TSOP31136 [VISHAY]
IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统
| 型号： | TSOP31136 |
| 厂家： | 
VISHAY |
| 描述： | IR Receiver Modules for Remote Control Systems |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New TSOP311../TSOP313..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP31#.. series are miniaturized receivers for
infrared remote control systems. A PIN diode and a
preamplifier are assembled on a lead frame, the
epoxy package acts as an IR filter.
The demodulated output signal can be directly
decoded by a microprocessor. The TSOP311.. is
compatible with all common IR ... remote control data
formats. The TSOP313.. is optimized to better
suppress spurious pulses from energy saving
fluorescent lamps but will also suppress some data
signals.
1
2
94 8691
3
Mechanical Data
Pinning:
This component has not been qualified according to
automotive specifications.
1 = GND, 2 = V , 3 = OUT
S
Product Matrix
Features
Standard applications
Very noisy enviroments
TSOP313..
• Very low supply current
• Photo detector and preamplifier in one
package
TSOP311..
e3
• Internal filter for PCM frequency
• Improved shielding against EMI
• Supply voltage: 2.5 V to 5.5 V
Parts Table
Part
TSOP31#30
TSOP31#33
TSOP31#36
TSOP31#38
TSOP31#40
TSOP31#56
Carrier Frequency
30 kHz
33 kHz
36 kHz
38 kHz
40 kHz
56 kHz
• Improved immunity against ambient light
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Insensitive to supply voltage ripple and noise
Block Diagram
Application Circuit
16831
19267
2
IR Transmitter
with
TSALxxxx
TSOP....
VS
VS
25 kΩ
3
OUT
OUT
µC
Band Demo-
Input
AGC
Circuit
dulator
Pass
VO
1
GND
GND
PIN
Control
Circuit
No external components are required
Document Number 81763
Rev. 1.0, 09-Aug-07
www.vishay.com
1
New TSOP311../TSOP313..
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VS
Value
- 0.3 to + 6.0
3
Unit
V
Supply voltage
Supply current
(Pin 2)
(Pin 2)
IS
mA
- 0.3 to
(VS + 0.3)
VO
Output voltage
(Pin 3)
(Pin 3)
V
IO
Tj
Output current
5
100
mA
°C
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
10
°C
°C
(Tamb ≤ 85 °C)
mW
°C
Soldering temperature
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Min
Typ.
0.35
0.45
Max
0.45
Unit
mA
mA
V
Ev = 0, VS = 3.3 V
ISD
ISH
VS
0.27
Supply current (Pin 2)
Supply voltage
Ev = 40 klx, sunlight
2.5
5.5
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
Transmission distance
Output voltage low (Pin 3)
Minimum irradiance
d
45
m
I
F = 250 mA
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
100
mV
Pulse width tolerance:
t
pi - 5/fo < tpo < tpi + 6/fo,
Ee min
0.15
45
0.35
mW/m2
test signal see fig. 1
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
W/m2
deg
Ee max
Maximum irradiance
Directivity
30
Angle of half transmission
distance
ϕ1/2
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
0.4
0.35
0.3
Optical Test Signal
E
e
(IR diode TSAL6200, IF = 0.4 A, N = 6 pulses,
f = f0,T = 10 ms)
t
0.25
0.2
Output Pulse Width
Input Burst Length
t
*)
pi
T
*) t
6/f is recommended for optimal function
0.15
0.1
pi
o
Output Signal
14337
V
V
O
1 )
3/f < t < 9/f
0
0
d
0.05
0
λ = 950 nm,
optical test signal, fig. 1
2 )
t
pi
- 4/f < t < t + 6/f
0
po
pi
0
OH
OL
0.1
1
10
100
1000 10000 100000
V
1 )
2 )
t
t
d
t
po
20771
Ee - Irradiance (mW/m²)
Figure 1. Output Active Low
Figure 2. Pulse Length and Sensitivity in Dark Ambient
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2
Document Number 81763
Rev. 1.0, 09-Aug-07
New TSOP311../TSOP313..
