TSSF4500_08 [VISHAY]
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero; 高速红外发光二极管，符合RoHS ， 890纳米， GaAlAs的双异质
| 型号： | TSSF4500_08 |
| 厂家： | 
VISHAY |
| 描述： | High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSSF4500
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 4.5 x 4 x 4.8
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 22°
94 8688
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 12 MHz
DESCRIPTION
TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
•
Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
•
TSSF4500 is ideal for the design of transmission systems
according to IrDA requirements and for carrier frequency
based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz)
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
TSSF4500
20
22
890
30
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSSF4500
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
Forward current
VR
IF
100
200
1.5
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
160
mW
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240
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81040
Rev. 1.6, 04-Sep-08
TSSF4500
High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Tj
VALUE
100
UNIT
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
°C
°C
t ≤ 5 s, 2 mm from case
Tsd
°C
Thermal resistance junction/ambient
Leads not soldered
RthJA
450
K/W
Note
Tamb = 25 °C, unless otherwise specified
250
200
150
125
100
75
RthJA
RthJA
100
50
0
50
25
0
0
0
20
40
60
80
100
20
40
60
80
100
94 8029
94 7916
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.35
2.4
MAX.
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
1.6
Forward voltage
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
50
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
160
20
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 100 mA
Ie
10
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
200
35
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
TKφe
ϕ
- 0.7
22
IF = 100 mA
IF = 100 mA
λp
890
40
Δλ
TKλp
tr
nm
IF = 100 mA
0.2
30
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
30
ns
Cut-off frequency
Virtual source diameter
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
mm
d
2.1
Note
amb = 25 °C, unless otherwise specified
T
Document Number: 81040
Rev. 1.6, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
241
TSSF4500
High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
0°
10°
20°
104
103
102
30°
40°
1.0
0.9
50°
60°
0.8
101
100
70°
0.7
80°
0.6
0.4
0
0.2
94 8883
0
1
2
3
4
94 8880
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
1000
100
10
tp = 0.1 ms
1
0.1
1
10
100
1000
21440
IF - Forward Current (mA)
Fig. 4 - Radiant Intensity vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
1000
800
900
20082
λ - Wavelength (nm)
Fig. 5 - Relative Radiant Power vs. Wavelength
www.vishay.com
242
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81040
Rev. 1.6, 04-Sep-08
TSSF4500
High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
0.15
0.15
4
0.15
4.5
1.7
Area not plane
0.15
0.6
C
A
0.45 + 0.2
0.4 + 0.15
- 0.1
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5253.01-4
Issue:1; 01.07.96
96 12206
Document Number: 81040
Rev. 1.6, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
243
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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