into groups
Low temperature coefficient of CTR
1
2
Anode Cath.
4 PIN
16 PIN
Wide ambient temperature range
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
C
Coupling System M
Order Instruction
Ordering Code
TCMT1100
CTR Ranking
50 to 600%
Remarks
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
16 Pin = Quad channel
TCMT1101
TCMT1102
TCMT1103
TCMT1104
TCMT1105
TCMT1106
TCMT1107
TCMT1108
TCMT1109
TCMT4100
40 to 80%
63 to 125%
100 to 200%
160 to 320%
50 to 150%
100 to 300%
80 to 160%
130 to 260%
200 to 400%
50 to 600%
Document Number 83510
Rev. A2, 15–Dec–00
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1 (12)
TCMT11.. Series
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
6
60
1.5
100
125
Unit
V
mA
A
mW
C
V
R
I
F
t ≤ 10 s
T
amb
I
p
FSM
≤ 25 C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Peak collector current
Power dissipation
Test Conditions
Symbol
Value
70
7
Unit
V
V
mA
mA
mW
C
V
V
CEO
ECO
I
C
50
t /T = 0.5, t ≤ 10 ms
I
100
150
125
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
AC isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature
range
Test Conditions
≤ 25 C
Symbol
V
IO
Value
3.75
250
Unit
kV
mW
C
1)
T
amb
P
tot
T
amb
–40 to +100
Storage temperature range
Soldering temperature
T
T
sd
–40 to +100
235
C
C
stg
1)
Related to standard climate 23/50 DIN 50014
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2 (12)
Document Number 83510
Rev. A2, 15–Dec–00
TCMT11.. Series
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I = 50 mA
V = 0 V, f = 1 MHz
R
Symbol
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
V
F
F
C
j
Output (Detector)
Parameter
Test Conditions
I = 100 A
I = 100 A
Symbol
Min.
70
7
Typ.
Max.
100
Unit
V
V
Collector emitter voltage
Emitter collector voltage
Collector dark current
V
V
C
CEO
ECO
CEO
E
V
CE
= 20 V, I = 0, E = 0
I
nA
F
Coupler
Parameter
Test Conditions
Symbol
V
CEsat
Min.
Typ.
Max.
0.3
Unit
V
Collector emitter saturation I = 10 mA, I = 1 mA
F
C
voltage
Cut-off frequency
I = 10 mA, V = 5 V,
f
c
100
0.3
kHz
pF
F
CE
R = 100
L
Coupling capacitance
f = 1 MHz
C
k
Current Transfer Ratio (CTR)
Parameter
I /I
Test Conditions
= 5 V, I = 5 mA
Type
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Min.
Typ.
Max.
6.0
0.8
1.25
2.0
3.2
1.5
3.0
1.6
2.6
4.0
6.0
Unit
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
TCMT1100
TCMT1101
TCMT1102
TCMT1103
TCMT1104
TCMT1105
TCMT1106
TCMT1107
TCMT1108
TCMT1109
TCMT4100
0.5
0.4
0.63
1.0
1.6
0.5
1.0
0.8
1.3
2.0
0.5
C F
F
= 5 V, I = 10 mA
F
= 5 V, I = 10 mA
F
= 5 V, I = 10 mA
F
= 5 V, I = 10 mA
F
= 5 V, I = 5 mA
F
= 5 V, I = 5 mA
F
= 5 V, I = 5 mA
F
= 5 V, I = 5 mA
F
= 5 V, I = 5 mA
F
= 5 V, I = 5 mA
F
Document Number 83510
Rev. A2, 15–Dec–00
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3 (12)
TCMT11.. Series
Vishay Semiconductors
Switching Characteristics
Parameter
Delay time
Rise time
Test Conditions
V = 5 V, I = 2 mA, R = 100 (see figure 1)
Symbol
Typ.
