TLMO32U1AA-GS18 [VISHAY]

Power SMD LED PLCC-4; 功率SMD LED PLCC- 4
TLMO32U1AA-GS18
型号: TLMO32U1AA-GS18
厂家: VISHAY    VISHAY
描述:

Power SMD LED PLCC-4
功率SMD LED PLCC- 4

可见光LED 光电
文件: 总15页 (文件大小:310K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLM.32.  
Vishay Semiconductors  
Power SMD LED PLCC-4  
FEATURES  
• Available in 8 mm tape  
• Luminous intensity and color categorized  
per packing unit  
e3  
• Luminous intensity ratio per packing unit  
I
/I  
1.6  
Vmax Vmin  
ESD-withstand voltage: up to 2 kV according to  
JESD22-A114-B  
• Suitable for all soldering methods according to  
CECC 00802 and J-STD-020C  
19210  
• Preconditioning: acc. to JEDEC level 2a  
• Lead (Pb)-free device  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
DESCRIPTION  
APPLICATIONS  
The TLM.32. is an advanced development in terms of  
heat dissipation.  
The leadframe profile of this PLCC-4 SMD package is  
optimized to reduce the thermal resistance.  
• Interior and exterior lighting  
• Indicator and backlighting purposes for audio,  
video, LCDs, switches, symbols, illuminated  
advertising etc.  
This allows higher drive current and doubles the light  
output compared to Vishay’s high intensity SMD LED  
in PLCC-2 package.  
• Illumination purpose, alternative to incandescent  
lamps  
• General use  
PRODUCT GROUP AND PACKAGE DATA  
• Product group: LED  
• Package: SMD PLCC-4  
• Product series: power  
• Angle of half intensity: 60°  
PARTS TABLE  
PART  
COLOR, LUMINOUS INTENSITY  
Red, IV = (355 to 900) mcd  
TECHNOLOGY  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
AlInGaP on GaAs  
TLMK32T2V1-GS18  
TLMK32U2AA-GS18  
TLMK32T2AA-GS18  
TLMS32S2U1-GS18  
TLMS32T1U2-GS18  
TLMS32S2V1-GS18  
TLMO32U2AA-GS18  
TLMO32T2V1-GS18  
TLMO32U1AA-GS18  
TLMY32T2V1-GS18  
TLMY32U2AA-GS18  
TLMY32T2AA-GS18  
Red, IV = (560 to 1400) mcd  
Red, IV = (355 to 1400) mcd  
Super red, IV = (224 to 560) mcd  
Super red, IV = (280 to 710) mcd  
Super red, IV = (224 to 900) mcd  
Soft orange, IV = (560 to 1400) mcd  
Soft orange, IV = (355 to 900) mcd  
Soft orange, IV = (450 to 1400) mcd  
Yellow, IV = (355 to 900) mcd  
Yellow, IV = (560 to 1400) mcd  
Yellow, IV = (355 to 1400) mcd  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
1
TLM.32.  
Vishay Semiconductors  
1)  
ABSOLUTE MAXIMUM RATINGS TLMK32., TLMS32., TLMO32., TLMY32.  
PARAMETER  
Reverse voltage 2)  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
V
VR  
5
70  
IF  
Ptot  
Tj  
Forward current  
mA  
mW  
°C  
Power dissipation  
180  
Junction temperature  
Operating temperature range  
Storage temperature range  
125  
Tamb  
Tstg  
- 40 to + 100  
- 40 to + 100  
°C  
°C  
mounted on PC board FR4  
optional paddesign  
RthJA  
RthJA  
290  
270  
K/W  
K/W  
Thermal resistance junction/ambient  
mounted on PC board FR4  
recommended paddesign  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) Driving the LED in reverse direction is suitable for short term application  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS  
TLMK32., RED  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
900  
UNIT  
IV  
TLMK32T2V1  
TLMK32U2AA  
TLMK32T2AA  
355  
560  
355  
mcd  
mcd  
Luminous intensity 2)  
IF = 50 mA  
IV  
IV  
1400  
1400  
mcd  
φV/IV  
λd  
Luminous flux  
3
mlm/mcd  
nm  
IF = 50 mA  
IF = 50 mA  
Dominant wavelength  
Peak wavelength  
TLMK32..  
612  
617  
624  
624  
λp  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
18  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
ϕ
VF  
IR  
60  
2.1  
deg  
V
Forward voltage 3)  
Reverse current  
1.85  
2.55  
10  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) In one packing unit IVmax/IVmin 1.6  
3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of 0.05 V  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS  
TLMS32., SUPER RED  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
224  
280  
224  
TYP.  
