TSDF52830YS [VISHAY]
Dual - MOSMIC- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching; 双 - MOSMIC- 2 AGC放大器，用于电视调谐器预安排，集成带开关的单线开关
| 型号： | TSDF52830YS |
| 厂家： | 
VISHAY |
| 描述： | Dual - MOSMIC- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching |
| 文件： | 总7页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSDF52830YS
Vishay Semiconductors
VISHAY
Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage
with Integrated Band Switch for One-Line Switching
Comments
6
5
4
MOSMIC - MOS Monolithic Integrated Circuit
VY
WN5
CW
Description
The Dual-MOSMIC® TSDF52830YS, assembled in
the well-known SOT-363 plastic package, is a combi-
nation of two different MOSMIC® amplifiers with com-
mon Source and common Gate 2 leads and an
integrated switch. One of the MOSMIC stages is opti-
mized for use in VHF applications, especially regard-
ing cross modulation performance and noise figure at
lower VHF frequencies, whereas the other stage is
1
2
3
19024
Electrostatic sensitive device.
Observe precautions for handling
optimized for use in UHF applications regarding gain
and noise figure performance at higher frequencies of
UHF range. The integrated switch is operated by the
Gate 1 bias of the UHF amplifier on Pin 1. All of the
Gates are protected against excessive input voltage
surges by integrated antiserial diodes between them-
selves and Source.
Typical Application
5
AGC
RFC
C
C
+5 V
G2 (common)
VHF
out
D
4
C
AMP2
G1
6
1
VHF
in
Features
RFC
C
RG1
C
• Two differently optimized amplifiers in a single
package. One of them has a fully internal self-bias-
ing network on chip and the other has a partly inte-
grated bias for easy Gate 1 switch-off with PNP
switching transistors inside PLL -IC
+5 V
V
GG
D
UHF
out
3
AMP1
G1
UHF
in
S (common)
2
19025
V
V
• Internal switch for saving lines on PCB layout as
well as external components
= 5 V: UHF AMP is on; VHF AMP is off
= 0 V: UHF AMP is off; VHF AMP is on
(0 = shorted to Ground or open)
GG
GG
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
resp. 28 mS
Mechanical Data
Case: SOT-363 Plastic case
Weight: approx. 6.0 mg
V - Vishay
Y - Year, is variable for digit from 0 to 9
(e.g. 3 = 2003, 4 = 2004)
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
Applications
CW - Calendar Week, is variable for
number from 01 to 52
Low noise gain controlled VHF and UHF input stages
with 5 V supply voltage, such as in digital and analog
TV tuners and in other multimedia and communica-
tions equipment.
Number of Calendar Week is always indicating
place of pin 1
Pinning:
1 = Gate 1 (UHF amplifier), 2 = Source (common)
3 = Drain (UHF amplifier), 4 = Drain (VHF amplifier),
5 = Gate 2 (common), 6 = Gate1 (VHF amplifier)
Document Number 85178
Rev. 1.1, 26-Aug-04
www.vishay.com
1
TSDF52830YS
Vishay Semiconductors
VISHAY
Parts Table
Part
Marking
Package
TSDF52830YS
WN5
SOT-363
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
Value
8
Unit
V
Drain - source voltage
V
DS
Drain current
I
25
10
mA
mA
D
Gate 1/Gate 2 - source peak
current
I
G1/G2SM
Gate 1/Gate 2 - source voltage
Gate 1 - source voltage
Total power dissipation
+ V
V
6
1.5
V
V
G1
G2SM
- V
G1SM
T
≤ 60 °C
P
200
mW
°C
°C
amb
tot
Ch
stg
Channel temperature
T
150
Storage temperature range
T
- 55 to + 150
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Symbol
Value
8
Unit
V
Drain - source voltage
V
DS
Drain current
I
30
10
mA
mA
D
Gate 1/Gate 2 - source peak
current
I
G1/G2SM
Gate 1/Gate 2 - source voltage
Gate 1 - source voltage
Total power dissipation
+ V
/
V
6
1.5
V
V
G1
G2SM
- V
G1SM
T
≤ 60 °C
P
200
mW
°C
°C
amb
tot
Ch
stg
Channel temperature
T
150
Storage temperature range
T
- 55 to + 150
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
450
Unit
K/W
1)
Channel ambient
R
thChA
1)
3
on glass fibre printed board (25 x 20 x 1.5) mm plated with 35 µm Cu
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2
Document Number 85178
Rev. 1.1, 26-Aug-04
TSDF52830YS
Vishay Semiconductors
VISHAY
Electrical DC Characteristics
T
= 25 °C, unless otherwise specified
amb
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
= 10 µA, V = V
Symbol
Min
15
Typ.