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0
Unit
s
s
s
s
s
s
s
s
t
d
S
C
L
t
r
Fall time
t
f
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
t
s
t
on
off
on
off
t
t
t
V = 5 V, I = 10 mA, R = 1 k (see figure 2)
S
F
L
+ 5 V
96 11698
I
F
I
F
I
F
0
adjusted through
input amplitude
I
C
= 2 mA;
0
R
= 50
G
t
t
p
t
p
= 0.01
T
I
C
t = 50
s
p
Channel I
Channel II
100%
90%
Oscilloscope
R = 1 M
L
C = 20 pF
L
50
100
95 10804
10%
0
Figure 1. Test circuit, non-saturated operation
t
t
r
t
s
t
f
t
d
+ 5 V
I
I = 10 mA
F
F
t
t
on
off
0
I
C
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
R
= 50
G
d
f
t
p
(= t + t )
r
off
s
f
= 0.01
(= t + t )
turn-on time
T
on
d
r
t = 50
p
s
Figure 3. Switching times
Channel I
Channel II
Oscilloscope
R > 1 M
L
C < 20 pF
L
50
1 k
95 10843
Figure 2. Test circuit, saturated operation
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4 (12)
Document Number 83510
Rev. A2, 15–Dec–00
TCMT11.. Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
10000
1000
100
10
300
250
200
150
100
50
Coupled device
V
I =0
F
=20V
CE
Phototransistor
IR-diode
0
1
100
0
40
80
120
0
25
50
75
96 11700
T
amb
– Ambient Temperature ( °C )
95 11026
T
amb
– Ambient Temperature ( °C )
Figure 4. Total Power Dissipation vs.
Ambient Temperature
Figure 7. Collector Dark Current vs. Ambient Temperature
100
1000.0
100.0
10.0
1.0
V
=5V
CE
10
1
0.1
0.01
0.1
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1
10
96 11862
V – Forward Voltage ( V )
F
95 11027
I – Forward Current ( mA )
F
Figure 5. Forward Current vs. Forward Voltage
Figure 8. Collector Current vs. Forward Current
2.0
100
20mA
V
=5V
CE
I =5mA
F
I =50mA
F
1.5
1.0
0.5
0
10mA
5mA
10
1
2mA
1mA
0.1
100
–25
0
25
50
75
0.1
1
10
95 11025
T
amb
– Ambient Temperature ( °C )
95 10985
V
CE
– Collector Emitter Voltage ( V )
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 9. Collector Current vs. Collector Emitter Voltage
Document Number 83510
Rev. A2, 15–Dec–00
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5 (12)
TCMT11.. Series
Vishay Semiconductors
1.0
50
40
30
20%
Saturated Operation
V =5V
S
0.8
0.6
R =1k
L
CTR=50%
t
t
off
0.4
0.2
0
20
10
0
10%
on
100
20
1
10
– Collector Current ( mA )
0
5
10
15
95 11028
I
95 11031
I – Forward Current ( mA )
F
C
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 12. Turn on / off Time vs. Forward Current
1000
10
Non Saturated
Operation
V
=5V
CE
V =5V
8
6
S
t
t
on
R =100
L
100
10
1
off
4
2
0
100
10
0.1
1
10
0
2
4
6
95 11029
I – Forward Current ( mA )
F
95 11030
I
– Collector Current ( mA )
C
Figure 11. Current Transfer Ratio vs. Forward Current
Figure 13. Turn on / off Time vs. Collector Current
Pin 1 Indication Type System Letter
T1100M
901TK27
15230
Date
Code
(YM)
Company
Logo
Production
Location
Figure 14. Marking example
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6 (12)
Document Number 83510
Rev. A2, 15–Dec–00
TCMT11.. Series
Vishay Semiconductors
Dimensions of TCMT1... in mm
16283
Document Number 83510
Rev. A2, 15–Dec–00
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7 (12)
TCMT11.. Series
Vishay Semiconductors
Dimensions of TCMT4... in mm
15226
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8 (12)
Document Number 83510
Rev. A2, 15–Dec–00
TCMT11.. Series
Vishay Semiconductors
Dimensions of Reel in mm
W
1
Reel Hub
W
2
16515
Version
G
Tape Width
16
A
N
W
W
2 max
1
330 ± 1
100 ± 1.5
16.4 + 2
22.4
Dimensions of Leader and Trailer in mm
Trailer
Leader
no devices
devices
no devices
End
Start
min. 200
min. 400
96 11818
Document Number 83510
Rev. A2, 15–Dec–00
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9 (12)
TCMT11.. Series
Vishay Semiconductors
Dimensions of Tape in mm
16511
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10 (12)
Document Number 83510
Rev. A2, 15–Dec–00
TCMT11.. Series
Vishay Semiconductors
Dimensions of Tape in mm
16510
Document Number 83510
Rev. A2, 15–Dec–00
www.vishay.com
11 (12)
TCMT11.. Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductorsproducts for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductorsagainst all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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12 (12)
Document Number 83510
Rev. A2, 15–Dec–00
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