MAX.  
560  
UNIT  
mcd  
IV  
TLMS32S2U1  
TLMS32T1U2  
TLMS32S2V1  
Luminous intensity 2)  
IF = 50 mA  
IV  
IV  
710  
mcd  
900  
mcd  
φV/IV  
λd  
Luminous flux  
3
mlm/mcd  
nm  
IF = 50 mA  
IF = 50 mA  
Dominant wavelength  
Peak wavelength  
626  
630  
641  
638  
λp  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
17  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
ϕ
VF  
IR  
60  
2.1  
deg  
V
Forward voltage 3)  
Reverse current  
1.85  
2.55  
10  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) In one packing unit IVmax/IVmin 1.6  
3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of 0.05 V  
www.vishay.com  
2
Document Number 81284  
Rev. 1.0, 22-Feb-08  
TLM.32.  
Vishay Semiconductors  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS  
TLMO32., SOFT ORANGE  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
355  
560  
450  
TYP.  
MAX.  
900  
UNIT  
mcd  
IV  
TLMO32T2V1  
TLMO32U2AA  
TLMO32U1AA  
Luminous intensity 2)  
IF = 50 mA  
IV  
IV  
1400  
1400  
mcd  
mcd  
φV/IV  
λd  
Luminous flux  
3
mlm/mcd  
nm  
IF = 50 mA  
IF = 50 mA  
Dominant wavelength  
Peak wavelength  
600  
605  
611  
609  
λp  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
17  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
ϕ
VF  
IR  
60  
2.1  
deg  
V
Forward voltage 3)  
Reverse current  
1.85  
2.55  
10  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) In one packing unit IVmax/IVmin 1.6  
3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of 0.05 V  
1)  
OPTICAL AND ELECTRICAL CHARACTERISTICS  
TLMY3214, YELLOW  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
355  
560  
355  
TYP.  
MAX.  
900  
UNIT  
mcd  
IV  
TLMY32T2V1  
TLMY32U2AA  
TLMY32T2AA  
Luminous intensity 2)  
IF = 50 mA  
IV  
IV  
1400  
1400  
mcd  
mcd  
φV/IV  
λd  
Luminous flux  
3
mlm/mcd  
nm  
IF = 50 mA  
IF = 50 mA  
Dominant wavelength  
Peak wavelength  
580  
588  
590  
595  
λp  
nm  
Spectral bandwidth  
at 50 % Irel max  
IF = 50 mA  
Δλ  
18  
nm  
IF = 50 mA  
IF = 50 mA  
VR = 5 V  
Angle of half intensity  
ϕ
VF  
IR  
60  
2.1  
deg  
V
Forward voltage 3)  
Reverse current  
1.85  
2.55  
10  
0.01  
µA  
Note:  
1)  
T
= 25 °C, unless otherwise specified  
amb  
2) In one packing unit IVmax/IVmin 1.6  
3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of 0.05 V  
Note:  
LUMINOUS INTENSITY CLASSIFICATION  
Luminous intensity is tested at a current pulse duration of 25 ms and  
an accuracy of 11 %.  
GROUP  
LIGHT INTENSITY (MCD)  
The above type numbers represent the order groups which include  
only a few brightness groups. Only one group will be shipped on  
each reel (there will be no mixing of two groups on each reel). In  
order to ensure availability, single brightness groups will not be  
orderable.  
In a similar manner for colors where wavelength groups are  
measured and binned, single wavelength groups will be shipped on  
any one reel.  
STANDARD  
OPTIONAL  
MIN.  
180  
224  
280  
355  
450  
560  
710  
900  
1120  
MAX.  
224  
1
2
1
2
1
2
1
2
A
S
T
280  
355  
450  
560  
U
710  
In order to ensure availability, single wavelength groups will not be  
orderable.  
900  
V
A
1120  
1400  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
3
TLM.32.  
Vishay Semiconductors  
COLOR CLASSIFICATION  
CROSSING TABLE  
VISHAY  
YELLOW  
SOFT ORANGE  
OSRAM  
GROUP  
DOM. WAVELENGTH (NM)  
TLMK32T2V1  
TLMK32U2AA  
TLMK32T2AA  
TLMS32S2U1  
TLMS32T1U2  
TLMS32S2V1  
TLMO32U2AA  
TLMY32T2V1  
TLMY32U2AA  
TLMY32T2AA  
LAE67BT2V1  
LAE67BU2AA  
LAE67BT2AA  
LSE67AS2U1  
LSE67AT1U2  
LSE67AS2V1  
LOE67BU2AA  
LYE67BT2V1  
LYE67BU2AA  
LYE67BT2AA  
MIN.  
