TP0610K-T1-GE3 [VISHAY]
TRANSISTOR 185 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal;
| 型号： | TP0610K-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 185 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TP0610K
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
VGS(th) (V)
ID (mA)
Definition
•
•
•
•
•
•
•
•
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
- 60
6 at VGS = - 10 V
- 1 to - 3
- 185
TO-236
(SOT-23)
Marking Code: 6Kwll
Compliant to RoHS Directive 2002/95/EC
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
G
S
1
2
APPLICATIONS
3
D
•
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
•
•
•
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
Top View
Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 60
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
20
TA = 25 °C
- 185
- 115
- 800
350
Continuous Drain Currenta
Pulsed Drain Currentb
ID
TA = 100 °C
mA
IDM
PD
TA = 25 °C
Power Dissipationa
mW
TA = 100 °C
140
Maximum Junction-to-Ambienta
350
°C/W
RthJA
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
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1
TP0610K
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
A
Limits
Typ.a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VDS
VGS = 0 V, ID = - 10 µA
- 60
- 1
V
VGS(th)
VDS = VGS, ID = - 250 µA
- 3
10
V
DS = 0 V, VGS
=
=
20 V
10 V
µA
V
DS = 0 V, VGS
200
500
100
- 25
- 250
Gate-Body Leakage
IGSS
V
DS = 0 V, VGS
=
10 V, TJ = 85 °C
5 V
VDS = 0 V, VGS
=
nA
VDS = - 60 V, VGS = 0 V
DS = - 60 V, VGS = 0 V, TJ = 85 °C
VGS = - 10 V, VDS = - 4.5 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
V
- 50
ID(on)
mA
V
GS = - 10 V, VDS = - 10 V
- 600
VGS = - 4.5 V, ID = - 25 mA
VGS = - 10 V, ID = - 500 mA
10
6
Drain-Source On-Resistancea
RDS(on)
VGS = - 10 V, ID = - 500 mA, TJ =125 °C
9
Forward Transconductancea
Diode Forward Voltage
Dynamic
gfs
VDS = - 10 V, ID = - 100 mA
80
mS
V
VSD
IS = - 200 mA, VGS = 0 V
- 1.4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Qg
Qgs
Qgd
Ciss
Coss
Crss
1.7
0.26
0.46
23
VDS = - 30 V, VGS = - 15 V
nC
pF
ID - 500 mA
VDS = - 25 V, VGS = 0 V
f = 1 MHz
10
5
Turn-On Time
td(on)
td(off)
20
35
VDD = - 25 V, RL = 150
ID - 200 mA, VGEN = - 10 V, Rg = 10
ns
Turn-Off Time
Notes:
a. Pulse test: PW 300 µs duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
1200
900
600
300
0
V
= 10 V
GS
T = - 55 °C
J
7 V
0.8
0.6
0.4
0.2
0.0
8 V
25 °C
125 °C
6 V
5 V
4 V
0
1
2
3
4
5
0
2
4
6
8
10
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
40
32
24
16
8
20
16
12
8
V
= 0 V
GS
V
= 4.5 V
GS
C
iss
V
= 5 V
GS
C
oss
V
= 10 V
GS
4
C
rss
0
0
0
5
10
15
20
25
0
200
400
600
800
1000
I
D
- Drain Current (mA)
V
- Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
15
12
9
1.8
1.5
1.2
0.9
0.6
0.3
0.0
I
D
= 500 mA
V
= 30 V
V
= 10 V at 500 mA
DS
GS
V
= 48 V
DS
V
= 4.5 V at 25 mA
GS
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
- 50 - 25
0
25
T - Junction Temperature (°C)
J
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
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3
TP0610K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1000
V
= 0 V
GS
8
I
D
= 500 mA
100
6
T
J
= 125 °C
4
I
D
= 200 mA
10
1
T
= 25 °C
J
2
T
= - 55 °C
J
0
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.5
0.4
3
2.5
I
D
= 250 µA
0.3
2
0.2
1.5
0.1
- 0.0
- 0.1
- 0.2
- 0.3
1
0.5
0
T
A
= 25 °C
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
- Junction Temperature (°C)
Time (s)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 350 °C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71411.
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4
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
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1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
Document Number: 70739
26-Nov-03
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72609
Revision: 21-Jan-08
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25
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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