TSHA4400-ASZ [VISHAY]
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VISHAY 
TSHA440.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)
Package
94 8398
Description
The TSHA44..series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
50 % radiant power improvement.
Features
Extra high radiant power
High radiant intensity for long transmission dis-
tance
Suitable for high pulse current operation
Standard T–1(ø 3 mm) package for low space
application
Angle of half intensity ϕ = ± 20
Peak wavelength = 875 nm
p
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power requirements in combination with PIN
photodiodes or phototransistors.
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Test Conditions
Symbol
Value
5
Unit
V
V
R
Forward Current
I
100
200
2
180
mA
mA
A
mW
C
C
C
C
K/W
F
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t /T = 0.5, t = 100 s
t = 100 s
p
I
FM
p
p
I
FSM
P
T
V
100
j
T
–55...+100
–55...+100
260
amb
T
stg
t
5sec, 2 mm from case
T
sd
R
450
thJA
Document Number 81017
Rev. 2, 20-May-99
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TSHA440.
Vishay Telefunken
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I = 100 mA, t = 20 ms
Symbol Min
Typ
1.5
3.2
Max
1.8
4.9
Unit
V
V
V
F
V
F
F
p
I = 1.5 A, t = 100 s
F
p
Temp. Coefficient of V
Reverse Current
I = 100mA
V = 5 V
R
TK
VF
–1.6
mV/K
A
F
F
I
R
100
Junction Capacitance
V = 0 V, f = 1 MHz, E = 0
I = 100 mA
F
C
TK
ϕ
20
–0.7
±20
875
80
pF
R
j
Temp. Coefficient of
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
Rise Time
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
e
e
p
I = 100 mA
F
p
I = 100 mA
F
I = 100 mA
TK
0.2
p
F
I = 100 mA
t
t
600
300
600
300
F
r
I = 1.5 A
F
r
Fall Time
I = 100 mA
t
t
F
f
I = 1.5 A
F
f
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Radiant Intensity
Test Conditions
I =100mA, t =20ms
Type
Symbol
Min
12
16
140
190
Typ
20
30
240
360
20
Max
Unit
mW/sr
mW/sr
mW/sr
mW/sr
mW
TSHA4400
TSHA4401
TSHA4400
TSHA4401
TSHA4400
TSHA4401
I
e
I
e
I
e
I
e
F
p
I =1.5A, t =100 s
F
p
Radiant Power
I =100mA, t =20ms
F
p
e
24
mW
e
Typical Characteristics (Tamb = 25 C unless otherwise specified)
250
125
200
100
150
100
50
75
50
25
0
R
thJA
0
100
100
0
20
40
60
80
0
20
40
60
80
12789
T
amb
– Ambient Temperature ( °C )
94 7941 e
T
amb
– Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81017
Rev. 2, 20-May-99
TSHA440.
Vishay Telefunken
1
1000
100
10
10
TSHA 4401
t /T=0.01, I = 2 A
p
FM
0.02
0
TSHA 4400
0.05
0.1
10
1
0.2
0.5
–1
10
–2
–1
0
1
2
0
1
2
3
4
10
10
10
10
10
10
10
10
I – Forward Current ( mA )
F
10
10
94 7947 e
t – Pulse Duration ( ms )
p
94 7942 e
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
4
10
1000
t = 100
t /T = 0.001
p
s
p
100
10
1
3
2
1
10
10
0.1
10
4
0
1
2
3
0
1
2
3
4
10
10
10
I – Forward Current ( mA )
F
10
10
94 8005 e
V
– Forward Voltage ( V )
94 7943 e
F
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
I
F
= 10 mA
I
= 20 mA
F
1.0
0.9
0.8
0.7
0.8
0.4
0
100
140
0
20
40
60
80
–10 0 10
50
100
94 7990 e
T
amb
– Ambient Temperature ( °C )
94 8020 e
T
amb
– Ambient Temperature ( °C )
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81017
Rev. 2, 20-May-99
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TSHA440.
Vishay Telefunken
0°
10
°
20
°
1.25
1.0
30°
40°
1.0
0.9
0.75
0.5
50°
60°
0.8
0.7
0.25
70°
80°
I
= 100 mA
F
(
)
=
(
)/
(
)
p
e
rel
e
e
0
780
980
0.6
880
– Wavelength ( nm )
0.6
0.4
0.2
0
0.2
0.4
94 8000 e
94 7944 e
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Dimensions in mm
95 10951
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Document Number 81017
Rev. 2, 20-May-99
TSHA440.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81017
Rev. 2, 20-May-99
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