TSHA6500-ES12 [VISHAY]
Infrared LED, 875nm;
| 型号： | TSHA6500-ES12 |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, 875nm 半导体 |
| 文件： | 总6页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = 2ꢀ4
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
9ꢀ 8389
• Halogen-free according to IEC 612ꢀ9-2-21 definition
DESCRIPTION
APPLICATIONS
The TSHA650. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA6500
TSHA6501
TSHA6502
TSHA6503
Ie (mW/sr)
ϕ (deg)
2ꢀ
λ
P (nm)
875
tr (ns)
600
20
25
30
35
2ꢀ
875
600
2ꢀ
875
600
2ꢀ
875
600
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSHA6500
Bulk
Bulk
Bulk
Bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
T-1¾
T-1¾
T-1¾
T-1¾
TSHA6501
TSHA6502
TSHA6503
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
100
V
mA
mA
A
Forward current
Peak forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
200
Surge forward current
Power dissipation
2.5
180
mW
4C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- ꢀ0 to + 85
- ꢀ0 to + 100
260
4C
4C
t ≤ 5 s, 2 mm from case
4C
Thermal resistance junction/ambient
Note
amb = 25 4C, unless otherwise specified
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
T
Document Number: 81022
Rev. 1.9, 25-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, 875 nm,
Vishay Semiconductors
GaAlAs
200
180
160
1ꢀ0
120
100
80
120
100
80
60
ꢀ0
20
0
RthJA = 230 K/W
RthJA = 230 K/W
60
ꢀ0
20
0
0
10 20 30 ꢀ0 50 60 70 80 90 100
Tamb - Ambient Temperature (4C)
0
10 20 30 ꢀ0 50 60 70 80 90 100
Tamb - Ambient Temperature (4C)
211ꢀ3
211ꢀ2
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.5
MAX.
UNIT
V
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 100 mA
VF
TKVF
IR
1.8
Temperature coefficient of VF
Reverse current
- 1.6
mV/K
µA
V
R = 5 V
100
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
V
R = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Cj
20
- 0.7
2ꢀ
pF
TKφe
ϕ
%/K
deg
nm
nm
nm/K
ns
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1 A
λp
875
80
Spectral bandwidth
Δλ
TKλp
tr
Temperature coefficient of λp
0.2
600
300
600
300
2.2
Rise time
tr
ns
IF = 100 mA
IF = 1 A
tf
ns
Fall time
tf
ns
Virtual source diameter
d
mm
Note
amb = 25 4C, unless otherwise specified
T
www.vishay.com
2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81022
Rev. 1.9, 25-Jun-09
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, 875 nm,
Vishay Semiconductors
GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
2.8
2.8
2.8
2.8
20
MAX.
3.5
3.5
3.5
3.5
60
UNIT
V
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
TSHA6500
TSHA6501
TSHA6502
TSHA6503
VF
VF
VF
VF
Ie
V
Forward voltage
IF = 1 A, tp = 100 µs
V
V
12
16
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
Ie
25
60
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
Ie
20
30
60
Ie
2ꢀ
35
60
Radiant intensity
Ie
100
130
160
200
160
200
2ꢀ0
280
22
Ie
Ie
Ie
φe
φe
φe
φe
23
mW
Radiant power
IF = 100 mA, tp = 20 ms
2ꢀ
mW
25
mW
Note
amb = 25 4C, unless otherwise specified
T
BASIC CHARACTERISTICS
Tamb = 25 4C, unless otherwise specified
10ꢀ
101
tp = 100 µs
tp/T= 0.001
IFSM = 2.5 A (single pause)
103
102
t /T=0.01
p
100
0.05
0.1
0.2
0.5
10-1
10-2
101
0
1
2
3
ꢀ
10-1
100
101
102
tp - Pulse Duration (ms)
9ꢀ 8003
VF - Forward Voltage (V)
9ꢀ 8005
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. ꢀ - Forward Current vs. Forward Voltage
Document Number: 81022
Rev. 1.9, 25-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
3
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, 875 nm,
Vishay Semiconductors
GaAlAs
1.2
1.1
1.6
1.2
IF = 10 mA
IF = 20 mA
1.0
0.9
0.8
0.7
0.8
0.ꢀ
0
1ꢀ0
0
20
ꢀ0
60
80
100
- 10 0 10
50
100
Tamb - Ambient Temperature (4C)
9ꢀ 7990
Tamb - Ambient Temperature (4C)
9ꢀ 8020
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
1.25
1.0
TSHA 6503
TSHA 6502
100
0.75
0.5
TSHA 6501
10
0.25
TSHA 6500
IF = 100 mA
(
)
=
(
) /
(
)
λ
p
Φ
λ
Φ
λ
Φ
e
rel
e
e
1
0
780
980
100
101
IF - Forward Current (mA)
102
103
10ꢀ
880
λ - Wavelenght (nm)
9ꢀ 87ꢀ6
9ꢀ 8000
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
04
104
204
1000
100
10
304
ꢀ04
1.0
0.9
504
604
0.8
1
704
0.7
804
0.1
0.6
0.6 0.ꢀ 0.2
0
0.2
0.ꢀ
100
101
102
103
10ꢀ
IF - Forward Current (mA)
9ꢀ 8015 e
9ꢀ 8016 e
Fig. 7 - Radiant Power vs. Forward Current
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
www.vishay.com
ꢀ
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81022
Rev. 1.9, 25-Jun-09
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, 875 nm,
Vishay Semiconductors
GaAlAs
PACKAGE DIMENSIONS in millimeters
C
A
R2.ꢀ9 (sphere)
Area not plane
Ø 5 0.15
+ 0.2
- 0.1
0.6
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
- 0.05
0.5
2.5ꢀ nom.
6.5ꢀꢀ-5259.08-ꢀ
Issue: 3; 19.05.09
1ꢀꢀ36
Document Number: 81022
Rev. 1.9, 25-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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