Vishay Semiconductors
Optical Test Signal
4
E
e
Correlation with ambient light sources:
10 W/m² = 1.4 kLx (Std. illum. A, T = 2855 K)
10 W/m² = 8.2 kLx (Daylight, T = 5900 K)
3.5
3
t
Wavelength of ambient
600 µs
600 µs
2.5
2
λ
illumination: = 950 nm
T = 60 ms
Output Signal, (see fig. 4)
1.5
1
94 8134
V
O
V
OH
OL
0.5
V
0
0.01
t
T
on
T
off
0.1
1
10
100
Ee - Ambient DC Irradiance (W/m²)
20757
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
Ton
f = 100 Hz
f = 10 kHz
f = 20 kHz
f = 30 kHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Toff
f = f
o
λ = 950 nm,
optical test signal, fig. 3
0.1
1
10
100
1000
10000
1
10
100
1000
20759
Ee - Irradiance (mW/m²)
20753
VsRMS - AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
1.2
500
450
400
350
300
250
200
150
100
50
1.0
0.8
0.6
0.4
0.2
f = f
f (3 dB) = f0/10
5 ꢀ
0
0.0
0
0
500
1000 1500 2000 2500 3000
0.7
0.9
1.1
1.3
20747
f - EMI Frequency (MHz)
16925
f/f - Relative Frequency
0
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 81763
Rev. 1.0, 09-Aug-07
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3
New TSOP311../TSOP313..
Vishay Semiconductors
0°
10°
20°
1
0.9
0.8
0.7
0.6
30°
40°
1.0
0.9
0.8
TSOP311..
0.5
50°
60°
0.4
0.3
TSOP313..
0.2
70°
0.7
80°
0.1
f = 38 kHz, Ee = 2 mW/m²
0
0.6 0.4 0.2
0
0.2
0.4 0.6
0
20
40
60
80
100
120
d
- Relative Transmission Distance
19258
rel
20814
Burst Length (number of cycles/burst)
Figure 9. Max. Envelope Duty Cycle vs. Burst Length
Figure 12. Horizontal Directivity
0°
10°
20°
0.3
0.25
0.2
30°
40°
1.0
0.9
0.8
0.15
0.1
50°
60°
70°
0.7
0.05
0
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
- 30
- 10
10
30
50
70
90
d
- Relative Transmission Distance
19259
rel
Tamb - Ambient Temperature (°C)
20755
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity
0.2
0.18
0.16
0.14
0.12
0.1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.08
0.06
0.04
0.02
0
2
3
4
5
6
2.5
3.5
4.5
5.5
750
850
950
1050
1150
20756
Vs - Supply Voltage (V)
16919
λ - Wavelength (nm)
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 14. Sensitivity vs. Supply Voltage
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Document Number 81763
Rev. 1.0, 09-Aug-07
4
New TSOP311../TSOP313..
Vishay Semiconductors
Suitable Data Format
The TSOP31#.. series is designed to suppress
spurious output pulses due to noise or disturbance
signals. Data and disturbance signals can be
distinguished by the devices according to carrier
frequency, burst length and envelope duty cycle. The
data signal should be close to the band-pass center
frequency (e.g. 38 kHz) and fulfill the conditions in the
table below.
When a data signal is applied to the TSOP31#.. in the
presence of a disturbance signal, the sensitivity of the
receiver is reduced to insure that no spurious pulses
are present at the output. Some examples of
disturbance signals which are suppressed are:
IR Signal from fluorescent
lamp with low modulation
5
0
10
15
20
16920
Time (ms)
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signals at any frequency
Figure 15. IR Signal from Fluorescent Lamp
with low Modulation
• Modulated noise from fluorescent lamps with
electronic ballasts
IR Signal from fluorescent
lamp with high modulation
0
10
10
15
20
16921
Time (ms)
Figure 16. IR Signal from Fluorescent Lamp
with high Modulation
TSOP311..
TSOP313..
Minimum burst length
6 cycles/burst
6 cycles/burst
After each burst of length
A gap time is required of
6 to 70 cycles
10 cycles
6 to 35 cycles
10 cycles
For bursts greater than
70 cycles
35 cycles
A gap time in the data stream is needed of
> 1.2 x burst length
> 6 x burst length
Maximum continuous short bursts/second
Compatible to NEC code
2000
yes
yes
yes
yes
yes
yes
2000
yes
Compatible to RC5/RC6 code
Compatible to Sony code
yes
no
Compatible to RCMM code
Compatible to r-step code
yes
yes
Compatible to XMP code
yes
Common disturbance signals are
Even critical disturbance signals are
Suppression of interference from fluorescent lamps
supressed (Example: Signal pattern of suppressed (Examples: Signal pattern
fig. 15) of fig. 15 and fig. 16)
For data formats with long bursts (more than 10 carrier cycles) please see the data sheet for TSOP312../TSOP314..
Document Number 81763
Rev. 1.0, 09-Aug-07
www.vishay.com
5
New TSOP311../TSOP313..
Vishay Semiconductors
Package Dimensions in millimeters
96 12116
www.vishay.com
6
Document Number 81763
Rev. 1.0, 09-Aug-07
New TSOP311../TSOP313..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81763
Rev. 1.0, 09-Aug-07
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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