TSFF5410-MSZ [VISHAY]
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| 型号： | TSFF5410-MSZ |
| 厂家： | 
VISHAY |
| 描述： | 暂无描述 半导体 红外LED 光电 二极管 |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSFF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 22ꢀ
94 8390
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
DESCRIPTION
• Compliant to RoHS directive 2002/95/EC and in
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
accordance to WEEE 2002/96/EC
double hetero (DH) technology with high radiant power and
• Halogen-free according to IEC 61249-2-21 definition
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSFF5410
70
22
870
15
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSFF5410
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
100
V
mA
mA
A
Forward current
Peak forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
200
Surge forward current
Power dissipation
1
180
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
Thermal resistance junction/ambient
Note
amb = 25 ꢀC, unless otherwise specified
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
T
Document Number: 81091
Rev. 1.7, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1
TSFF5410
High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
Vishay Semiconductors
120
100
80
60
40
20
0
200
180
160
140
120
100
80
60
40
20
0
RthJA = 230 K/W
RthJA = 230 K/W
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21143
21142
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.5
MAX.
1.8
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
Forward voltage
2.3
3.0
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
125
70
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
45
135
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
700
50
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
TKφe
ϕ
- 0.35
22
IF = 100 mA
IF = 100 mA
λp
870
40
Δλ
TKλp
tr
nm
IF = 100 mA
0.25
15
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
15
ns
Cut-off frequency
Virtual source diameter
I
DC = 70 mA, IAC = 30 mA pp
fc
24
MHz
mm
d
2.1
Note
amb = 25 ꢀC, unless otherwise specified
T
www.vishay.com
2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81091
Rev. 1.7, 29-Jun-09
TSFF5410
High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
1.25
Tamb < 50 ꢀC
tP/T = 0.01
0.02
1000
1.0
0.05
0.1
0.75
0.5
0.25
0
0.2
0.5
100
0.01
0.1
1
10
100
980
780
880
tP - Pulse Duration (ms)
16031
95 9886
λ - Wavelength (nm)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0ꢀ
10ꢀ
20ꢀ
1000
100
30ꢀ
40ꢀ
1.0
0.9
50ꢀ
60ꢀ
tP = 100 µs
tP/T = 0.001
0.8
10
70ꢀ
0.7
80ꢀ
1
0.6
0.4
0
0.2
94 8883
0
1
2
3
4
VF - Forward Voltage (V)
18873
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1
0
1000
100
10
- 1
- 2
- 3
1
IFDC = 70 mA
- 4
- 5
IFAC = 30 mA pp
0.1
101
102
f - Frequency (kHz)
103
104
105
1
10
100
1000
18220
IF - Forward Current (mA)
14256
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Attenuation vs. Frequency
Document Number: 81091
Rev. 1.7, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
3
TSFF5410
High Speed Infrared Emitting Diode,
870 nm, GaAlAs Double Hetero
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
A
R2.49 (sphere)
Area not plane
1.1 0.25
Ø 5 0.15
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
- 0.05
0.5
2.54 nom.
6.544-5258.06-4
Issue: 3; 19.05.09
95 11260
www.vishay.com
4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81091
Rev. 1.7, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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