TFBS4711-TR1 [VISHAY]
Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation; 串行红外收发器爵士， 115.2 kbit / s的2.7 V至5.5 V操作
| 型号： | TFBS4711-TR1 |
| 厂家： | 
VISHAY |
| 描述： | Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation |
| 文件： | 总11页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TFBS4711
Vishay Semiconductors
VISHAY
Serial Infrared Transceiver SIR, 115.2 kbit/s,
2.7 V to 5.5 V Operation
Description
The TFBS4711 is a low profile, Infrared Data Trans-
ceiver module. It supports IrDA data rates up to
115.2 kbit/s (SIR). The transceiver module consists of
a PIN photodiode, an infrared emitter (IRED), and a
low-power CMOS control IC to provide a total front-
end solution in a single package.
The device is designed for the low power IrDA stan-
dard with an extended range on-axis up to 1 m. The
18508
Rxd pulse width is independent of the duration of Txd
pulse and always stays at a fixed width thus making
the device optimum for all standard SIR Encoder/
Decoder and interfaces. The Shut Down (SD) feature
cuts current consumption to typically 10 nA.
• Split power supply, an independent, unregulated
supply for IRED Anode and a well regulated
supply for VCC
• Directly Interfaces with Various Super I/O and
Controller Devices and Encoder/ Decoder such as
TOIM4232.
Features
• Compliant with the latest IrDA physical layer
low power specification
Applications
( 9.6 kbit/s to 115.2 kbit/s)
• Small package:
• Ideal for Battery Operated Devices
H 1.9 mm x D 3.1 mm x L 6.0 mm
• PDAs
• Industries smallest footprint
- 6.0 mm length
- 1.9 mm height
• Typical Link distance on-axis up to 1 m
• Mobile Phones
• Electronic Wallet (IrFM)
• Notebook Computers
• Digital Still and Video Cameras
• Battery & Power Management Features:
> Idle Current - 75 µA Typical
• Printers, Fax Machines, Photocopiers,
Screen Projectors
> Shutdown Current - 10 nA Typical
> Operates from 2.4 V - 5.5 V within specification
over full temperature range from - 25 °C to + 85 °C
• Data Loggers
• External Infrared Adapters (Dongles)
• Diagnostics Systems
• Remote Control - transmit distance up to 8 meters
• Medical and Industrial Data Collection Devices
• Kiosks, POS, Point and Pay Devices
• GPS
• Tri-State Receiver Output, floating in shutdown
with a weak pull-up
• Constant Rxd output pulse width (2 µs typical)
• Meets IrFM Fast Connection requirements
• Access Control
• Field Programming Devices
Parts Table
Part
Description
Oriented in carrier tape for side view surface mounting
Oriented in carrier tape for side view surface mounting
Qty / Reel
TFBS4711-TR1
TFBS4711-TR3
1000 pcs
2500 pcs
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
1
TFBS4711
Vishay Semiconductors
VISHAY
Functional Block Diagram
V
CC
Amp
Comp
RxD
Driver
IRED A
Power
Control
SD
Driver
GND
TxD
18280
Pinout
Definitions:
TFBS4711
weight 50 mg
In the Vishay transceiver data sheets the following nomenclature is
used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared
standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy
1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the
Low Power Option to MIR and FIR and VFIR was added with IrPhy
1.4.A new version of the standard in any case obsoletes the former
version.
2
4
5
6
1
3
With introducing the updated versions the old versions are obso-
lete. Therefore the only valid IrDA standard is the actual version
IrPhy 1.4 (in Oct. 2002).
18466
Pin Description
Pin Number Function
Description
I/O
I
Active
HIGH
1
2
3
IRED
Anode
IRED Anode is directly connected to a power supply. The LED current can be
decreased by adding a resistor in series between the power supply and IRED
Anode. A separate unregulated power supply can be used at this pin.
