TSHA4400-ASZ [VISHAY]

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TSHA4400-ASZ
型号: TSHA4400-ASZ
厂家: VISHAY    VISHAY
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半导体 红外LED 光电 二极管
文件: 总5页 (文件大小:86K)
中文:  中文翻译
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TSHA440.  
Vishay Telefunken  
GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)  
Package  
94 8398  
Description  
The TSHA44..series are high efficiency infrared emit-  
ting diodes in GaAlAs on GaAlAs technology, molded  
in a clear, untinted plastic package.  
In comparison with the standard GaAs on GaAs  
technology these high intensity emitters feature about  
50 % radiant power improvement.  
Features  
Extra high radiant power  
High radiant intensity for long transmission dis-  
tance  
Suitable for high pulse current operation  
Standard T–1(ø 3 mm) package for low space  
application  
Angle of half intensity ϕ = ± 20  
Peak wavelength = 875 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control and free air transmission systems with high power requirements in combination with PIN  
photodiodes or phototransistors.  
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also  
suitable for systems with panes in the transmission range between emitter and detector.  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
2
180  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
450  
thJA  
Document Number 81017  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  
TSHA440.  
Vishay Telefunken  
Basic Characteristics  
T
amb  
= 25 C  
Parameter  
Forward Voltage  
Test Conditions  
I = 100 mA, t = 20 ms  
Symbol Min  
Typ  
1.5  
3.2  
Max  
1.8  
4.9  
Unit  
V
V
V
F
V
F
F
p
I = 1.5 A, t = 100 s  
F
p
Temp. Coefficient of V  
Reverse Current  
I = 100mA  
V = 5 V  
R
TK  
VF  
–1.6  
mV/K  
A
F
F
I
R
100  
Junction Capacitance  
V = 0 V, f = 1 MHz, E = 0  
I = 100 mA  
F
C
TK  
ϕ
20  
–0.7  
±20  
875  
80  
pF  
R
j
Temp. Coefficient of  
Angle of Half Intensity  
Peak Wavelength  
Spectral Bandwidth  
Temp. Coefficient of  
Rise Time  
%/K  
deg  
nm  
nm  
nm/K  
ns  
ns  
ns  
ns  
e
e
p
I = 100 mA  
F
p
I = 100 mA  
F
I = 100 mA  
TK  
0.2  
p
F
I = 100 mA  
t
t
600  
300  
600  
300  
F
r
I = 1.5 A  
F
r
Fall Time  
I = 100 mA  
t
t
F
f
I = 1.5 A  
F
f
Type Dedicated Characteristics  
T
amb  
= 25 C  
Parameter  
Radiant Intensity  
Test Conditions  
I =100mA, t =20ms  
Type  
Symbol  
Min  
12  
16  
140  
190  
Typ  
20  
30  
240  
360  
20  
Max  
Unit  
mW/sr  
mW/sr  
mW/sr  
mW/sr  
mW  
TSHA4400  
TSHA4401  
TSHA4400  
TSHA4401  
TSHA4400  
TSHA4401  
I
e
I
e
I
e
I
e
F
p
I =1.5A, t =100 s  
F
p
Radiant Power  
I =100mA, t =20ms  
F
p
e
24  
mW  
e
Typical Characteristics (Tamb = 25 C unless otherwise specified)  
250  
125  
200  
100  
150  
100  
50  
75  
50  
25  
0
R
thJA  
0
100  
100  
0
20  
40  
60  
80  
0
20  
40  
60  
80  
12789  
T
amb  
– Ambient Temperature ( °C )  
94 7941 e  
T
amb  
– Ambient Temperature ( °C )  
Figure 1. Power Dissipation vs. Ambient Temperature  
Figure 2. Forward Current vs. Ambient Temperature  
www.vishay.de FaxBack +1-408-970-5600  
2 (5)  
Document Number 81017  
Rev. 2, 20-May-99  
TSHA440.  
Vishay Telefunken  
1
1000  
100  
10  
10  
TSHA 4401  
t /T=0.01, I = 2 A  
p
FM  
0.02  
0
TSHA 4400  
0.05  
0.1  
10  
1
0.2  
0.5  
–1  
10  
–2  
–1  
0
1
2
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
I – Forward Current ( mA )  
F
10  
10  
94 7947 e  
t – Pulse Duration ( ms )  
p
94 7942 e  
Figure 3. Pulse Forward Current vs. Pulse Duration  
Figure 6. Radiant Intensity vs. Forward Current  
4
10  
1000  
t = 100  
t /T = 0.001  
p
s
p
100  
10  
1
3
2
1
10  
10  
0.1  
10  
4
0
1
2
3
0
1
2
3
4
10  
10  
10  
I – Forward Current ( mA )  
F
10  
10  
94 8005 e  
V
– Forward Voltage ( V )  
94 7943 e  
F
Figure 4. Forward Current vs. Forward Voltage  
Figure 7. Radiant Power vs. Forward Current  
1.2  
1.6  
1.1  
1.2  
I
F
= 10 mA  
I
= 20 mA  
F
1.0  
0.9  
0.8  
0.7  
0.8  
0.4  
0
100  
140  
0
20  
40  
60  
80  
–10 0 10  
50  
100  
94 7990 e  
T
amb  
– Ambient Temperature ( °C )  
94 8020 e  
T
amb  
– Ambient Temperature ( °C )  
Figure 5. Relative Forward Voltage vs.  
Ambient Temperature  
Figure 8. Rel. Radiant Intensity\Power vs.  
Ambient Temperature  
Document Number 81017  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (5)  
TSHA440.  
Vishay Telefunken  
0°  
10  
°
20  
°
1.25  
1.0  
30°  
40°  
1.0  
0.9  
0.75  
0.5  
50°  
60°  
0.8  
0.7  
0.25  
70°  
80°  
I
= 100 mA  
F
(
)
=
(
)/  
(
)
p
e
rel  
e
e
0
780  
980  
0.6  
880  
– Wavelength ( nm )  
0.6  
0.4  
0.2  
0
0.2  
0.4  
94 8000 e  
94 7944 e  
Figure 9. Relative Radiant Power vs. Wavelength  
Figure 10. Relative Radiant Intensity vs.  
Angular Displacement  
Dimensions in mm  
95 10951  
www.vishay.de FaxBack +1-408-970-5600  
4 (5)  
Document Number 81017  
Rev. 2, 20-May-99  
TSHA440.  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as their  
impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 81017  
Rev. 2, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
5 (5)  

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