TSDF1205RW [VISHAY]
Silicon NPN Planar RF Transistor; 硅NPN平面RF晶体管
| 型号： | TSDF1205RW |
| 厂家： | 
VISHAY |
| 描述： | Silicon NPN Planar RF Transistor |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and
associated gain performance at UHF, VHF and micro-
wave frequencies.
Features
Low power applications
Very low noise figure
High transition frequency f = 12 GHz
T
2
1
1
2
3
13 579
94 9279
94 9278
95 10831
4
3
4
TSDF1205 Marking: F05
Plastic case (SOT 143)
TSDF1205R Marking: 05F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
1
2
13 654
13 566
13 653
13 566
4
3
3
4
TSDF1205W Marking: WF0
Plastic case (SOT 343)
TSDF1205RW Marking: W0F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
9
4
2
12
40
150
Unit
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
V
CBO
V
CEO
V
EBO
V
I
C
mA
mW
C
T
≤ 132 C
P
tot
amb
T
j
T
stg
–65 to +150
C
Document Number 85065
Rev. 5, 30-Jun-00
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Test Conditions
= 12 V, V = 0
Symbol Min Typ Max Unit
V
CE
V
CB
V
EB
I
100
A
BE
CES
= 10 V, I = 0
I
100 nA
E
CBO
= 1 V, I = 0
I
2
A
C
EBO
Collector-emitter breakdown voltage I = 1 mA, I = 0
V
(BR)CEO
4
V
C
B
Collector-emitter saturation voltage I = 5 mA, I = 0.5 mA
V
CEsat
0.1 0.5
V
C
B
DC forward current transfer ratio
V
CE
= 2 V, I = 2 mA
h
FE
50 120 250
C
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol Min
Typ Max Unit
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V = 1 V, f = 1 MHz
Emitter-base capacitance
Noise figure
V
V
= 2 V, I = 5 mA, f = 1 GHz
= 1 V, f = 1 MHz
f
T
12
0.2
0.35
0.15
1.3
GHz
pF
pF
pF
dB
CE
C
C
cb
C
ce
C
eb
CB
CE
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 2 V, I = 2 mA, Z = Z
,
,
F
C
S
Sopt
Z = 50 , f = 2 GHz
L
Power gain
V
CE
= 2 V, I = 2 mA,
G
13
dB
dB
dB
C
pe
pe
f = 2 GHz (@F
)
opt
V
CE
= 2 V, I = 5 mA, Z = Z
G
11.5
12.5
C
S
Sopt
Z = 50 f = 2 GHz
L
2
Transducer gain
V
CE
= 2 V, I = 5 mA, Z = 50
,
S
21e
C
0
f = 2 GHz
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Document Number 85065
Rev. 5, 30-Jun-00
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
100
80
60
40
20
0
0.5
0.4
0.3
0.2
0.1
0
f=1MHz
0
20 40 60 80 100 120 140 160
– Ambient Temperature ( °C )
0
1
2
3
4
5
14284
T
amb
14286
V
CB
– Collector Base Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
16
14
12
10
8
3.0
f=1GHz
V
=2V
CE
f=2GHz
Z =50
S
2.5
2.0
1.5
1.0
0.5
0
V
=3V
CE
V
=2V
CE
6
4
2
0
0
2
4
6
8
10
12
14
0
1
I
2
3
4
5
6
14285
I
– Collector Current ( mA )
14287
– Collector Current ( mA )
C
C
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85065
Rev. 5, 30-Jun-00
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3 (6)
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Dimensions of TSDF1205 in mm
96 12240
Dimensions of TSDF1205R in mm
96 12239
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85065
Rev. 5, 30-Jun-00
4 (6)
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Dimensions of TSDF1205W in mm
96 12237
Dimensions of TSDF1205RW in mm
96 12238
Document Number 85065
Rev. 5, 30-Jun-00
www.vishay.de • FaxBack +1-408-970-5600
5 (6)
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85065
Rev. 5, 30-Jun-00
6 (6)
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