TLMD3101-GS08 [VISHAY]
Visible LED, Clear;
VISHAY 
TLMD310.
Vishay Semiconductors
VISHAY
High Intensity SMD LED
Description
These new devices have been designed to meet the
increasing demand for surface mounting technology.
This device is used for outdoor or for low power appli-
cations.
The package of the TLMD310. is the PLCC-2 (equiv-
alent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
19225
Pb
e3
Pb-free
Features
Applications
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement equipment
• EIA and ICE standard package
Automotive:
Backlighting in dashboards and switches
Telecommunication:
Indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight for battery driven equipment
Small indicator for outdoor applications
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin 2.0, optional 1.6
• Lead-free device
Parts Table
Part
Color, Luminous Intensity
Red, I > 20 mcd (typ.)
Angle of Half Intensity (
60 °
)
Technology
GaAIAs on GaAs
TLMD3100
v
TLMD3101
TLMD3105
Red, I = (16 to 50) mcd
60 °
60 °
GaAIAs on GaAs
GaAIAs on GaAs
V
Red, I = (10 to 32) mcd
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLMD310.
Parameter
Test condition
Symbol
Value
Unit
V
Reverse voltage
V
6
R
DC Forward current
Surge forward current
Power dissipation
I
30
mA
A
F
t
10
s
I
0.5
100
p
FSM
T
60 °C
P
mW
amb
V
Document Number 83037
Rev. 1.8, 31-Aug-04
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TLMD310.
Vishay Semiconductors
VISHAY
Parameter
Test condition
Symbol
Value
100
Unit
°C
Junction temperature
T
j
Operating temperature range
Storage temperature range
T
- 40 to + 100
- 55 to + 100
260
°C
°C
amb
T
stg
Soldering temperature
t
5 s
T
°C
sd
Thermal resistance junction/
ambient
mounted on PC board
R
400
K/W
thJA
2
(pad size > 16 mm )
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLMD310.
Parameter
Test condition
= 10 mA
Part
Symbol
Min
10
Typ.
Max
Unit
mcd
2)
I
TLMD3100
TLMD3101
TLMD3105
I
I
I
I
20
Luminous intensity
F
V
V
V
V
d
16
10
50
32
mcd
mcd
mcd
nm
nm
deg
V
1)
I
I
I
I
I
I
I
= 10 mA
= 1 mA
Luminous intensity
Luminous intensity
F
F
F
F
F
F
R
2
Dominant wavelength
Peak wavelength
= 10 mA
= 10 mA
= 10 mA
= 20 mA
648
650
60
p
Angle of half intensity
Forward voltage
V
1.8
15
2.2
F
Reverse voltage
= 10
A
V
6
V
R
Junction capacitance
V
= 0, f = 1 MHz
C
15
pF
R
j
1)
in one Packing Unit I
in one Packing Unit I
/I
1.6
2.0
Vmax Vmin
2)
/I
Vmax Vmin
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Document Number 83037
Rev. 1.8, 31-Aug-04
TLMD310.
Vishay Semiconductors
VISHAY
Typical Characteristics (Tamb = 25 C unless otherwise specified)
0°
10°
20°
30°
40°
125
100
1.0
75
0.9
50°
60°
50
25
0.8
0.7
70°
80°
0
0.6
0.6 0.4 0.2
0
0.2
0.4
0
20
40
60
80
100
95 10319
T
amb
- Ambient Temperature ( C )
9510904
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
100
Red
60
50
40
30
20
10
0
10
1
3
1
1.5
2
2.5
0
20
40
60
80
100
V
- Forward Voltage ( V )
F
95 10014
T
amb
- Ambient Temperature ( °C )
95 10905
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 5.
10000
2.0
T
amb
< 60°C
Red
t
/T = 0.005
p
0.01
1.6
1.2
1000
100
0.02
0.05
0.2
0.5
DC
0.8
0.4
0
0.1
10
1
100
0.01
0.1
1
10
0
20
40
60
80
100
t
- Pulse Length ( ms )
T
amb
- Ambient Temperature (°C )
95 9985
95 10015
p
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83037
Rev. 1.8, 31-Aug-04
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TLMD310.
Vishay Semiconductors
VISHAY
2.4
Red
2.0
1.6
1.2
0.8
0.4
I
= 10 mA, const.
FAV
0
I
t
(mA)
/T
10
1
20
0.5
50
100 200
0.1 0.05
500
F
95 10262
0.2
0.02
p
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Red
1
0.1
0.01
0.1
1
10
100
I
- Forward Current ( mA )
95 10016
F
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2
Red
1.0
0.8
0.6
0.4
0.2
0
600
620
640
660
680
700
λ - Wavelength ( nm )
95 10018
Figure 9. Relative Intensity vs. Wavelength
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Document Number 83037
Rev. 1.8, 31-Aug-04
TLMD310.
Vishay Semiconductors
VISHAY
Package Dimensions in mm
3.5 0.2
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
A
C
4
1.6 (1.9)
∅ 2.4
Dimensions: IR and Vaporphase
(Wave Soldering)
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11315
Document Number 83037
Rev. 1.8, 31-Aug-04
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TLMD310.
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
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Document Number 83037
Rev. 1.8, 31-Aug-04
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