TLCS5110 [VISHAY]
Visible LED, Clear;TLCS511.
Vishay Semiconductors
High Brightness LED, ∅ 5 mm Untinted Non-Diffused
Description
The TLC.51.. series is a clear, non diffused 5 mm LED
for high end applications where supreme luminous
intensity required.
These lamps with clear untinted plastic case utilize
the highly developed ultrabright AlInGaP (AS) and
InGaN technologies.
The lens and the viewing angle is optimized to
achieve best performance of light output and visibility.
19223
Pb
e2
Pb-free
Features
• Untinted non diffused lens
• Utilizing ultrabright AllnGaP, OMA
technology
Applications
Interior and exterior lighting
Outdoor LED panels
• High luminous intensity
• High operating tempreature:
Tj (chip junction temperature)
up to 125 °C for AllnGaP devices
Instrumentation and front panel indicators
Central high mounted stop lights (CHMSL) for motor
vehicles
• Luminous intensity and color categorized for each
packing unit
Replaces incandescent lamps
Traffic signals
• ESD-withstand voltage: 2 kV acc. to MIL STD 883
D, Method 3015.7 for AllnGaP, 1 kV for InGaN
Light guide design
• Lead-free device
Parts Table
Part
Color, Luminous Intensity
Red, I > 20000 mcd (typ.)
Angle of Half Intensity
Technology
AllnGaP on Si
( ϕ)
TLCS5110
9 °
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLCS511.
Parameter
Test condition
Symbol
Value
5
Unit
V
Reverse voltage
V
I
R
DC Forward current
T
t
≤ 85 °C
50
mA
A
amb
amb
F
Surge forward current
Power dissipation
≤ 10 µs
I
1
135
p
FSM
T
≤ 85 °C
P
mW
°C
V
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
T
125
j
T
- 40 to + 100
- 40 to + 100
260
°C
amb
T
°C
stg
t ≤ 5 s, 2 mm from body
T
°C
sd
Thermal resistance junction/
ambient
R
300
K/W
thJA
Document Number 84628
Rev. 1.0, 08-Oct-04
www.vishay.com
1
TLCS511.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLCS5110
Parameter
Test condition
= 50 mA
Part
Symbol
Min
Typ.
Max
630
Unit
mcd
1)
I
I
I
I
TLCS5110
I
V
7500
20000
Luminous intensity
F
F
F
F
Dominant wavelength
= 50 mA
= 50 mA
= 50 mA
λ
λ
620
625
632
18
nm
nm
nm
d
Peak wavelength
p
Spectral bandwidth at
∆λ
50 % I
rel max
Angle of half intensity
Forward voltage
I
I
I
I
I
= 50 mA
= 50 mA
= 10 µA
= 50 mA
= 50 mA
ϕ
9
deg
V
F
F
R
F
F
V
V
2.1
2.7
F
Reverse voltage
5
V
R
Temperature coefficient of V
Temperature coefficient of λ
TC
- 3.5
0.05
mV/K
nm/K
F
VF
TCλ
d
d
1)
in one Packing Unit I
/I
≤ 2.0
Vmax Vmin
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Document Number 84628
Rev. 1.0, 08-Oct-04
TLCS511.
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10
1
160
140
120
100
80
Red
Red
60
0.1
40
20
0.01
0
1
10
100
0
20
40
60
80
100 120
15978
I
F
- Forward Current ( mA )
16708_2
T
– Ambient Temperature ( °C )
amb
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Relative Luminous Flux vs. Forward Current
1.2
100
90
Red
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Red
80
70
60
50
40
30
20
10
0
570 580 590 600 610 620 630 640 650 660 670
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
16007
λ - Wavelength ( nm )
15974_2
V – Forward Voltage ( V )
F
Figure 2. Forward Current vs. Forward Voltage
Figure 5. Relative Intensity vs. Wavelength
60
50
40
30
20
10
0
Red
0
20
40
60
80
100 120
16710_2
T
amb
– Ambient Temperature ( °C )
Figure 3. Forward Current vs. Ambient Temperature
Document Number 84628
Rev. 1.0, 08-Oct-04
www.vishay.com
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TLCS511.
Vishay Semiconductors
Package Dimensions in mm
9612121
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Document Number 84628
Rev. 1.0, 08-Oct-04
TLCS511.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 84628
Rev. 1.0, 08-Oct-04
www.vishay.com
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