581  
583  
585  
587  
589  
591  
MAX.  
584  
586  
588  
590  
592  
594  
MIN.  
MAX.  
1
2
3
4
5
6
600  
602  
604  
606  
608  
603  
605  
607  
609  
611  
Note:  
Wavelengths are tested at a current pulse duration of 25 ms and an  
accuracy of 1 nm.  
TYPICAL CHARACTERISTICS  
T
= 25 °C, unless otherwise specified  
amb  
100  
90  
100  
90  
yellow  
soft orange  
80  
80  
red  
super red  
70  
70  
270 K/W  
60  
60  
RthJA = 290 K/W  
50  
50  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5  
Tamb - Ambient Temperature (°C)  
18568  
17046  
V
F
- Forward Voltage (V)  
Figure 1. Forward Current vs. Ambient Temperature  
Figure 3. Forward Current vs. Forward Voltage  
0°  
10°  
20°  
1.2  
red  
1.0  
30°  
40°  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.9  
50°  
60°  
0.8  
70°  
0.7  
80°  
0.6  
0.6 0.4 0.2  
0
0.2 0.4  
570  
590  
610  
630  
650  
670  
95 10319  
16007  
λ - Wavelength (nm)  
Figure 2. Rel. Luminous Intensity vs. Angular Displacement  
Figure 4. Relative Intensity vs. Wavelength  
www.vishay.com  
4
Document Number 81284  
Rev. 1.0, 22-Feb-08  
TLM.32.  
Vishay Semiconductors  
250  
200  
150  
100  
50  
10  
red  
red  
50 mA  
1
30 mA  
0
10 mA  
- 50  
- 100  
- 150  
- 200  
0.1  
0.01  
1
10  
100  
- 50 - 25  
0
25  
50  
75  
100  
17037  
IF - Forward Current (mA)  
17034  
Tamb - Ambient Temperature (°C)  
Figure 5. Change of Forward Voltage vs. Ambient Temperature  
Figure 8. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
red  
1.0  
red  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 50 - 25  
0
25  
50  
75  
100  
10 20 30 40 50 60 70 80 90 100  
17035  
Tamb - Ambient Temperature (°C)  
17038  
IF - Forward Current (mA)  
Figure 6. Relative Luminous Intensity vs. Ambient Temperature  
Figure 9. Change of Dominant Wavelength vs. Forward Current  
1.2  
6
1.1  
red  
super red  
1.0  
4
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2
0
- 2  
- 4  
- 6  
600  
620  
640  
660  
680  
700  
- 50 - 25  
0
25  
50  
75  
100  
λ - Wavelength (nm)  
17045  
Tamb - Ambient Temperature (°C)  
17036  
Figure 7. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 10. Relative Intensity vs. Wavelength  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
5
TLM.32.  
Vishay Semiconductors  
10  
1
250  
super red  
200  
super red  
30 mA  
150  
100  
50 mA  
50  
10 mA  
0
0
- 50  
- 100  
- 150  
- 200  
0.01  
1
10  
IF - Forward Current (mA)  
100  
- 50 - 25  
0
25  
50  
75  
100  
17042  
Tamb - Ambient Temperature (°C)  
17039  
Figure 11. Change of Forward Voltage vs. Ambient Temperature  
Figure 14. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
super red  
1.0  
super red  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
10 20 30 40 50 60 70 80 90 100  
- 50 - 25  
0
25  
50  
75  
100  
17040  
T
amb  
- Ambient Temperature (°C)  
I
F
- Forward Current (mA)  
17043  
Figure 12. Relative Luminous Intensity vs. Ambient Temperature  
Figure 15. Change of Dominant Wavelength vs. Forward Current  
1.2  
3
soft orange  
1.0  
2
1
super red  
0.8  
0.6  
0.4  
0.2  
0.0  
0
- 1  
- 2  
- 3  
- 4  
- 5  
- 50 - 25  
0
25  
50  
75  
100  
560  
580  
600  
620  
640  
660  
16314  
T
amb  
- Ambient Temperature (°C)  
λ - Wavelength (nm)  
17041  
Figure 13. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 16. Relative Intensity vs. Wavelength  
www.vishay.com  
6
Document Number 81284  
Rev. 1.0, 22-Feb-08  
TLM.32.  
