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TP0202 [VISHAY]

P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
TP0202
型号： TP0202
厂家： VISHAY    VISHAY
描述：

P-Channel 20-V (D-S) MOSFET
P通道20 -V （D -S ）的MOSFET
文件： 总4页 (文件大小：32K)
中文：  中文翻译
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TP0202T  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
V(BR)DSS Min (V)  
rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
1.4 @ V = –10 V  
–1.3 to – 3 V  
–1.3 to – 3 V  
–0.41  
–0.27  
GS  
–20  
3.5 @ V = –4.5 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D High-Side Switching  
D Ease in Driving Switches  
D Low Offset (Error) Voltage  
D Low-Voltage Operation  
D High-Speed Switching  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low On-Resistance: 0.9 W  
D Low Threshold: –2.1 V  
D Battery Operated Systems  
D Power Supply, Converter Circuits  
D Motor Control  
D Fast Switching Speed: 18 ns  
D Low Input Capacitance: 55 pF  
D Easily Driven Without Buffer  
TO-236  
(SOT-23)  
Marking Code: P3wll  
G
S
1
2
P3 = Part Number Code for TP0202T  
w = Week Code  
ll = Lot Traceability  
3
D
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
–20  
"20  
V
T = 25_C  
A
–0.41  
–0.26  
–0.75  
0.35  
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 70_C  
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
A
Power Dissipation  
P
W
D
T = 70_C  
0.22  
A
Thermal Resistance, Junction-to-Ambient  
R
357  
_C/W  
_C  
thJA  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
J
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
For applications information see AN804.  
Document Number: 70208  
S-04279—Rev. G, 16-Jul-01  
www.vishay.com  
11-1  
TP0202T  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Limits  
Typa  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = –10 mA  
–20  
–25  
(BR)DSS  
GS  
D
V
V
V
= V , I = –0.25 mA  
–1.3  
–2.1  
–3  
"100  
–1  
GS(th)  
DS  
GS D  
I
V
= 0 V, V = "20 V  
nA  
GSS  
DS  
GS  
V
= –16 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
T = 55_C  
= –10 V, V = –10 V  
–10  
J
b
On-State Drain Current  
I
V
–0.5  
–0.75  
1.7  
A
D(on)  
DS  
GS  
V
= –4.5 V, I = –0.05 A  
3.5  
1.4  
GS  
D
b
Drain-Source On-Resistance  
r
W
DS(on)  
V
= –10 V, I = –0.2 A  
0.9  
GS  
D
b
Forward Transconductance  
g
V
= –10 V, I = –0.2 A  
250  
600  
–0.9  
mS  
V
fs  
DS  
D
Diode Forward Voltage  
V
I
S
= –0.25 A, V = 0 V  
–1.5  
SD  
GS  
Dynamic  
Total Gate Charge  
Q
2700  
500  
600  
55  
g
Gate-Source Charge  
Gate-Drain Charge  
Q
Q
V
–16 V, V =–10 V, I ^ –200 mA  
pC  
pF  
gs  
gd  
iss  
DS  
V
GS  
D
Input Capacitance  
C
C
Output Capacitance  
Reverse Transfer Capacitance  
50  
= –15 V, V = 0 V, f = 1 MHz  
oss  
DS  
GS  
C
rss  
18  
Switchingc  
t
8
12  
30  
35  
40  
d(on)  
Turn-On Time  
V
= –15 V, R = 75 W  
L
t
r
20  
20  
30  
DD  
ns  
I
^ –0.2 A, V  
= –10 V  
D
GEN  
t
R
G
= 6 W  
d(off)  
Turn-Off Time  
Notes  
t
f
a. For DESIGN AID ONLY, not subject to production testing.  
VPBP02  
b. Pulse test: PW v300 ms duty cycle v2%.  
c. Switching time is essentially independent of operating temperature.  
Document Number: 70208  
S-04279—Rev. G, 16-Jul-01  
www.vishay.com  
11-2  
TP0202T  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Output Characteristics  
Transfer Characteristics  
–0.8  
–1.0  
–5 V  
T
A
= –55_C  
25_C  
–0.8  
–0.6  
–0.6  
–0.4  
VGS = –10 thru –6 V  
125_C  
–4 V  
–0.4  
–0.2  
–0.2  
–3 V  
0.0  
0.0  
0.0  
–1.5  
–3.0  
–4.5  
–6.0  
0
–1  
–2  
–3  
–4  
VDS – Drain-to-Source Voltage (V)  
VGS – Gate-to-Source Voltage (V)  
On-Resistance vs. Gate-Source Voltage  
On-Resistance vs. Drain Current  
5
4
3
2
1
0
5
4
3
2
1
0
ID = –200 mA  
VGS = –4.5 V  
VGS = –10 V  
I
D
= –50 mA  
0.0  
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
0
–4  
–8  
–12  
–16  
–20  
VGS – Gate-to-Source Voltage (V)  
ID – Drain Current (A)  
Capacitance  
Gate Charge  
180  
160  
140  
120  
100  
80  
–20  
–15  
–10  
–5  
ID = –200 mA  
VGS = –0 V  
f = 1 MHz  
Coss  
VDS = –10 V  
VDS = –16 V  
60  
Ciss  
40  
20  
Crss  
0
0
0
1000  
2000  
3000  
4000  
5000  
6000  
0
–4  
–8  
–12  
–16  
–20  
VDS – Drain-to-Source Voltage (V)  
Qg – Total Gate Charge (nC)  
Document Number: 70208  
S-04279—Rev. G, 16-Jul-01  
www.vishay.com  
11-3  
TP0202T  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)  
A
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
–10.000  
–1.000  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS = –10 V  
ID = –200 mA  
T
A
= 150_C  
V
= –4.5 V  
= –50 mA  
GS  
I
D
–0.100  
T
A
= 25_C  
–0.010  
–0.001  
–50 –25  
0
25  
50  
75  
100 125 150  
0
–0.4  
–0.8 –1.2  
–1.6  
–2.0  
–2.4  
–2.8  
TJ – Junction Temperature (_C)  
VSD – Source-to-Drain Voltage (V)  
Threshold Voltage Variance Over Temperature  
0.50  
0.25  
0.00  
I
D
= –250 mA  
–0.25  
–0.50  
–50 –25  
0
25  
50  
75  
100 125 150  
TJ – Junction Temperature (_C)  
Document Number: 70208  
S-04279—Rev. G, 16-Jul-01  
www.vishay.com  
11-4  

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