Max
10
Unit
V
Drain - source breakdown
voltage
I
= 0
V
(BR)DSS
D
G2S
G1S
Gate 1 - source breakdown
voltage
+ I
= 10 mA, V
= V = 0 + V
7
7
V
G1S
G2S
DS
(BR)G1SS
I
= 10 mA, V
= V = 0
V
10
20
20
17
V
G2S
G1S
DS
(BR)G2SS
Gate 1 - source leakage current + V
= 5 V, V
= 5 V, V
= V = 0
+ I
nA
nA
mA
G1S
G2S
DS
G1SS
G2SS
Gate 2 - source leakage current
Drain - source operating current
V
= V = 0
I
G2S
G1S
DS
V
= V
= 5 V, V
= 4 V,
I
DSO
8
12
DS
RG1
G2S
R
V
= 100 kΩ
G1
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
= 5 V, V
= 4, I = 20 µA
V
V
0.3
0.3
1.0
1.2
V
V
DS
G2S
D
G1S(OFF)
V
I
= V
= 5 V, R =100 kΩ,
DS
RG1
G1
G2S(OFF)
= 20 µA
D
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Symbol
Min
7
Typ.
Max
10
Unit
V
Gate 1 - source breakdown
voltage
+ I
I
= 10 mA, V
= 10 mA, V
= 5 V, V
= V = 0 + V
DS
G1S
G2S
(BR)G1SS
Gate 2 - source breakdown
voltage
= V = 0
V
7
10
V
G2S
G1S
DS
(BR)G2SS
Gate 1 - source leakage current + V
= V = 0
+ I
50
20
17
µA
nA
G1S
G2S
DS
G1SS
G2SS
Gate 2 - source leakage current
Drain - source operating current
V
= 5 V, V
= V = 0
I
G2S
G1S
DS
V
= V
= 5 V, V
= 4 V,
I
DSP
8
13
mA
DS
RG1
G2S
Gate 1 = nc
Gate 2 - source cut-off voltage
V
I
= V
= 5 V, Gate 1 = nc,
V
G2S(OFF)
0.3
1.2
V
DS
RG1
= 20 µA
D
Document Number 85178
Rev. 1.1, 26-Aug-04
www.vishay.com
3
TSDF52830YS
Vishay Semiconductors
VISHAY
Electrical AC Characteristics
T
= 25 °C, unless otherwise specified
amb
Amplifier 1
V
= V
= 5 V, V
= 4 V, R = 100 kΩ, I = I
f = 1 MHz, T
= 25 °C, unless otherwise specified
amb
DS
RG1
G2S
G1
D
DSO,
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter
Test condition
Symbol
|y
Min
27
Typ.
