TLMV3100-GS18 [VISHAY]
Visible LED, Transparent;
| 型号： | TLMV3100-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Visible LED, Transparent |
| 文件： | 总7页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLMV3100
Vishay Semiconductors
Bicolor SMD LED PLCC-3
FEATURES
• SMD LED with exceptional brightness
• Multicolored
• Luminous intensity categorized
• Compatible with automatic placement
equipment
e3
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
19140_1
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
/I
≤ 2.0
Vmax Vmin
• Lead (Pb)-free device
DESCRIPTION
APPLICATIONS
These devices have been designed to meet the
increasing demand for surface mounting technology.
• Automotive: backlighting in dashboards and
switches
The package of the TLMV3100 is the PLCC-3
(equivalent to a size B tantalum capacitor).
• Telecommunication: indicator and backlighting in
telephone and fax
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and green chip. So
it is possible to choose the color in one device.
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-3
• Product series: bicolor
• Angle of half intensity: 60°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
Green/Red, IV > 2.5 mcd
TECHNOLOGY
TLMV3100
GaP on GaP / GaAsP on GaP
Document Number 83042
Rev. 1.9, 20-Sep-07
www.vishay.com
1
TLMV3100
Vishay Semiconductors
1)
ABSOLUTE MAXIMUM RATINGS TLMV3100
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage per diode2)
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
IR = 10 μA
VR
6
30
Tamb ≤ 60 °C
tp ≤ 10 µs
IF
IFSM
PV
mA
A
0.5
Tamb ≤ 60 °C
100
mW
°C
Tj
100
Tamb
Tstg
Tsd
Operating temperature range
Storage temperature range
Soldering temperature
- 40 to + 100
- 55 to + 100
260
°C
°C
t ≤ 5 s
°C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
RthJA
400
K/W
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) Driving the LED in reverse direction is suitable for a short term application
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMV3100, RED
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP.
MAX
UNIT
Luminous intensity2)
IF = 10 mA
IV
2.5
6
mcd
nm
nm
deg
V
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
612
625
635
60
IF = 10 mA
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
ϕ
VF
IR
IF = 20 mA
2.4
3
VR = 6 V
10
µA
pF
VR = 0, f = 1 MHz
Cj
15
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one packing unit IVmax/IVmin ≤ 0.5
1)
OPTICAL AND ELECTRICAL CHARACTERISTICS TLMV3100, GREEN
PARAMETER
Luminous intensity2)
TEST CONDITION
SYMBOL
MIN
TYP.
MAX
UNIT
mcd
nm
nm
deg
V
IF = 10 mA
IV
2.5
6
IF = 10 mA
IF = 10 mA
λd
λp
Dominant wavelength
Peak wavelength
562
575
565
60
IF = 10 mA
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
ϕ
VF
IR
IF = 20 mA
2.4
3
VR = 6 V
10
µA
VR = 0, f = 1 MHz
Cj
15
pF
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2) in one packing unit IVmax/IVmin ≤ 0.5
www.vishay.com
2
Document Number 83042
Rev. 1.9, 20-Sep-07
TLMV3100
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
0°
10°
20°
125
100
75
30°
40°
1.0
0.9
50°
60°
50
25
0.8
70°
0.7
80°
0
0
20
amb
40
60
80
100
0.6
0.6 0.4 0.2
0
0.2 0.4
95 10319
T
- Ambient Temperature (°C)
95 10904
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
60
50
100
red
40
30
20
10
0
10
1
0.1
0
20
40
60
80
100
0
1
2
3
4
5
V
- Forward Voltage (V)
95 9989
F
95 10905
Tamb - Ambient Temperature (°C)
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 5. Forward Current vs. Forward Voltage
10000
2.0
Tamb < 60 °C
t p /T = 0.005
red
1.6
0.01
1000
0.02
0.05
1.2
100
0.2
0.5
DC
0.8
0.4
0
0.1
10
1
0
20
40
60
80
100
100
0.01
0.1
1
10
T
amb
- Ambient Temperature (°C)
95 9993
tp - Pulse Length (ms)
95 9985
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83042
Rev. 1.9, 20-Sep-07
www.vishay.com
3
TLMV3100
Vishay Semiconductors
2.4
100
10
green
red
2.0
1.6
1.2
0.8
1
0.4
0
0.1
IF (mA)
tP/T
0
1
2
3
4
5
10
20
50
100 200
0.1 0.05
500
1
0.5
0.2
0.02
95 10321
V
- Forward Voltage (V)
95 9986
F
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 10. Forward Current vs. Forward Voltage
10
2.0
red
green
1.6
1.2
0.8
1
0.1
0.4
0
0.01
1
10
100
0
20
40
60
80
100
I
- Forward Current (mA)
95 9995
F
T
- Ambient Temperature (°C)
95 10320
amb
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
1.2
red
1.0
2.4
green
2.0
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
0
0
I
F (mA)
690
10
1
20
50
100
200
500
590
610
630
650
670
tp/T
0.5
0.2 0.1
0.05
0.02
λ - Wavelength (nm)
95 10040
95 10263
Figure 9. Relative Intensity vs. Wavelength
Figure 12. Specific Luminous Intensity vs. Forward Current
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Document Number 83042
Rev. 1.9, 20-Sep-07
TLMV3100
Vishay Semiconductors
10
1.2
1.0
green
green
1
0.8
0.6
0.4
0.1
0.2
0
0.01
1
10
100
620
520
540
560
580
600
I
- Forward Current (mA)
95 9996
F
λ - Wavelength (nm)
95 10038
Figure 13. Relative Luminous Intensity vs. Forward Current
Figure 14. Relative Intensity vs. Wavelength
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
1.2
area covered with
solder resist
4
1.6 (1.9)
Dimensions: IR and Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5054.01-4
Issue: 2; 02.12.05
16276_1
Document Number 83042
Rev. 1.9, 20-Sep-07
www.vishay.com
5
TLMV3100
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 83042
Rev. 1.9, 20-Sep-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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