Txd
This Input is used to turn on IRED transmitter when SD is low. An on-chip
protection circuit disables the LED driver if the Txd pin is asserted for longer than
80 µs
Received Data Output, normally stays high but goes low for a fixed duration
during received pulses. It is capable of driving a standard CMOS or TTL load.
Rxd
SD
O
I
LOW
4
5
Shutdown. Setting this pin active switches the device into shutdown mode
Supply Voltage
HIGH
V
CC
6
GND
Ground
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2
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Reference Point Ground, Pin 6 unless otherwise noted.
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
V
Supply voltage range, all states
V
- 0.5
+ 6.0
CC
CC
Input current
For all Pins except IRED Anode
Pin
I
10.0
mA
Output sink current, Rxd
25.0
80
mA
mA
Average output current, pin 1
20 % duty cycle
I
(DC)
(RP)
IRED
Repetitive pulsed output current < 90 µs, t < 20 %
I
400
+ 6.0
+ 6.0
+ 85
mA
V
on
IRED
IRED anode voltage, pin 1
V
- 0.5
- 0.5
- 30
IREDA
Voltage at all inputs and outputs V > V is allowed
V
IN
V
in
CC
Ambient temperature range
(operating)
T
°C
amb
Storage temperature range
Soldering temperature
T
- 40
+ 100
240
°C
°C
stg
See Recommended Solder
Profile
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
3
TFBS4711
Vishay Semiconductors
VISHAY
Eye safety information
Parameter
Test Conditions
Symbol
d
Min
1.3
Typ.
1.5
Max
Unit
mm
Virtual source size
Method: (1-1/e) encircled
energy
*)
Maximum intensity for class 1
IEC60825-1 or EN60825-1,
edition Jan. 2001, operating
below the absolute maximum
ratings
I
mW/sr
e
**)
(500)
Electrical Characteristics
Transceiver
T
= 25 °C, V = V
= 2.4 V to 5.5 V unless otherwise noted.
amb
CC
IREDA
Parameter
Test Conditions
Symbol
Min
2.4
Typ.
75
Max
5.5
Unit
V
Supply voltage range, all states
Idle supply current @ V
V
CC
*)
I
130
µA
CC1
SD = Low, E = 1 klx ,
CC1
e
(receive mode, no signal)
T
= - 25 °C to + 85 °C,
amb
V
= 2.7 V to 5.5 V
CC
*)
I
µA
SD = Low, E = 1 klx ,
CC1
e
T
= 25 °C,
amb
V
V
= 2.7 V to 5.5 V
CC
CC
Receive current
= 2.7 V
I
80
µA
µA
µA
°C
CC
Shutdown current
SD = High, T = 25 °C, E = 0 klx
I
I
< 0.1
2
3
e
SD
SD = High, T = 85 °C
SD
Operating temperature range
Output voltage low, Rxd
Output voltage high, Rxd
T
- 25
- 0.5
+ 85
A
I
I
I
= 1 mA
V
V
0.15 x V
CC
V
V
OL
OH
OH
OL
= - 500 µA
= - 250 µA
0.8 x V
0.9 x V
400
V
V
+ 0.5
+ 0.5
OH
OH
CC
CC
CC
CC
V
R
V
Rxd to V impedance
500
600
kΩ
V
CC
Rxd
Input voltage low: Txd, SD
Input voltage high: Txd, SD
V
- 0.5
0.5
6.0
IL
CMOS level (0.5 x V typ,
V
V - 0.5
CC
V
CC
IH
threshold level)
Input leakage current (Txd, SD)
Controlled pull down current
V
= 0.9 x V
I
ICH
- 2
+ 2
µA
µA
in
CC
SD, Txd = "0" or "1",
0 < V < 0.15 V
I
+ 150
IRTx
in
CC
SD, Txd = "0" or "1"
> 0.7 V
I
- 1
0
1
5
µA
IRTx
V