Vishay Semiconductors  
10  
250  
200  
150  
100  
50  
50 mA  
30 mA  
soft orange  
1
soft orange  
10 mA  
0
0.1  
- 50  
- 100  
- 150  
- 200  
0.01  
1
10  
IF - Forward Current (mA)  
100  
- 50 - 25  
0
25  
50  
75  
100  
17023  
17020  
Tamb - Ambient Temperature (°C)  
Figure 17. Change of Forward Voltage vs. Ambient Temperature  
Figure 20. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
soft orange  
1.0  
soft orange  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 50 - 25  
0
25  
50  
75  
100  
10 20 30 40 50 60 70 80 90 100  
17024  
17021  
Tamb - Ambient Temperature (°C)  
IF - Forward Current (mA)  
Figure 18. Relative Luminous Intensity vs. Ambient Temperature  
Figure 21. Change of Dominant Wavelength vs. Forward Current  
1.2  
6
yellow  
1.0  
soft orange  
4
2
0
0.8  
0.6  
0.4  
0.2  
0.0  
- 2  
- 4  
- 6  
- 50 - 25  
0
25  
50  
75  
100  
540  
560  
580  
600  
620  
640  
16008  
17022  
Tamb - Ambient Temperature (°C)  
λ - Wavelength (nm)  
Figure 19. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 22. Relative Intensity vs. Wavelength  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
7
TLM.32.  
Vishay Semiconductors  
250  
10  
30 mA  
yellow  
200  
50 mA  
150  
yellow  
100  
1
50  
10 mA  
0
- 50  
- 100  
- 150  
- 200  
0.1  
0.01  
- 50 - 25  
0
25  
50  
75  
100  
1
10  
IF - Forward Current (mA)  
100  
Tamb - Ambient Temperature (°C)  
17015  
17018  
Figure 23. Change of Forward Voltage vs. Ambient Temperature  
Figure 26. Relative Luminous Intensity vs. Forward Current  
2.5  
1.5  
yellow  
yellow  
1.0  
2.0  
0.5  
0.0  
1.5  
1.0  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 50 - 25  
0
25  
50  
75  
100  
10 20 30 40 50 60 70 80 90 100  
Tamb - Ambient Temperature (°C)  
17019  
IF - Forward Current (mA)  
17016  
Figure 24. Relative Luminous Intensity vs. Ambient Temperature  
Figure 27. Change of Dominant Wavelength vs. Forward Current  
6
0.12  
0.10  
yellow  
4
2
0
0.08  
tP/T = 0.005  
0.05  
0.5  
0.06  
- 2  
- 4  
- 6  
0.04  
0.02  
0.00  
10-5 10-4 10-3 10-2 10-1 100 101 102  
- 50 - 25  
0
25  
50  
75  
100  
17044  
tP - Pulse Length (s)  
Tamb - Ambient Temperature (°C)  
17017  
Figure 25. Change of Dominant Wavelength vs.  
Ambient Temperature  
Figure 28. Forward Current vs. Pulse Length  
www.vishay.com  
8
Document Number 81284  
Rev. 1.0, 22-Feb-08  
TLM.32.  
Vishay Semiconductors  
TAPING DIMENSIONS in millimeters  
3.5  
3.1  
2.2  
2.0  
Anode  
Cathode  
4.0  
3.6  
5.75  
5.25  
8.3  
7.7  
3.6  
3.4  
Cathode  
1.85  
1.65  
4.1  
3.9  
4.1  
3.9  
1.6  
1.4  
0.25  
2.05  
1.95  
18596  
REEL DIMENSIONS in millimeters  
10.4  
8.4  
120°  
4.5  
3.5  
13.00  
12.75  
2.5  
1.5  
62.5  
60.0  
Identification  
Label:  
Vishay  
Type  
Group  
Tape Code  
Production  
Code  
14.4 max.  
321  
329  
Quantity  
18857  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
9
TLM.32.  
Vishay Semiconductors  
RECOMMENDED PAD DESIGN Dimensions in millimeters  
(Wave-Soldering), R  
= 270 K/W  
thJA  
16260  
RECOMMENDED PAD DESIGN Dimensions in millimeters  
(Reflow-Soldering), R  
= 270 K/W  
thJA  
16261  
www.vishay.com  
10  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
TLM.32.  
Vishay Semiconductors  
OPTIONAL PAD DESIGN Dimensions in millimeters  
(Wave-Soldering), R = 290 K/W  
thJA  
16262  
OPTIONAL PAD DESIGN Dimensions in millimeters  
(Reflow-Soldering), R  
= 290 K/W  
thJA  
16263  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
11  
TLM.32.  