31
Max
35
Unit
mS
Forward transadmittance
|
21s
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
C
1.7
20
2.1
pF
fF
issg1
C
rss
C
0.9
33
pF
dB
oss
G
= 2 mS, B = B
,
G
G
G
G
S
S
Sopt
ps
ps
ps
ps
G = 0.5 mS, B = B
,
L
L
Lopt
f = 200 MHz
G
= 3.3 mS, B = B
,
30
25
dB
dB
S
S
Sopt
G = 1 mS, B = B
,
L
L
Lopt
f = 400 MHz
G
= 3.3 mS, B = B
S Sopt
,
S
G = 1 mS, B = B
,
L
L
Lopt
f = 800 MHz
AGC range
Noise figure
V
= 5 V, V
= 0.5 to 4 V,
40
50
5.0
1.0
dB
dB
dB
DS
G2S
f = 800 MHz
= G = 20 mS, B = B = 0,
G
F
7.0
1.5
S
L
S
L
f = 50 MHz
G
= 2 mS, G = 0.5 mS,
F
F
S
L
B
= B
, f = 400 MHz
S
Sopt
G
= 3.3 mS, G = 1 mS,
1.3
2.0
dB
S
L
B
= B
, f = 800 MHz
S
Sopt
Cross modulation
Input level for
k = 1 % @ 0 dB
X
X
90
dBµV
mod
AGC f = 50 MHz,
w
f
= 60 MHz
unw
Input level for
100
105
dBµV
mod
k = 1 % @ 40 dB
AGC f = 50 MHz,
w
f
= 60 MHz
unw
Remark on improving intermodulation behavior:
By setting R smaller than 100 kΩ, typical value of I
will raise and improved intermodulation behavior will be performed.
G1
DSO
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4
Document Number 85178
Rev. 1.1, 26-Aug-04
TSDF52830YS
Vishay Semiconductors
VISHAY
Amplifier 2
V
= V
= 5 V, V
= 4 V, Gate 1 = nc, I = I
f = 1 MHz, T
= 25 °C, unless otherwise specified
DS
RG1
G2S
D
DSP,
amb
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter
Test condition
Symbol
|y
Min
23
Typ.
28
Max
33
Unit
mS
Forward transadmittance
|
21s
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
C
2.2
20
2.7
pF
fF
issg1
C
rss
C
1.0
32
pF
dB
oss
G
= 2 mS, B = B
,
G
S
S
Sopt
ps
ps
ps
ps
G = 0.5 mS, B = B
,
L
L
Lopt
f = 200 MHz
G
= 2 mS, B = B ,
Sopt
G
28
22
dB
dB
S
S
G = 1 mS, B = B
,
L
L
Lopt
f = 400 MHz
G
= 3.3 mS, B = B ,
Sopt
G
G
S
S
G = 1 mS, B = B
,
L
L
Lopt
f = 800 MHz
AGC range
Noise figure
V
= 5 V, V
= 0.5 to 4 V,
50
4.5
1.0
dB
dB
dB
DS
G2S
f = 200 MHz
= G = 20 mS, B = B = 0,
G
F
6.0
1.6
S
L
S
L
f = 50 MHz
G
= 2 mS, G = 1 mS,
F
F
S
L
B
= B
, f = 400 MHz
Sopt
S
G
= 3.3 mS, G = 1 mS,
1.5
2.3
dB
S
L
B
= B
, f = 800 MHz
Sopt
S
Cross modulation
Input level for
k = 1 % @ 0 dB
X
X
90
dBµV
mod
AGC f = 50 MHz,
w
f
= 60 MHz
unw
Input level for
105
dBµV
mod
k = 1 % @ 40 dB
AGC f = 50 MHz,
w
f
= 60 MHz
unw
Document Number 85178
Rev. 1.1, 26-Aug-04
www.vishay.com
5
TSDF52830YS
Vishay Semiconductors
VISHAY
Package Dimensions in mm (Inches)
0.25 (0.010)
0.10 (0.004)
1.00 (0.039)
0.80 (0.031)
0.10 (0.004)
10
Mounting Pad Layout
2.20 (0.087)
1.80 (0.071)
0.35 (0.014)
0.30 (0.012)
0.20 (0.009)
0.65 (0.026) Ref.
0.65 (0.026)
1.3 (0.052)
14280
1.30 (0.052) Ref.
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6
Document Number 85178
Rev. 1.1, 26-Aug-04
TSDF52830YS
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85178
Rev. 1.1, 26-Aug-04
www.vishay.com
7
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