in
CC
Input capacitance
C
pF
IN
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4
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
Vishay Semiconductors
VISHAY
Optoelectronic Characteristics
Receiver
T
= 25 °C, V = 2.4 V to 5.5 V unless otherwise noted
amb
CC
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
2
Minimum detection threshold
irradiance
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0 °, 15 °
E
35
(3.5)
80
(8)
e
mW/m
2
(µW/cm )
2
Maximum detection threshold
irradiance
λ = 850 nm - 900 nm
E
E
5
e
kW/m
(500)
2
(mW/cm )
2
Maximum no detection
threshold irradiance
4
(0.4)
e
mW/m
2
(µW/cm )
Rise time of output signal
Fall time of output signal
Rxd pulse width
10 % to 90 %, C = 15 pF
t
10
10
100
100
3.0
ns
ns
µs
ns
L
r(Rxd)
90 % to 10 %, C = 15 pF
t
f(Rxd)
L
Input pulse width > 1.2 µs
t
1.7
2.0
PW
2
Leading edge jitter
250
Input Irradiance = 100 mW/m ,
≤ 115.2 kbit/s
Standby /Shutdown delay,
receiver startup time
After shutdown active
or power-on
150
150
µs
µs
Latency
t
L
Transmitter
T
= 25 °C, V = 2.4 V to 5.5 V unless otherwise noted.
amb
CC
Parameter
Test Conditions
Symbol
Min
200
Typ.
300
Max
400
Unit
mA
IRED operating current
T
= - 25 °C to + 85 °C
I
D
amb
Transceiver operating peak
supply current
During pulsed IRED operation
I
0.57
mA
CC
@ I = 300 mA
D
IRED leakage current
Output radiant intensity
Txd = 0 V, 0 < V < 5.5 V
I
- 1
1
µA
CC
IRED
α = 0 °, Txd = High, SD = Low,
I
tbd
60
35
mW/sr
e
R = 0 Ω, V
= 2.4 V
LED
α = 0 °, 15 °, Txd = High, SD =
Low, R = 0 Ω, V = 2.4 V
I
tbd
mW/sr
mW/sr
e
LED
V
= 5.0 V, α = 0 °, 15 °, Txd =
I
0.04
900
CC
e
High or SD = High (Receiver is
inactive as long as SD = High)
Output radiant intensity, angle of
half intensity
α
22
45
°
Peak-emission wavelength
λ
880
nm
p
Spectral bandwidth
Optical rise time
∆λ
nm
ns
t
10
10
100
100
2.23
ropt
Optical fall time
t
ns
fopt
Optical output pulse duration
Input pulse width 1.63 µs,
t
1.41
1.63
µs
opt
115.2 kbit/s
Input pulse width t
Input pulse width t
< 20 µs
≥ 20 µs
t
t
t + 0.15
Txd
µs
µs
%
Txd
opt
Txd
t
300
25
Txd
opt
Optical overshoot
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
5
TFBS4711
Vishay Semiconductors
VISHAY
Recommended Solder Profile
260
240
220
200
180
160
140
120
100
10 s max. @ 230°C
240°C max.
2 - 4 °C/s
160°C max.
120 s...180 s
90 s max.
80
2...4°C/s
60
40
20
0
0
50
100
150
200
250
300
350
18075
Time/s
The combination of resistor R1 and capacitors C1,
C2, C3 and C4 filter out any power supply noise to
provide a smooth supply voltage.
Recommended Circuit Diagram
The placement of these components is critical. It is
strongly recommended to position C3 and C4 as
close as possible to the transceiver power supply
pins. A Tantalum capacitor should be used for C1 and
C3 while a ceramic capacitor should be used for C2
and C4.
