TLMBG3100-GS08 [VISHAY]
Optoelectronic Device;
| 型号： | TLMBG3100-GS08 |
| 厂家： | 
VISHAY |
| 描述： | Optoelectronic Device |
| 文件： | 总7页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLMB / BG / TG31..
VISHAY
Vishay Semiconductors
High Intensity SMD LED
Description
This device has been designed to meet the increasing
demand for InGaN technology.
The package of the TLMB/ TLMBG/ TLMTG31.. is the
PLCC-2 (equivalent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
19225
Pb
e3
Features
• SMD LED with exceptional brightness
Pb-free
• Luminous intensity categorized
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin 1.6
• Lead-free device
Parts Table
Part
Color, Luminous Intensity
Blue, I > 20 mcd
Angle of Half Intensity (
60 °
)
Technology
InGaN on SiC
TLMB3140
V
TLMBG3100
TLMTG3100
Blue green, I > 20 mcd
60 °
60 °
InGaN on SiC
InGaN on SiC
V
True green, I > 66 mcd
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLMB3140 , TLMBG3100 , TLMT3100
Parameter
Test condition
Symbol
Value
Unit
V
Reverse voltage
V
5
R
DC Forward current
T
80 °C
I
20
mA
A
amb
F
Surge forward current
Power dissipation
t
10
s
I
0.2
84
p
FSM
T
80 °C
P
mW
°C
amb
V
Junction temperature
Operating temperature range
T
110
j
T
- 40 to + 100
°C
amb
Document Number 83162
Rev. 1.3, 31-Aug-04
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1
TLMB / BG / TG31..
Vishay Semiconductors
VISHAY
Parameter
Test condition
Symbol
Value
Unit
°C
Storage temperature range
T
- 40 to + 100
stg
Soldering temperature
t
5 s
T
260
350
°C
sd
Thermal resistance junction/
ambient
mounted on PC board
R
K/W
thJA
2
(pad size > 16 mm )
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Pure green
TLMTG3100
Parameter
Test condition
= 20 mA
Symbol
Min
80
Typ.
180
Max
541
Unit
mcd
1)
I
I
I
I
I
I
I
I
I
Luminous intensity
F
F
F
F
F
R
F
F
V
d
p
Dominant wavelength
Peak wavelength
= 20 mA
= 20 mA
= 20 mA
= 20 mA
515
528
522
60
nm
nm
deg
V
Angle of half intensity
Forward voltage
V
3.5
4.2
F
Reverse voltage
= 10
A
V
5
V
R
Temperature coefficient of V
= 20 mA
= 20 mA
TC
- 3.5
- 0.3
mV/K
%/K
F
V
Temperature coefficient of I
TC
I
V
1)
in one Packing Unit I
/I
1.6
Vmax Vmin
Blue green
TLMBG3100
Parameter
Test condition
= 20 mA
Symbol
Min
66
Typ.
130
Max
514
Unit
mcd
1)
I
I
I
I
I
I
I
I
I
Luminous intensity
F
F
F
F
F
R
F
F
V
d
p
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
= 20 mA
= 20 mA
= 20 mA
= 20 mA
496
505
502
60
nm
nm
deg
V
V
3.5
4.2
F
Reverse voltage
= 10
A
V
5
V
R
Temperature coefficient of V
= 20 mA
= 20 mA
TC
- 4
mV/K
%/K
F
V
Temperature coefficient of I
TC
- 0.2
V
I
1)
in one Packing Unit I
/I
1.6
Vmax Vmin
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Document Number 83162
Rev. 1.3, 31-Aug-04
TLMB / BG / TG31..
VISHAY
Vishay Semiconductors
Blue
TLMB3140
Parameter
Test condition
Symbol
Min
20
Typ.
40
Max
476
Unit
mcd
1)
I = 20 mA
I
Luminous intensity
F
V
d
p
Dominant wavelength
Peak wavelength
I
= 20 mA
462
470
464
60
nm
nm
deg
V
F
I = 20 mA
F
Angle of half intensity
Forward voltage
I = 20 mA
F
I = 20 mA
V
3.5
4.2
F
F
Reverse voltage
I
= 10
A
V
5
V
R
R
Temperature coefficient of V
I = 20 mA
TC
V
- 4
mV/K
%/K
F
F
Temperature coefficient of I
I = 20 mA
TC
I
- 0.4
V
F
1)
in one Packing Unit I
/I
1.6
Vmax Vmin
Typical Characteristics (Tamb = 25 C unless otherwise specified)
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
2.5
3.0
3.5
V – Forward Voltage ( V )
F
4.0
4.5
5.0
5.5
16805
T
amb
– Ambient Temperature( °C )
16807
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Forward Current vs. Forward Voltage
1.8
25
20
15
10
5
True Green
I
= 50 mA
F
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
-40 -20
0
20
40 60 80 100
0
10 20 30 40 50 60 70 80 90 100 110
– Ambient Temperature( °C )
16806
T
16056
T
amb
– Ambient Temperature ( °C )
amb
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 4. Rel. Luminous Flux vs. Ambient Temperature
Document Number 83162
Rev. 1.3, 31-Aug-04
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TLMB / BG / TG31..
Vishay Semiconductors
VISHAY
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Blue Green
I = 50 mA
F
1.0
0.1
420 440 460 480 500 520 540 560 580 600
1
10
100
16070
λ - Wavelength ( nm )
16808
I
– Forward Current ( mA )
F
Figure 5. Specific Luminous Flux vs. Forward Current
Figure 8. Relative Intensity vs. Wavelength
10.00
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
True Green
True Green
1.00
0.10
0.01
1
10
100
460 480 500 520 540 560 580 600 620
16039
I
F
- Forward Current ( mA )
16068
λ - Wavelength ( nm )
Figure 6. Relative Luminous Flux vs. Forward Current
Figure 9. Relative Intensity vs. Wavelength
1.2
476
Blue
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Blue
474
472
470
468
0
10
20
I - Forward Current ( mA )
F
30
40
50
400 420 440 460 480 500 520 540 560
16069
λ - W avelength ( nm )
16814
Figure 7. Relative Intensity vs. Wavelength
Figure 10. Dominant Wavelength vs. Forward Current
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Document Number 83162
Rev. 1.3, 31-Aug-04
TLMB / BG / TG31..
VISHAY
Vishay Semiconductors
538
536
534
532
530
528
526
524
515
513
511
509
507
505
503
Blue Green
True Green
501
0
0
10
20
I - Forward Current ( mA )
F
30
40
50
10
20
30
40
50
16813
I
- Forward Current ( mA )
16812
F
Figure 11. Dominant Wavelength vs. Forward Current
Figure 12. Dominant Wavelength vs. Forward Current
Package Dimensions in mm
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
C
A
4
1.6 (1.9)
∅ 2.4
Dimensions: IR and Vaporphase
(Wave Soldering)
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
Document Number 83162
Rev. 1.3, 31-Aug-04
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TLMB / BG / TG31..
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83162
Rev. 1.3, 31-Aug-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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