TSUS5200 [VISHAY]
Infrared Emitting Diode, 950 nm, GaAs; 红外发光二极管， 950纳米，砷化镓
| 型号： | TSUS5200 |
| 厂家： | 
VISHAY |
| 描述： | Infrared Emitting Diode, 950 nm, GaAs |
| 文件： | 总7页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSUS520.
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Description
TSUS520. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and pho-
totransistors.
94 8389
Features
Applications
• Low cost emitter
• Infrared remote control and free air transmission
systems with low forward voltage and low cost
requirements in combination with PIN photodiodes
or phototransistors.
• Low forward voltage
• High radiant power and radiant intensity
e2
• Suitable for DC and high pulse current
operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = 15°
• Peak wavelength λ = 950 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage
Test condition
Symbol
VR
Value
5
Unit
V
Forward current
IF
IFM
IFSM
PV
150
300
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
2.5
210
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- 55 to + 100
- 55 to + 100
260
°C
°C
t ≤ 5 sec, 2 mm from case
°C
Thermal resistance junction/
ambient
RthJA
375
K/W
Document Number 81055
Rev. 2.0, 23-Feb-07
www.vishay.com
1
TSUS520.
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VF
Min
Typ.
1.3
Max
1.7
Unit
V
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 100 mA
Temp. coefficient of VF
Reverse current
TKVF
IR
- 1.3
mV/K
µA
V
V
R = 5 V
100
Junction capacitance
R = 0 V, f = 1 MHz, E = 0
Cj
30
pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
%/K
Temp. coefficient of φe
IF = 20 mA
TKφe
- 0.8
Angle of half intensity
Peak wavelength
ϕ
15
deg
nm
IF = 100 mA
λp
950
Spectral bandwidth
Temp. coefficient of λp
Rise time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
Δλ
50
nm
nm/K
ns
TKλp
0.2
tr
tr
800
400
800
400
3.8
ns
Fall time
IF = 100 mA
IF = 1.5 A
tf
ns
tf
ns
Virtual source diameter
∅
mm
Type Dedicated Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
Part
Symbol
VF
Min
Typ.
2.2
Max
Unit
V
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
TSUS5200
3.4
3.4
2.7
50
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
TSUS5200
TSUS5201
TSUS5202
VF
VF
Ie
2.2
2.2
20
V
V
Radiant intensity
10
15
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
Ie
25
50
Ie
20
30
50
Ie
95
180
230
280
13
Ie
120
170
Ie
Radiant power
φe
φe
φe
14
mW
15
mW
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2
Document Number 81055
Rev. 2.0, 23-Feb-07
TSUS520.
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
104
103
102
101
100
10-1
250
200
150
RthJA
100
50
0
0
20
40
60
80
100
0
1
2
3
4
Tamb - Ambient Temperature (°C)
VF - Forward Voltage (V)
94 7957
94 7996
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
250
200
1.2
1.1
IF = 10 mA
150
100
1.0
0.9
0.8
0.7
R
thJA
50
0
100
0
20
40
60
80
100
0
20
40
60
80
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
94 7988
94 7990
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1
10
1000
I
= 2.5 A ( Single Pulse )
FSM
TSUS 5202
100
t /T = 0.01
p
0
10
0.05
0.1
TSUS5200
10
0.5
1.0
TSUS 5201
1
-1
10
-2
-1
0
1
2
0
1
2
3
4
10
10
10
10
10
10
10
10
10
10
tp - Pulse Duration (ms)
94 7989
I
- Forward Current (mA)
94 7991
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81055
Rev. 2.0, 23-Feb-07
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3
TSUS520.
Vishay Semiconductors
°
10
°
20
0°
1000
30°
40°
TSUS 5202
100
10
1
1.0
0.9
TSUS5200
50°
60°
0.8
70°
0.7
80°
0.1
0.6
0
1
2
3
4
0.6 0.4 0.2
0
0.2
0.4
10
10
10
10
10
I
- Forward Current (mA)
94 7992
94 7995
F
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Intensity vs. Angular Displacement
1.6
1.2
IF = 20 mA
0.8
0.4
0
140
- 10 0 10
50
100
Tamb - Ambient Temperature (°C)
94 7993
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
1000
950
λ
- Wavelength (nm)
94 7994
Figure 9. Relative Radiant Power vs. Wavelength
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Document Number 81055
Rev. 2.0, 23-Feb-07
4
TSUS520.
Vishay Semiconductors
Package Dimensions in mm
95 10916
Document Number 81055
Rev. 2.0, 23-Feb-07
www.vishay.com
5
TSUS520.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 81055
Rev. 2.0, 23-Feb-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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