Vishay Semiconductors  
PACKAGE DIMENSIONS in millimeters  
Drawing-No. : 6.541-5054.01-4  
Issue: 2; 02.12.05  
16276_2  
SOLDERING PROFILE  
IR Reflow Soldering Profile for Lead (Pb)-free Soldering  
Preconditioning acc. to JEDEC Level 2a  
948626-1  
lead temperature  
TTW Soldering (acc. to CECC00802)  
300  
250  
300  
250  
200  
150  
100  
50  
5 s  
max. 260 °C  
255 °C  
245 °C  
second  
235 °C to 260 °C  
240 °C  
217 °C  
full line: typical  
dotted line: process limits  
wave  
first wave  
200  
150  
100  
ca. 2 K/s  
max. 30 s  
ca. 200 K/s  
100 °C to 130 °C  
max. 100 s  
max. 120 s  
ca. 5 K/s  
2 K/s  
forced cooling  
50  
0
max. ramp down 6 °C/s  
max. ramp up 3 °C/s  
0
0
100  
Time (s)  
250  
50  
150  
200  
0
50  
100  
150  
200  
250  
300  
Time (s)  
max. 2 cycles allowed  
19885  
Figure 29. Vishay Lead (Pb)-free Reflow Soldering Profile  
(acc. to J-STD-020B)  
Figure 30. Double Wave Soldering of Opto Devices (all Packages)  
www.vishay.com  
12  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
TLM.32.  
Vishay Semiconductors  
LABEL OF FAN FOLD BOX  
EXAMPLE:  
RECOMMENDED METHOD OF STORAGE  
Dry box storage is recommended as soon as the  
aluminum bag has been opened to prevent moisture  
absorption. The following conditions should be  
observed, if dry boxes are not available:  
106  
E
• Storage temperature 10 °C to 30 °C  
• Storage humidity 60 % RH max.  
F
After more than 672 h under these conditions moisture  
content will be too high for reflow soldering.  
37  
TLMK3200-GS18  
8000  
In case of moisture absorption, the devices will recover  
to the former condition by drying under the following  
condition:  
192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH  
(dry air/nitrogen) or  
U2  
A
G
B
D
21063  
C
96 h at 60 °C + 5 °C and < 5 % RH for all device  
containers or  
A) Type of component  
B) PTC = manufacturing plant  
C) SEL - selection code (bin):  
24 h at 100 °C + 5 °C not suitable for reel or tubes.  
An EIA JEDEC standard JESD22-A112 level 2a label  
is included on all dry bags.  
e.g.: U2 = code for luminous intensity group  
D) Batch/date code  
L
E V E L  
E) Total quantity  
F) Company code  
G) Code for lead (Pb)-free classification (e3)  
CAUTION  
This bag contains  
MOISTURE SENSITIVE DEVICES  
2a  
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)  
2. After this bag is opened devices that will be subjected to infrared reflow,  
vapor-phase reflow, or equivalent processing (peak package body temp.  
260°C) must be:  
DRY PACKING  
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or  
b) Stored at <10% RH.  
The reel is packed in an anti-humidity bag to protect  
the devices from absorbing moisture during  
transportation and storage.  
3. Devices require baking before mounting if:  
a)  
b)  
Humidity Indicator Card is >10% when read at 23°C + 5°C or  
2a or 2b is not met.  
4. If baking is required, devices may be baked for:  
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)  
or  
or  
96 hours at 60 5oCand <5%RH  
24 hours at 100 5°C  
For all device containers  
Not suitable for reels or tubes  
Bag Seal Date: ______________________________  
(If blank, see bar code label)  
Aluminum bag  
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113  
19786  
Label  
Example of JESD22-A112 level 2a label  
ESD PRECAUTION  
Proper storage and handling procedures should be  
followed to prevent ESD damage to the devices  
especially when they are removed from the antistatic  
shielding bag. Electro-static sensitive devices warning  
labels are on the packaging.  
Reel  
15973  
VISHAY SEMICONDUCTORS STANDARD  
BAR CODE LABELS  
The Vishay Semiconductors standard bar code labels  
are printed at final packing areas. The labels are on  
each packing unit and contain Vishay Semiconductors  
specific data.  
FINAL PACKING  
The sealed reel is packed into a cardboard box. A  
secondary cardboard box is used for shipping  
purposes.  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
www.vishay.com  
13  
TLM.32.  
Vishay Semiconductors  
OZONE DEPLETING SUBSTANCES POLICY STATEMENT  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA.  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or  
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and  
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such  
unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
14  
Document Number 81284  
Rev. 1.0, 22-Feb-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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