TCST1210 [VISHAY]
Transmissive Optical Sensor with Phototransistor Output; 透射光学传感器，具有光电晶体管输出
| 型号： | TCST1210 |
| 厂家： | 
VISHAY |
| 描述： | Transmissive Optical Sensor with Phototransistor Output |
| 文件： | 总6页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCST1210
Vishay Telefunken
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
Applications
95 10541
Contactless optoelectronic switch, control
and counter
15118
Features
Compact construction
No setting efforts
Polycarbonate case protected against
ambient light
10.0
Current Transfer Ratio (CTR) of typical 10%
Top view
Order Instruction
Ordering Code
TCST1210
Resolution (mm) / Aperture (mm)
0.4 0.5
Remarks
/
Document Number 83769
Rev. A1, 08–Jun–99
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1 (6)
TCST1210
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
5
50
1
100
100
Unit
V
mA
A
mW
C
V
R
I
F
t ≤ 10 s
T
amb
I
p
FSM
≤ 25 C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Test Conditions
Symbol
Value
30
5
Unit
V
V
mA
mA
mW
C
V
V
CEO
ECO
I
C
30
t /T = 0.5, t ≤ 10 ms
I
100
100
100
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
Test Conditions
≤ 25 C
Symbol
P
tot
Value
200
–20 to +85
–30 to +100
260
Unit
mW
C
C
C
Total power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
T
amb
T
amb
T
stg
2 mm from case, t ≤ 5 s
T
sd
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Reverse voltage
Test Conditions
I = 20 mA
I = 10 A
R
Symbol
Min.
5
Typ.
1.25
Max.
1.6
Unit
V
V
V
F
F
V
R
Junction capacitance
V = 0, f = 1 MHz
R
C
j
50
pF
Output (Detector)
Parameter
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector dark current
Test Conditions
Symbol
Min.
30
5
Typ.
Max.
100
Unit
V
V
V
V
C
CEO
ECO
CEO
I = 10 A
E
V
CE
= 10 V, I = 0, E = 0
I
nA
F
Coupler
Parameter
Current transfer ratio
Collector current
Test Conditions
= 5 V, I = 20 mA
F
Symbol
CTR
Min.
2.5
0.5
Typ.
10
2
Max.
Unit
%
mA
V
V
CE
= 5 V, I = 20 mA
I
C
CE
F
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2 (6)
Document Number 83769
Rev. A1, 08–Jun–99
TCST1210
Vishay Telefunken
Switching Characteristics
Parameter
Rise time
Fall time
Test Conditions
Symbol
Typ.
20.0
20.0
Unit
s
s
V = 5 V, I = 100 A, R = 1 k (see figure 1)
t
r
S
C
L
t
f
+ 5 V
96 11698
I
F
I
F
I
F
0
I
C
= 100 A
Adjusted throug
input amplitude
R
= 50
G
0
t
p
t
t
p
= 0.01
= 50
T
s
t
p
I
C
100%
90%
Channel I
Channel II
Oscilloscope
R > 1 M
L
C < 20 pF
L
50
1 k
15119
10%
0
t
Figure 1. Test circuit
t
r
t
s
t
f
t
d
t
on
t
off
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
d
f
(= t + t )
r
off
s
f
(= t + t )
turn-on time
on
d
r
Figure 2. Switching times
Document Number 83769
Rev. A1, 08–Jun–99
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3 (6)
TCST1210
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
100
10
V
= 5V
CE
1
0.1
10
1
0.01
0.001
0.1
100
0.1
1
10
2.0
0
0.4
0.8
1.2
1.6
16100
I – Forward Current ( mA )
F
16097
V – Forward Voltage ( V )
F
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Collector Current vs. Forward Current
10
1.2
I =50mA
F
1.0
0.8
0.6
20mA
1
0.1
10mA
5mA
2mA
1mA
V
=10V
CE
I =10mA
F
0.01
0.4
–25
100
0.1
1
10
100
0
25
50
75
16101
V
CE
– Collector Emitter Voltage ( V )
16098
T
amb
– Ambient Temperature ( °C )
Figure 4. Relative Current Transfer Ratio vs. Ambient
Temperature
Figure 7. Collector Current vs. Collector Emitter Voltage
1000
100
V
=10V
CE
I =0
F
100
10
1
10
1
V
=5V
CE
0.1
100
0
25
T – Ambient Temperature ( °C )
amb
50
75
100
0.1
1
10
16099
16102
I – Forward Current ( mA )
F
Figure 5. Collector Dark Current vs. Ambient Temperature
Figure 8. Current Transfer Ratio vs. Forward Current
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4 (6)
Document Number 83769
Rev. A1, 08–Jun–99
TCST1210
Vishay Telefunken
Dimensions of TCST1210 in mm
15121
Document Number 83769
Rev. A1, 08–Jun–99
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5 (6)
TCST1210
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6 (6)
Document Number 83769
Rev. A1, 08–Jun–99
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