A current limiting resistor is not needed for normal
operation. It is strongly recommended to use the Rled
values mentioned in Table 1 below for high
VCC
IR Controller
Vdd
TFBS4711
IREDA (1)
Rled
TxD
RxD
SD
(2)
(3)
(4)
(5)
(6)
IRTX
IRRX
IRMODE
Vcc
GND
R1= 47Ω
temperature operation. For Low Power Mode, IRED
Anode voltage of less than 5 V is recommended.
GND
C4
0.1 µF
C2
C3
C1
4.7 µF
Under extreme EMI conditions as placing a RF -
transmitter antenna on top of the transceiver, it is rec-
ommended to protect all inputs by a low-pass filter, as
a minimum a 12 pF capacitor, especially at the Rxd
port.
0.1µF 4.7 µF
18510
Figure 1. Recommended Application Circuit
The TFBS4711 integrates a sensitive receiver and a
built-in power driver. This combination needs a care-
ful circuit layout. The use of thin, long, resistive and
inductive wiring should be avoided. The inputs (Txd,
SD) and the output (Rxd) should be directly (DC) cou-
pled to the I/O circuit.
Basic RF design rules for circuit design should be fol-
lowed. Especially longer signal lines should not be
used without proper termination. For reference see
"The Art of Electronics" by Paul Horowitz, Winfield
Hill, 1989, Cambridge University Press, ISBN:
0521370957.
www.vishay.com
6
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
Vishay Semiconductors
VISHAY
from the I/O suppliers. In special cases refer to the I/
O manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.
I/O and Software
In the description, already different I/Os are men-
tioned. Different combinations are tested and the
function verified with the special drivers available
Table 1.
Recommended Application Circuit Components
Component
C1, C3
C2, C4
R1
Recommended Value
Vishay Part Number
293D 475X9 016B
4.7 µF, 16 V
0.1 µF, Ceramic
47 Ω, 0.125 W
See Table 1
VJ 1206 Y 104 J XXMT
CRCW-1206-47R0-F-RT1
Rled
Table 2.
Truth table
SD
Txd
Optical input Irradiance
Rxd
Transmitter
Operation
2
mW/m
Inputs
high
Inputs
x
Inputs
x
Outputs
Outputs
0
Remark
weakly pulled
Shutdown
(500 Ω) to V
CC1
low
low
high
x
x
high inactive
high inactive
I
Transmitting
e
high
0
Protection is active
> 300 µs
low
low
< 4
high inactive
0
Ignoring low signals below the
IrDA defined threshold for
noise immunity
low
low
low
low
> Min. Detection Threshold Irradiance
< Max. Detection Threshold Irradiance
low (active)
undefined
0
0
Response to an IrDA
compliant optical input signal
> Max. Detection Threshold Irradiance
Overload conditions can
cause unexpected outputs
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
7
TFBS4711
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
6.00 (0.236)
1.90 (0.075)
EMITTER
DETECTOR
3.81 (0.150)
3.00 (0.118)
0.66 (0.026)
1.65 (0.065)
PIN 1
ISO Method A
0.95 (0.037) (5 PLCS)
TOL NON CUM
0.62 (0.025)
0.42 (0.017)
0.36 (0.014) (6 PLCS)
0.58 (0.023) (6 PLCS)
0.13 0.05
(0.005 0.002)
RECOMMENDED FOOTPRINT
TOP VIEW
0.95 (0.037)
0.64 (0.025)
1
2
3
4
5
6
0.81 (0.032)
1.74 (0.068)
EMITTER
DETECTOR
18815
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8
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
Vishay Semiconductors
VISHAY
Reel Dimensions
W
1
Reel Hub
W
2
14017
Tape Width
A max.
N
W min.
W max.
W min.
W max.
1
2
3
3
mm
16
mm
330
mm
50
mm
mm
mm
mm
16.4
22.4
15.9
19.4
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
9
TFBS4711
Vishay Semiconductors
VISHAY
Tape Dimensions in mm
18297
www.vishay.com
10
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82633
Rev. 1.6, 27-Feb-04
www.vishay.com
11
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